© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 9
1Publication Order Number:
TIP47/D
TIP47G, TIP48G, TIP50G
High Voltage NPN Silicon
Power Transistors
This series is designed for line operated audio output amplifier,
SWITCHMODE power supply drivers and other switching
applications.
Features
•250 V to 400 V (Min) − VCEO(sus)
•1 A Rated Collector Current
•Popular TO−220 Plastic Package
•These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol TIP47 TIP48 TIP50 Unit
Collector − Emitter Voltage VCEO 250 300 400 Vdc
Collector − Base Voltage VCB 350 400 500 Vdc
Emitter − Base Voltage VEB 5.0 Vdc
Collector Current
− Continuous
− Peak
IC1.0
2.0
Adc
Base Current IB0.6 Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD40
0.32 W
W/_C
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD2.0
0.016 W
W/_C
Unclamped Inducting Load
Energy (See Figure 8)
E 20 mJ
Operating and Storage
Junction Temperature Range
TJ, Tstg −65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Case
RqJC 3.125 °C/W
Thermal Resistance,
Junction−to−Ambient
RqJA 62.5 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1.0 AMPERE
POWER TRANSISTORS
NPN SILICON
250−300−400 VOLTS
40 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
TO−220AB
CASE 221A
STYLE 1
MARKING
DIAGRAM
123
4
TIPxx = Device Code
xx = 47, 48, or 50
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
TIPxxG
AYWW
TIP47G, TIP48G, TIP50G
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1) TIP47
(IC = 30 mAdc, IB = 0) TIP48
TIP50
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎ
ÎÎÎ
ÎÎÎ
250
300
400
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
−
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) TIP47
(VCE = 200 Vdc, IB = 0) TIP48
(VCE = 300 Vdc, IB = 0) TIP50
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICEO
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0) TIP47
(VCE = 400 Vdc, VBE = 0) TIP48
(VCE = 500 Vdc, VBE = 0) TIP50
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ICES
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
−
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.0
1.0
1.0
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
ÎÎÎÎÎ
IEBO
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
hFE
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
30
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
150
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.2 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 10 Vdc)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
VBE(on)
ÎÎÎ
ÎÎÎ
ÎÎÎ
−
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
1.5
ÎÎÎ
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product
(IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
ÎÎÎ
ÎÎÎ
ÎÎÎ
10
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
hfe
ÎÎÎ
ÎÎÎ
25
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
−
1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
TIP47 TO−220 50 Units / Rail
TIP47G TO−220
(Pb−Free)
50 Units / Rail
TIP48 TO−220 50 Units / Rail
TIP48G TO−220
(Pb−Free)
50 Units / Rail
TIP49 TO−220 50 Units / Rail
TIP49G TO−220
(Pb−Free)
50 Units / Rail
TIP50 TO−220 50 Units / Rail
TIP50G TO−220
(Pb−Free)
50 Units / Rail
TIP47G, TIP48G, TIP50G
http://onsemi.com
3
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
0 100
0
10
160
20
30
60 80
40 140
40
20 120
PD, POWER DISSIPATION (WATTS)
TC
TC
0
1
2
3
4
TA
TA
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
-4.0 V
Figure 2. Switching Time Equivalent Circuit
0.02
Figure 3. Turn−On Time
IC, COLLECTOR CURRENT (AMPS)
0.01
0.1 2.01.0
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
t, TIME (s)μ
0.5
0.2
0.1
0.05
0.05 0.5
0.02
1.0
tr
0.2
td
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZE
D
1.0 1.0 100
ZqJC(t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02 0.05 0.2 0.5 2.0 5.0 200 50010 20 50
TIP47G, TIP48G, TIP50G
http://onsemi.com
4
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 205.0 50 500
Figure 5. Active Region Safe Operating Area
0.02
0.05
SECONDARY BREAKDOWN LIMITED
THERMALLY LIMITED @ 25°C
BONDING WIRE LIMITED
1.0ms
dc
100ms
0.2
0.1
5.0
2.0
IC, COLLECTOR CURRENT (AMPS)
CURVES APPLY
BELOW RATED VCEO
1.0
0.5
100 200
500ms
TC ≤ 25°C
TIP47
TIP48
TIP50
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05 0.1 0.20.02 0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 6. Turn−Off Time
5.0
t, TIME (s)μ
2.0
1.0
0.5
0.2
0.1
0.05
1.0 2.0
ts
TJ = 25°C
VCC = 200 V
IC/IB = 5.0
tf
IC, COLLECTOR CURRENT (AMPS)
+4.5
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+3.5
+2.5
+1.5
0
-0.5
-1.5
-2.5
*APPLIES FOR IC/IB ≤ hFE/5
qVC FOR VCE(sat)
qVB FOR VBE
Figure 7. Temperature Coefficients
0.02 0.05 0.1 0.2 0.5 1.0 2.0
+25°C to +150°C
-55°C to +25°C
+25°C to +150°C
-55°C to +25°C
+0.5
Figure 8. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.63 A.
INPUT 50
MJE171
RBB1 =
150 W100 mH
RBB2 =
100 W
VBB2 =
0
VBB1 = 10 V
VCE MONITOR
TUT
VCC = 20 V
IC MONITOR
RS =
0.1 W
50
0.63 A
0 V
-5 V
tw ≈ 3 ms
(SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
10 V
100 ms
VCE(sat)
TIP47G, TIP48G, TIP50G
http://onsemi.com
5
IC, COLLECTOR CURRENT (AMPS)
hFE, DC CURRENT GAIN
Figure 9. DC Current Gain
100
200
0.04 0.06 0.2 2.00.02
60
40
20
10
6.0
4.0
0.1
Figure 10. “On” Voltages
VCE = 10 V
2.0 0.6 1.00.4
25°C
TJ = 150°C
-55°C
1.4
0.02
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
00.04 0.06 0.1 0.2 0.4 0.6
V, VOLTAGE (VOLTS)
1.0 2.0
VBE(sat) @ IC/IB = 5.0 V
VBE(on) @ VCE = 4 V
VCE(sat) @ IC/IB = 5.0 V
TIP47G, TIP48G, TIP50G
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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TIP47/D
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