MMBD914L High-Speed Switching Diode Features * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS Rating Reverse Voltage Forward Current Non-Repetitive Peak Forward Surge Current t = 1 sec t = 1 sec Peak Forward Surge Current Symbol Value Unit VR 100 V IF 200 mA IFSM A 1.0 2.0 IFM(surge) 500 mA Symbol Max Unit PD 225 mW SOT-23 CASE 318 STYLE 8 3 CATHODE 1 ANODE MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 5D MG G 1 1.8 mW/C RJA 556 C/W PD 300 mW (Note: Microdot may be in either location) 2.4 mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. RJA 417 C/W ORDERING INFORMATION TJ, Tstg -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5D M G = Device Code = Date Code* = Pb-Free Package Package Shipping MMBD914LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SMMBD914LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel MMBD914LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel SMMBD914LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 1994 January, 2019 - Rev. 10 1 Publication Order Number: MMBD914LT1/D MMBD914L ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 - Vdc - - 25 5.0 nAdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT - 4.0 pF Forward Voltage (IF = 10 mAdc) VF - 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr - 4.0 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. FR- 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 820 +10 V 2.0 k 100 H tr 0.1 F IF tp t IF trr 10% t 0.1 F 90% DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE iR(REC) = 1.0 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 MMBD914L 100 10 I R , REVERSE CURRENT ( A) TA = 85C TA = -40C 10 TA = 25C 1.0 TA = 125C 1.0 TA = 85C 0.1 TA = 55C 0.01 TA = 25C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) TA = 150C 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 3 8.0 40 50 MMBD914L PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AS D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 0.25 3 E 1 2 T HE DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0 INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 --- MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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