Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 6
1Publication Order Number:
MBR0520LT1/D
MBR0520LT1G,
SBR80520LT1G,
MBR0520LT3G,
SBR80520LT3G
Preferred Devices
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
The Schottky Power Rectifier employs the Schottky Barrier
principle with a barrier metal that produces optimal forward voltage
drop−reverse current tradeoff. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package provides an alternative to the
leadless 34 MELF style package. These state−of−the−art devices have
the following features:
Features
Guardring for Stress Protection
Very Low Forward Voltage (0.38 V Max @ 0.5 A, 25C)
125C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
AEC−Q101 Qualified and PPAP Capable
SBR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Max. for 10 Seconds
ESD Ratings:
Human Body Model = 3B
Machine Model = C
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
B2 = Device Code
M = Date Code
G= Pb−Free Package
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
0.5 AMPERES, 20 VOLTS
SOD−123
CASE 425
STYLE 1
MARKING DIAGRAM
Device Package Shipping†
ORDERING INFORMATION
MBR0520LT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
MBR0520LT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
(Note: Microdot may be in either location)
SBR80520LT1G SOD−123
(Pb−Free)
3,000 /
Tape & Reel **
SBR80520LT3G SOD−123
(Pb−Free)
10,000 /
Tape & Reel ***
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
B2 MG
G
1
MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20 V
Average Rectified Forward Current
(Rated VR, TL = 90C)
IF(AV) 0.5
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM 5.5
A
Storage Temperature Range Tstg −65 to +150 C
Operating Junction Temperature TJ−65 to +125 C
Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance; Junction−to−Ambient (Note 1) RqJA 206 C/W
Thermal Resistance; Junction−to−Lead RqJL 150 C/W
1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 2) vFTJ = 25C TJ = 100CV
(iF = 0.1 Amps)
(iF = 0.5 Amps)
0.300
0.385
0.220
0.330
Maximum Instantaneous Reverse Current (Note 2) IRTJ = 25C TJ = 100CmA
(VR = 10 V)
(Rated DC Voltage = 20 V)
75 mA
250 mA
5 mA
8 mA
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
3
IR, REVERSE CURRENT (A)
1
0.1
0.01 0.1 0.2 0.3 0.4 0.5
iF, INSTANTANEOUS FORWARD CURRENT (AMPS
)
TJ = 100C75C 25C -25C
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
10,000
1000
100 010152025
75C
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
5
200
0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Capacitance
510152025
150
100
0
C, CAPACITANCE (pF)
50
10
1
0.01 010152025
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Typical Reverse Current
5
100
0.1 -25C
TJ = +25C
TJ = 100C
IR, REVERSE CURRENT (A)
1
0.875
0
LEAD TEMPERATURE (C)
Figure 5. Current Derating (Lead)
67
0.75
0.625
0.5
60
0.125
0.25
0.375
DC
= p = SQUARE WAVE
10
74 81 88
AVERAGE FORWARD CURRENT (AMP)
0.35
0.315
0
IF(AV), AVERAGE FORWARD CURRENT (AMP)
Figure 6. Power Dissipation
0.125
0.28
0.245
0.21
0
0.105
0.14
0.175
DC
SQUARE
WAVE
p
5
10
0.035
0.07
0.25 0.375 0.5 0.625 0.75 0.875 1
PF(AV), AVERAGE POWER DISSIPATION (WATT)
10295 109 116 123 130
20
TJ = 125C
IPK
IAV+20
5
IPK
IAV
MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
ÂÂÂÂ
ÂÂÂÂ
E
b
DA
L
C
1
2
A1
DIM MIN NOM MAX
MILLIMETERS INCHES
A0.94 1.17 1.35 0.037
A1 0.00 0.05 0.10 0.000
b0.51 0.61 0.71 0.020
c
1.60
0.15
0.055
D1.40 1.80
E2.54 2.69 2.84 0.100
---
3.68 0.140
L0.25
3.86
0.010
HE
0.046
0.002
0.024
0.063
0.106
0.145
0.053
0.004
0.028
0.071
0.112
0.152
MIN NOM MAX
3.56
HE
---
--- ---
0.006
--- ---
--- ---
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. CATHODE
2. ANODE
1.22
0.048
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ǒmm
inchesǓ
SCALE 10:1
ÉÉ
ÉÉ
ÉÉ
q
--- ---
q00
10 10
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MBR0520LT1/D
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