2N4221A
N−Channel Silicon JFET
General Purpose Amp, Switch
TO72 Type Package
Description:
The 2N4221A is an N−Channel junction silicon field−effect transistor in a TO72 type package
designed for general purpose amplifier and switching applications.
Absolute Maximum Ratings:
Drain−Source Voltage, VDS 30V..........................................................
Drain−Gate Voltage, VDG 30V............................................................
Gate−Source Voltage, VGS −30V.........................................................
Drain Current, ID15mA.................................................................
Total Device Dissipation (TA = +25C), PD300mW.........................................
Derate Above 25C 2mW/C.......................................................
Operating Junction Temperature, TJ+175C...............................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate−Source Breakdown Voltage V(BR)GSS VDS = 0, IG = −10A−30 − − V
Gate Reverse Current IGSS VGS= −15V, VDS = 0 − − −0.1 nA
VGS= −15V, VDS = 0, TA = +150C− − −100 nA
Gate−Source Cutoff Voltage VGS(off) VDS = 15V, ID = 0.1nA − − −6 V
Gate−Source Voltage VGS VDS = 15V, ID = 200A−1.0 − −5.0 V
ON Characteristics
Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 2.0 −6.0 mA
Static Drain−Source On Resistance rDS(on) VDS = 0, VGS = 0 −400 −
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Small−Signal Characteristics
Forward Transfer Admittance
Common Source
|yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 2000 −5000 mhos
Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz − − 20 mhos
Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz −4.5 6.0 pF
Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz −1.2 2.0 pF
Common−Source Output
Capacitance
Cosp VDS = 15V, VGS = 0, f = 30MHz −1.5 −pF
Functional Characteristics
Noise Figure NF VDS = 15V, VGS = 0, RS = 1M, f =
100Hz
− − 2.5 dB
Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%.
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
.040 (1.02)
.018 (0.45) Dia
45
Drain
Source
Gate
Case
.190
(4.82)
.500
(12.7)
Min G
D
S
