
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Symbol
VCEO
VCBO
VEBO
IC(DC)
Value Unit
Vdc
Vdc
Vdc
mAdc
Rating
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC=-10 µAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
Base-Emitter Cutoff Current (VCE= 60 Vdc,V =-3.0Vdc)
Collector-Emitter Cutoff Current (VCE= -30 Vdc,VBE=-0.5 Vdc)
Emitter-Base Cutoff Current (VEB= 3.0Vdc, I =0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBEX
ICEX
IEBO
-5.0
-
-
-
-
-
-
100
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
PZT2907A
SOT-223
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
PNP Silicon Planar Epitaxial Transistor
(Ta=25 C)
W
Junction Temperature Tj150
Storage, Temperature -55 to +150
Device Marking
PZT2907A=2907A
-60
-60
20
-50
NOTE: 1.Device mounted on an epoxy printed circuit board 1.575 inches 1.575 inches 0.059 inches; mounting pad for the
3.EMITTER
2.COLLECTOR
1. BASE
BE
C
Total Device Disspation T =25 C
A1.5
4.COLLECTOR
12
3
4
BASE
1
COLLECTOR
2, 4
3
EM ITTER
-60
-60
-5.0
-600
collector lead min. 0.93 inches.
2
1/4 Rev.A 26-Aug-05