TIP47G, TIP48G, TIP50G High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. http://onsemi.com Features * * * * 250 V to 400 V (Min) - VCEO(sus) 1 A Rated Collector Current Popular TO-220 Plastic Package These Devices are Pb-Free and are RoHS Compliant* 1.0 AMPERE POWER TRANSISTORS NPN SILICON 250-300- 400 VOLTS 40 WATTS MAXIMUM RATINGS Rating Symbol TIP47 TIP48 TIP50 Unit VCEO 250 300 400 Vdc Collector - Base Voltage VCB 350 400 500 Vdc Emitter - Base Voltage VEB Collector Current - Continuous - Peak IC Base Current IB Total Power Dissipation @ TC = 25_C Derate above 25_C PD Total Power Dissipation @ TC = 25_C Derate above 25_C PD Unclamped Inducting Load Energy (See Figure 8) Collector - Emitter Voltage 5.0 Adc 1.0 2.0 0.6 Adc 40 0.32 W W/_C 1 W W/_C E 20 mJ TJ, Tstg -65 to +150 _C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 3.125 C/W Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W THERMAL CHARACTERISTICS Characteristic 4 Vdc 2.0 0.016 Operating and Storage Junction Temperature Range MARKING DIAGRAM TO-220AB CASE 221A STYLE 1 2 TIPxxG AYWW 3 TIPxx xx A Y WW G = Device Code = 47, 48, or 50 = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 9 1 Publication Order Number: TIP47/D TIP47G, TIP48G, TIP50G IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIII IIIII III IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIII IIIIIII IIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 250 300 400 - - - Vdc - - - 1.0 1.0 1.0 - - - 1.0 1.0 1.0 - 1.0 30 10 150 - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) TIP47 TIP48 TIP50 Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) (VCE = 300 Vdc, IB = 0) TIP47 TIP48 TIP50 Collector Cutoff Current (VCE = 350 Vdc, VBE = 0) (VCE = 400 Vdc, VBE = 0) (VCE = 500 Vdc, VBE = 0) TIP47 TIP48 TIP50 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) ICEO mAdc ICES IEBO mAdc mAdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.3 Adc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE - Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.2 Adc) VCE(sat) - 1.0 Vdc Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 10 Vdc) VBE(on) - 1.5 Vdc Current-Gain - Bandwidth Product (IC = 0.1 Adc, VCE = 10 Vdc, f = 2.0 MHz) fT 10 - MHz Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 25 - - DYNAMIC CHARACTERISTICS 1. Pulse Test: Pulse width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device Package Shipping TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TO-220 50 Units / Rail TO-220 (Pb-Free) 50 Units / Rail TIP47 TIP47G TIP48 TIP48G TIP49 TIP49G TIP50 TIP50G http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) TIP47G, TIP48G, TIP50G TA 4 TC 40 3 30 2 20 1 10 0 0 TC TA 20 0 40 60 120 100 80 TC, CASE TEMPERATURE (C) 140 160 Figure 1. Power Derating TURN-ON PULSE APPROX +11 V 1.0 VCC RC TJ = 25C VCC = 200 V IC/IB = 5.0 0.5 Vin 0 VEB(off) SCOPE Vin t1 t3 APPROX +11 V Cjd << Ceb t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t, TIME (s) RB -4.0 V 0.1 td 0.05 DUTY CYCLE 2.0% APPROX -9.0 V t2 tr 0.2 0.02 0.01 0.02 TURN-OFF PULSE 0.05 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED 0.3 0.2 1.0 2.0 Figure 3. Turn-On Time Figure 2. Switching Time Equivalent Circuit 1.0 0.7 0.5 0.2 0.5 0.1 IC, COLLECTOR CURRENT (AMPS) D = 0.5 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 0.01 SINGLE PULSE 0.01 0.01 0.02 0.05 1.0 P(pk) ZqJC(t) = r(t) RqJC RqJC = 3.125C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZqJC(t) 0.05 0.2 0.5 1.0 2.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 3 20 t1 t2 DUTY CYCLE, D = t1/t2 50 100 200 500 1.0 k TIP47G, TIP48G, TIP50G IC, COLLECTOR CURRENT (AMPS) 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC 25C 2.0 100ms 1.0 1.0ms 0.5 dc 0.2 500ms SECONDARY BREAKDOWN LIMITED THERMALLY LIMITED @ 25C BONDING WIRE LIMITED 0.1 0.05 TIP47 TIP48 TIP50 CURVES APPLY BELOW RATED VCEO 0.02 5.0 100 200 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 500 Figure 5. Active Region Safe Operating Area 5.0 +4.5 V, TEMPERATURE COEFFICIENTS (mV/C) ts 2.0 t, TIME (s) 1.0 TJ = 25C VCC = 200 V IC/IB = 5.0 0.5 tf 0.2 0.1 0.05 0.02 0.05 0.1 0.2 0.5 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 +3.5 *APPLIES FOR IC/IB hFE/5 +2.5 +1.5 +25C to +150C +0.5 0 -0.5 qVC FOR VCE(sat) -1.5 qVB FOR VBE -55C to +25C +25C to +150C -55C to +25C -2.5 0.02 0.05 0.1 INPUT VOLTAGE INPUT TUT 50 VBB1 = 10 V RBB2 = 100 W VBB2 = 0 0V tw 3 ms (SEE NOTE A) -5 V 100 mH 100 ms VCC = 20 V 50 1.0 Figure 7. Temperature Coefficients VCE MONITOR RBB1 = 150 W 0.5 IC, COLLECTOR CURRENT (AMPS) Figure 6. Turn-Off Time MJE171 0.2 COLLECTOR CURRENT IC MONITOR RS = 0.1 W 0.63 A 0V VCER COLLECTOR VOLTAGE 10 V VCE(sat) Note A: Input pulse width is increased until ICM = 0.63 A. Figure 8. Inductive Load Switching http://onsemi.com 4 2.0 TIP47G, TIP48G, TIP50G 200 VCE = 10 V hFE , DC CURRENT GAIN 100 60 40 20 TJ = 150C 25C -55C 10 6.0 4.0 2.0 0.02 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 1.0 2.0 Figure 9. DC Current Gain 1.4 V, VOLTAGE (VOLTS) 1.2 1.0 VBE(sat) @ IC/IB = 5.0 V 0.8 VBE(on) @ VCE = 4 V 0.6 0.4 0.2 0 0.02 VCE(sat) @ IC/IB = 5.0 V 0.04 0.06 0.1 0.2 0.4 0.6 IC, COLLECTOR CURRENT (AMPS) Figure 10. "On" Voltages http://onsemi.com 5 TIP47G, TIP48G, TIP50G PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AG -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.036 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.91 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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