All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFB193404F
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 1 of 14 Rev. 05.1, 2011-05-13
15
20
25
30
35
40
-
45
-40
-35
-30
-25
-20
E
fficiency (%)
A
CPR (dBc)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Efficiency
IMD Low
0
5
10
15
-60
-55
-50
-
45
36 38 40 42 44 46 48 50 52
Drain
E
IMD,
A
Average Output Power (dBm)
IMD Up
ACPR
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in
multi-standard cellular power amplifi er applications in the 1930 to 1990
MHz frequency band. Features include input and output matching, high
gain and thermally-enhanced package with earless fl ange. Manufactured
with Infi neon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
RF Characteristics
Single-carrier WCDMA Measurements (tested in Infi neon test fi xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ = 1990 MHz,
3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10.0 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 17.5 19 — dB
Drain Efficiency ηD 29 33 — %
Adjacent Channel Power Ratio ACPR — –34.5 –32.5 dBc
Features
• Broadband internal matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 100 W
- Effi ciency = 33%
- Gain = 19 dB
- PAR = 7.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
• Increased negative gate-source voltage range
for improved performance in Doherty amplifi ers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
PTFB193404F
Package H-37275-6/2
Data Sheet – DRAFT ONLY 2 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-carrier WCDMA Characteristics (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 80 W average, ƒ1 = 1980 MHz, ƒ2 = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8.0 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 19 — dB
Drain Efficiency ηD — 29 — %
Intermodulation Distortion IMD — –33 — dBc
Two-tone Characteristics (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture)
VDD = 30 V, IDQ = 2.6 A, POUT = 265 W PEP, ƒ = 1990 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 19 — dB
Drain Efficiency ηD — 36 — %
Intermodulation Distortion IMD — 30 — dBc
DC Characteristics (both sides)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
V
DS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω
Operating Gate Voltage VDS = 30 V, IDQ = 2.6 A VGS 2.3 2.8 3.3 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RθJC
0.2 °C/W
Data Sheet – DRAFT ONLY 3 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
-45
-40
-35
-30
-25
D (dBc)
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
IM3 Low
IM3 Up
-60
-55
-50
36 38 40 42 44 46 48 50 52
IM
Average Output Power (dBm)
1990
1960
1930
Typical Performance (data taken in production test fi xture)
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB193404F V1 H-37275-6/2 Ceramic open-cavity, earless push-pull Tray
PTFB193404F V1 R250 H-37275-6/2 Ceramic open-cavity, earless push-pull Tape & reel, 250 pcs
15
20
25
30
35
40
18
19
20
f
iciency (%)
G
ain (dB )
Two-carrier WCDMA 3GPP Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
Gain
Efficienc
y
0
5
10
15
16
17
36 38 40 42 44 46 48 50 52
Ef
f
G
Average Output Power (dBm)
Data Sheet – DRAFT ONLY 4 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
-20
-10
0
40
50
60
Two-tone Broadband Performa nce
VDD = 30 V, IDQ = 2.6 A, POUT = 52 dBm
Efficiency
Return Loss
IMD3
o
ss (dB) / IMD (dBc)
B
) / Efficiency (%)
-50
-40
-
10
20
1840 1900 1960 2020 2080
Frequency (M Hz)
Gain
IMD3
Return L
o
Gain (d
B
21
28
35
42
17
18
19
20
ency (%)
ain (dB)
Two-tone Drive-up
VDD = 30 V, IDQ = 2.6 A,
ƒ1= 1989 MHz, ƒ2= 1990 MHz
Gain
7
14
21
15
16
17
40 44 48 52 56
Effici
G
Output Power, PEP (dBm)
Efficiency 20
30
40
50
18
19
20
21
c
iency ( %)
G
ain (dB)
Two-tone Drive-up (over tempe rature)
(POUT-max 3rd order IMD @ –30 dBc)
VDD = 30 V, IDQ = 2.6 A,
ƒ1= 1959 MHz, ƒ2= 19 60 MHz
Gain
0
10
16
17
39 41 43 45 47 49 51 53 55 57
Effi
G
Output Power, PEP (dBm)
+25C
+85C
–30C
Efficiency
20
25
30
35
40
45
-45
-35
-25
c
iency (%)
IMD (dBc)
Two-tone Drive-up
VDD = 30 V, IDQ = 2.6 A,,
ƒ1= 1989 MHz, ƒ2= 1990 MH z
3rd Order IMD Efficiency
0
5
10
15
-65
-55
39 44 49 54
Effi
c
Output Powe r, PEP. (dBm)
Data Sheet – DRAFT ONLY 5 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
-45
-35
-25
-15
M
D (dBc)
Inter modulation Distortion
vs. Output Power
VDD = 30 V, IDQ = 2.6 A,
ƒ1= 1989 MHz, ƒ2= 1990 MHz
3rd Order
7th
5th
-75
-65
-55
39 41 43 45 47 49 51 53 55 57
I
M
Output Power, PEP (dBm)
-40
-30
-20
-10
M
D (dBc)
Intermodulation Distortion
vs. Tone Spa c in g
VDD = 30 V, IDQ = 2.6 A,
ƒ = 1930 MHz, POUT = 317 W (PEP)
IMD7
IMD5
IMD3
-70
-60
-50
1 10 100
I
M
Two Tone Spacing (MHz)
IMD7
IMD Lower
IMD Upper
15
20
25
30
35
40
-40
-30
-20
E
fficiency (%)
Single-carrier WCDM A Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
n
nel Power Ratio (dB)
Efficiency
ACPR Up
0
5
10
15
-60
-50
36 38 40 42 44 46 48 50 52
Drain
E
Aver age O utput Pow er (dB m)
Adjacent Cha
n
ACPR Up
ACPR Low
-50
-40
-30
-20
d
Order (dBc)
Two-tone Drive-up
at Selected Frequencies
VDD = 30 V, IDQ = 2.6 A, tone spacing = 1 MHz
-70
-60
39 41 43 45 47 49 51 53 55 57
IMD 3r
d
Output Power, PEP (dBm)
1990 M Hz
1960 M Hz
1930 M Hz
Data Sheet – DRAFT ONLY 6 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
-10
10
30
50
10
14
18
22
26
y
(%) / ACP (dBc)
B
) / PARC Gain (dB)
Single-carrier W CDM A Drive-u p
VDD = 30 V, IDQ = 2.6 A, ƒ = 1930 MHz,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 M Hz
PARC
@
.01% CCDF
Efficienc
y
Gain
-70
-50
-30
-2
2
6
36 38 40 42 44 46 48 50 52 54
Efficienc
y
PARC (d
B
Aver age O utput Pow er (dB m)
ACP
-10
10
30
50
14
18
22
26
(
%) / ACP (dBc)
Single-carrier WCDM A Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal,
PAR = 7.5 dB, BW = 3.84 MHz
PARC @ 01% CCDF
Efficiency
Gain
/ PARC Gain (dB)
-70
-50
-30
2
6
10
36 38 40 42 44 46 48 50 52 54
Efficiency
(
Aver age O utput Power (dB m)
ACP
PARC @ .01% CCDF
PARC (dB)
-10
10
30
50
14
18
22
26
y
(%) / ACP (dBc)
/ PARC Gain (dB)
Single-carrier WCDM A Drive-up
VDD = 30 V, IDQ = 2.6 A, ƒ = 1960 MHz,
3GPP WCDM A signal,
PAR = 7.5 dB, BW = 3.84 MH z
PARC @ .01% CCDF
Efficiency
Gain
-70
-50
-30
2
6
10
36 38 40 42 44 46 48 50 52 54
Efficienc
y
PARC (dB)
Average Output Power (dBm)
ACP
PARC @ .01% CCDF
-20
-10
0
15
25
35
s
s (dB) / ACP (dBc)
d
B) / Efficiency (%)
Single-carrier W CDM A Broadband
VDD = 30 V, IDQ = 2.6 A, POUT = 125 W,
3GPP WCDMA signal
Efficienc
y
Gain
IRL
-40
-30
-5
5
1840 1900 1960 2020 2080
Return Lo
s
Gain, PARC (
d
Frequen cy (M Hz)
ACP
PARC @ .01% CCDF
Data Sheet – DRAFT ONLY 7 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance (measurements taken on full part, both sides)
G
D
GS
D
PP-F ET compl ete_12-16- 2010
Z LoadZ Source
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
1900 1.21 –3.60 0.73 –2.08
1930 1.21 –3.53 0.72 –2.01
1960 1.20 –3.47 0.72 –1.94
1990 1.20 –3.41 0.72 –1.87
2020 1.19 –3.35 0.72 –1.81
See next page for circuit information
Data Sheet – DRAFT ONLY 8 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit
1
2
3
TL101
TL102
TL103 TL104 TL105
R802
1300 Ohm
R803
10 Ohm
R804
1200 Ohm C803
1000 pF
TL106
TL107
TL108
TL109
TL110
TL111 TL112 TL113 TL114 TL115
C101
1000000 pF
TL116
TL117 TL118 TL119
S
C
B
E
1
2
3
4
S2
12
3
S1 C801
1000000 pF
C802
10000000 pF
C102
1000000 pF R103
10 Ohm
L101
22 nH
L102
22 nH R104
10 Ohm
C103
10000000 pF
C104
10000000 pF
C105
18 pF
C106
18 pF
C107
1.5 pF
C804
10000000 pF
TL120
12
3
TL121
1
2
3
4
TL122
TL123
12
3
TL124
R801
100 Ohm
PORT
1
1
2
34
5
6
78
S3
RF_IN
b 1 93 4 0 4F - v 1 _ B D o ut _1 2 - 1 6 -2 0 10
Gate DUT
(Pin G1)
Gate DUT
(Pin G2)
Reference circuit input schematic for ƒ = 1990 MHz
ε= 3.48
H = 20 mil
RO/RO4350B1
r
Data Sheet – DRAFT ONLY 9 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
ε= 3.48
H = 20 mil
RO/RO4350B1
r
Reference circuit output schematic for ƒ = 1990 MHz
Reference Circuit Assembly
DUT PTFB193404F
Test Fixture Part No. LTN/PTFB193404EF
PCB Rogers RO4350, 0.508 mm [0.020”] thick, 1 oz. copper, εr = 3.48
Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower
Transmission Electrical
Dimensions: W, L (mm) Dimensions: W, L (mils)
Line Characteristics
Input
TL101 0.017 λ, 47.12 Ω W1 = 1.270, W2 = 1.270, W3 = 1.524 W1 = 50, W2 = 50, W3 = 60
TL102 0.039 λ, 47.12 Ω W = 1.270, L = 3.553 W = 50, L = 140
TL103 0.023 λ, 47.12 Ω W = 1.270, L = 2.055 W = 50, L = 81
TL104 0.013 λ, 47.12 Ω W = 1.270, L = 1.168 W = 50, L = 46
TL105 0.122 λ, 7.29 Ω W = 12.700, L = 10.160 W = 500, L = 400
TL106 W1 = 0.010, W2 = 1.168, Offset = 5.893 W1 = 10, W2 = 46, Offset = 232
TL107 W1 = 0.010, W2 = 1.168, Offset = –5.893 W1 = 10, W2 = 46, Offset = –232
TL108 0.007 λ, 34.08 Ω W = 2.032, L = 0.635 W = 80, L = 25
TL109 0.012 λ, 34.08 Ω W1 = 2.032, W2 = 1.034 W1 = 80, W2 = 41
TL110 0.055 λ, 53.60 Ω W = 1.034, L = 5.029 W = 41, L = 198
TL111 0.023 λ, 47.12 Ω W = 1.270, L = 2.111 W = 50, L = 83
TL112 0.017 λ, 47.12 Ω W = 1.270, L = 1.524 W = 50, L = 60
TL113 0.023 λ, 47.12 Ω W = 1.270, L = 2.055 W = 50, L = 81
table continued on next page
Reference Circuit (cont.)
TL201
TL202
C201
0.8 pF
12
3
TL203 TL204
TL205
TL206
TL207 TL208
TL209
TL210
TL211
TL212
DCVS
V2
DCVS
V1
12
3
TL213
12
3
TL214
12
3
TL215
12
3
TL216
12
3
TL217 TL218
TL219
C202
100000000 pF
TL220
C203
100000000 pF
12
3
TL221
12
3
TL222
12
3
TL223
12
3
TL224
12
3
TL225 TL226
TL227
PORT
1
C204
18 pF
C205
18 pF
C206
4700000 pF
C207
4700000 pF
C208
4700000 pF
C209
4700000 pF
C210
10000000 pF
C211
10000000 pF
C212
10000000 pF
C213
10000000 pF
b193404F-v1_BD out_12- 16-2010
RF_OUT
V
DD
V
DD
Drain DUT
(Pin D1)
Drain DUT
(Pin D2)
Drain V
DD
(Pin V1)
Drain V
DD
(Pin V2)
Data Sheet – DRAFT ONLY 10 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
Transmission Electrical
Dimensions: W, L (mm) Dimensions: W, L (mils)
Line Characteristics
Input (cont.)
TL114 0.013 λ, 47.12 Ω W = 1.270, L = 1.168 W = 50, L = 46
TL115 0.122 λ, 7.29 Ω W = 12.700, L = 10.160 W = 500, L = 400
TL116 0.068 λ, 47.12 Ω W = 1.270, L = 6.170 W = 50, L = 243
TL117 0.032 λ, 47.12 Ω W = 1.270, L = 2.875 W = 50, L = 113
TL118 0.024 λ, 47.12 Ω W = 1.270, L = 2.131 W = 50, L = 84
TL119 0.017 λ, 47.12 Ω W = 1.270, L = 1.524 W = 50, L = 60
TL120 0.084 λ, 53.60 Ω W = 1.034, L = 7.671 W = 41, L = 302
TL121 0.014 λ, 53.60 Ω W1 = 1.034, W2 = 1.034, W3 = 1.27 W1 = 41, W2 = 41, W3 = 50
TL122 0.014 λ, 47.12 Ω W1 = 1.270, W2 = 1.270, W3 = 1.270, W1 = 50, W2 = 50, W3 = 50,
W4 = 1.270 W4 = 50
TL123 0.032 λ, 47.12 Ω W = 1.270, L = 2.896 W = 50, L = 114
TL124 0.014 λ, 47.12 Ω W1 = 1.270, W2 = 1.270, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50
Output
TL201 W1 = 1.577, W2 = 1.046 W1 = 62, W2 = 41
TL202 W1 = 2.263, W2 = 1.577 W1 = 89, W2 = 62
TL203 0.009 λ, 31.48 Ω W1 = 2.263, W2 = 2.263, W3 = 0.762 W1 = 89, W2 = 89, W3 = 30
TL204 0.139 λ, 31.48 Ω W = 2.263, L = 12.299 W = 89, L = 484
TL205 W1 = 0.001, W2 = 13.335, Offset = –6.223 W1 = 1, W2 = 525, Offset = –245
TL206 W1 = 3.048, W2 = 2.263 W1 = 120, W2 = 89
TL207 0.009 λ, 25.04 Ω W = 3.048, L = 0.762 W = 120, L = 30
TL208 0.266 λ, 40.78 Ω W = 1.577, L = 23.889 W = 62, L = 941
TL209 0.160 λ, 6.97 Ω W = 13.335, L = 13.335 W = 525, L = 525
TL210 0.160 λ, 6.97 Ω W = 13.335, L = 13.335 W = 525, L = 525
TL211 0.151 λ, 53.21 Ω W = 1.046, L = 13.774 W = 41, L = 542
TL212 0.120 λ, 31.48 Ω W = 2.263, L = 10.617 W = 89, L = 418
TL213 0.024 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80
TL214 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL215 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL216 0.024 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80
TL217 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL218 0.116 λ, 19.85 Ω W = 4.064, L = 10.008 W = 160, L = 394
TL219 0.052 λ, 19.85 Ω W = 4.064, L = 4.470 W = 160, L = 176
TL220 0.116 λ, 19.85 Ω W = 4.064, L = 10.008 W = 160, L = 394
TL221 0.024 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80
TL222 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL223 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL224 0.026 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.286 W1 = 160, W2 = 160, W3 = 90
TL225 0.024 λ, 19.85 Ω W1 = 4.064, W2 = 4.064, W3 = 2.032 W1 = 160, W2 = 160, W3 = 80
TL226 0.052 λ, 19.85 Ω W = 4.064, L = 4.470 W = 160, L = 176
TL227 W1 = 0.001, W2 = 13.335, Offset = 6.223 W1 = 1, W2 = 525, Offset = 245
Data Sheet – DRAFT ONLY 11 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Reference circuit assembly diagram (not to scale)
Component ID Description Suggested Manufacturer P/N
C101, C102 Chip capacitor, 1 µF ATC NFM18PS105R0J30
C103, C104 Capacitor, 10 µF Digi-Key 490-4393-2-ND
C105, C106, Capacitor, 18 pF ATC 800A180JT
C204, C205
C107 Capacitor, 1.5 pF ATC 800A1R5BT
C801 Capacitor, 1 µF Digi-Key 490-4736-2-ND
C802, C804 Capacitor, 10 µF Digi-Key 587-1818-2-ND
C803 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND
L101, L102 Inductor, 22 nH Digi-Key 0805W220JT
R101, R102 Resistor, 1000 Ω Digi-Key P1.0KECT-ND
R103, R104 Resistor, 10 Ω Digi-Key P10GTR-ND
R801 Resistor, 100 Ω Digi-Key P100GTR-ND
R802 Resistor, 1300 Ω Digi-Key P1.3KGTR-ND
R803 Resistor, 10 Ω Digi-Key P101GTR-ND
R804 Resistor, 1200 Ω Digi-Key P1.2KGTR-ND
S1 Potentiometer Digi-Key 3224W-202ECT-ND
S2 Transistor Digi-Key BCP56-ND, BCP56
S3 Voltage regulator Digi-Key LM780L05ACM-ND, 7805
C201 Capacitor, 0.8 pF ATC 800A0R8BT
C202, C203 Capacitor, 100 µF Digi-Key PCE4442TR-ND
C206, C207, Capacitor, 4.7 µF Digi-Key 490-1864-2-ND
C208, C209
C210, C211, Capacitor, 10 µF Digi-Key 587-1818-2-ND
C212, C213
b193404f-v1_CD_12-16-2010
C209
RF_OUTRF_IN
C207
C210
C203
C202
C212 C208
C102
C101
C211
C201
C204
R104
R802
C105
C801
C104
C206
C106
C107
R803
C803
C103
C205
L102
C104
R801
R103
C802
R804
S2
.020
V
DD
V
DD
S3
PTFB193404_IN_01 PTFB193404_OUT_01
+
S1
C213
L101
.020 (60)RO4350,
.020 (63)
V
DD
RO4350,
Reference Circuit (cont.)
Data Sheet – DRAFT ONLY 12 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Pinout Diagram
Package H-37275-6/2
Pin Description
V1 VDD device 1
V2 VDD device 2
D1 Drain device 1
D2 Drain device 2
G1 Gate device 1
G2 Gate device 2
S Source (fl ange)
See next page for package outline specifi cations
V2
S =
G1 G2
D1 D2
V1
H-37275 -6-2_pd _07- 22- 2010
Data Sheet – DRAFT ONLY 13 of 14 Rev. 05.1, 2011-05-13
PTFB193404F
Confidential, Limited Internal Distribution
Package Outline Specifi cations
Package H-37275-6/2
Diagram Notes—unless otherwise specifi ed:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specifi ed otherwise.
4. Pins: D1, D2 - drain, devices 1 & 2; G1, G2 - gate, devices 1 & 2;
V1, V2 - VDD, devices 1 & 2; S - source (fl ange).
5. Lead thickness: 0.127 ±0.051 [.005 ±.002].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infi neon Internet page
http://www.infi neon.com/rfpower
V1
G1 G2
D2D1 V2
32.258
[1.270]
1.626
[0.064]
10.160
[.400]
4X 11.684
[.460]
2X 45° X 1.19
[45° X .047]
2X 1.143
[.045]
16.612±.500
[.654±.020]
9.398
[.370]
C
L
13.716
[.540]
9.144
[.360]
2X 3.175
[.125]
2X 30°
31.750
[1.250]
2X 2.032
[.080]
REF
2.134
[.084] SPH
3.226±0.508
[.127±.020]
31.242±0.280
[1.230±.011] 4.585+0.250
-0.127
[.180 +.010
-.005 ]
S
4X R0.508 +.381
-.127
[R.020+.015
-.005 ]C
LC
L
C
L
C
L
h- 37275- 6-2_ po _07-21- 2010
Edition 2011-05-13
Published by
Infi neon Technologies AG
81726 Munich, Germany
© 2010 Infi neon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infi neon Technologies Offi ce (www.infi neon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infi neon Technologies Offi ce.
Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infi neon.com
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or +1 408 776 0600 International
PTFB193404F V1
Confidential, Limited Internal Distribution
Page Subjects (major changes since last revision)
Preliminary Data Sheet – DRAFT ONLY 14 of 4 Rev. P03-A, 2011-03-18
Revision History: 2011-05-13 Data Sheet
Previous Version: 2011-04-08, Data Sheet
1, 2 Features and RF testing tables updated.
9, 10, 12 Typos corrected.
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