A&MOSPEC HIGH VOLTAGE NPN SILICON NPN POWER TRANSISTORS TIP47 ... designed for line operated audio output amplifier, and switching TIP48 power supply drivers applications. TIP49 FEATURES: TIPS5O * Collector-Emitter Sustaining Voltage -250-400V(Min) *1ARated Collector Current 1.0 AMPER * ,= 10MHz(Min)@!,= 200mA POWER TRANSISTORS 250 -400 VOLTS MAXIMUM RATINGS 40 WATTS Characteristic TIP47 | TIP48 | TIP49 | TIP5O | Unit Collector-Emitter Voltage 250 300 350 400 Vv Collector-Base Voltage 350 | 400 | 450 | 500 | v yy Emitter-Base Voltage 5.0 v LE Collector Current - Continuous 1.0 A ~ Peak 2.0 TO-220 | Base Current 0.6 A B yr? 2a M Total Power Dissipation@T, = 25C 40 w aN f [Lhe Derate above 25C 0.32 wc A 4 [2 3 | : . G t Operating and Storage Junction C F- D Temperature Range -65 to +150 a val . ne F {Ke THERMAL. CHARACTERISTICS PIN 1.BASE Characteristic Max Unit 2.COLLECTOR Thermal Resistance Junction to Case 3.125 CAN 4.COLLECTOR(CASE) DIM MILLIMETERS FIGURE -1 POWER DERATING MIN MAX 40 A 14.68 | 15.31 a 35 B 9.78 | 10.42 E Cc 5.01 652 $ 30 D 13.06 | 1462 Z 5 E 3.57 4.07 2 F 242 | 3.66 x 20 G 112 | 1.36 8 a5 H | 072 | 096 G | 422 498 & 10 J 1.14 1.38 a K 220 | 297 a L 033 | 055 * 0 M 248 | 298 0 2 4100 125 150 oO 3.70 3.90 Te , TEMPERATURE(C)TIP47, TIP48, TIP49, TIP50 NPN ene eee eee ee ee ee ee eee eee ee eee ene ee ee eee neces ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Coilector-Emitter Sustaining Voitage(1) TIP47 Vogo(sus) 250 Vv (ig= 30 mA, I,= 0 ) TIP48 300 TIP49 350 TIPSO 400 Collector Cutoff Current leeo mA (V,,= 150 V, 1,= 0) TIP47 (Ve,= 200 V, I,= 0) TIP48 (Vo,_= 250 V, I= 0) TIP49 (V,,= 300 V, I= 0) TIP50 2 a oo oo0oo Collector Cutoff Current lees mA (V,,_= 350 V, V,,.= 9) TIP47 (V,,= 400 V, V,.= 0) TIP48 (V.,= 450 V, V,.= 0) TIP49 (V,.,_= 500 V, V,.= 0) TIP50 a oe oooo Emitter Cutoff Current | leo mA (Vep 5.0 V, Ig= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1g =0.3 A, Veg = 10V) 30 150 (Ie= 1.0 A, Veg = 10 V) 10 Collector-Emitter Saturation Voltage VoE(sat) Vv (Ig = 1.0A, I, =200 mA) 1.0 Base-Emitter On Voltage VeE(on) V (lp =1.0 A, Vog= 10 V) 1.5 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) fy MHz (I = 200 MA, Veg = 10 V, fregy = 2.0 MHz ) 10 Small Signal Current Gain h, (1g = 200 MA, Veg = 10 V, f = 1.0 kHz) 25 (1) Pulse Test: Pulse width = 300 us , Duty Cycle = 2.0 % (2) fr =|, | fresrTIP47,TIP48,TIP49,TIP50 NPN a FIG-2 DC CURRENT GAIN FIG-3 TURN-ON TIME Iofig*5.0 Veert0V Vec#200V T 25C z 3 b G t 4 Z w >? = g r a - 0.02 0.05 0.1 02 403 05 1.0 2.0 0.02 0.05 0.1 0.2 0.8 1 2 lc , COLLECTOR CURRENT (AMP) le, COLLECTOR CURRENT (AMP) FIG-4 "ON" VOLTAGES FIG-S TURN-OFF TIME EB Vee(sat) Blolp=5 6 = & 3 wi w o : : oO ~ > > Vee(sat) @ lo/p=5 O02 0.05 0.1 0.2 05 1.0 2.0 0.02 0.05 0.1 0.2 05 1 2 IC , COLLECTOR CURRENT (AMP) Ic, COLLECTOR CURRENT (AMP) FIG-6 ACTIVE REGION SAFE OPERATING AREA There are two limitation on the power handling ability of a transistor:average junction temperature and second _ breakdown safe operating area curves indicate le-Vce limits of the transistor that must be observed for reliable E operation i.e., the transistor must not be subjected to a greater dissipation than curves indicate. 3 The data of FIG-6 curve is base on Typiq=150 C: Tc is a variable depending on power level. second breakdown 5 pulse limits are valid for duty cycles to 10% provided 4 - Bondng Wire Limit Tup $150C,At high case temperatures,thermal limitation 8 oo TPay will reduce the power that can be handled to values less Q TIP48 than the limitations imposed by second breakdown. To=25C(Single Puse) TIP49 TIP50 5 10 20 50 100 200 500 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)