VS-MBRB20...CT-M3, VS-MBR20...CT-1-M3
www.vishay.com Vishay Semiconductors
Revision: 03-Nov-17 2Document Number: 96404
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Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg IF(AV) TC = 133 °C, rated VR
10
A
per device 20
Peak repetitive forward current per leg IFRM Rated VR, square wave, 20 kHz, TC = 133 °C 20
Non-repetitive peak surge current IFSM
5 μs sine or
3 μs rect. pulse
Following any rated load condition
and with rated VRRM applied 850
Surge applied at rated load conditions halfwave,
single phase, 60 Hz 150
Peak repetitive reverse surge current IRRM 2.0 μs, 1.0 kHz 0.5
Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 12 mH 24 mJ
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
10 A TJ = 25 °C 0.80
V
20 A 0.95
10 A TJ = 125 °C 0.70
20 A 0.85
Maximum instantaneous
reverse current IRM (1) TJ = 25 °C Rated DC voltage 0.10 mA
TJ = 125 °C 6
Threshold voltage VF(TO) TJ = TJ maximum 0.433 V
Forward slope resistance rt15.8 m
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 400 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ-65 to 150 °C
Maximum storage temperature range TStg -65 to 175
Maximum thermal resistance,
junction to case per leg RthJC DC operation 2.0
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Maximum thermal resistance,
junction to ambient RthJA DC operation 50
Approximate weight 2g
0.07 oz.
Mounting torque minimum Non-lubricated threads 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device
Case style D2PAK (TO-263AB)
MBRB2080CT
MBRB2090CT
MBRB20100CT
Case style TO-262AA
MBR2080CT-1
MBR2090CT-1
MBR20100CT-1