2SA1774T1G - ON Semiconductor L.L.C.

September, 2012 − Rev. 9

1Publication Order Number:

2SA1774/D

2SA1774G, S2SA1774G

PNP Silicon General

Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier

applications. This device is housed in the SC−75/SOT−416/SC−90

package which is designed for low power surface mount

applications, where board space is at a premium.

Features

•Reduces Board Space

•High hFE, 210−460 (typical)

•Low VCE(sat), < 0.5 V

•Available in 8 mm, 7−inch/3000 Unit Tape and Reel

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Value Unit

Collector − Emitter Voltage V(BR)CBO −60 Vdc

Collector − Base Voltage V(BR)CEO −50 Vdc

Emitter − Base Voltage V(BR)EBO −6.0 Vdc

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Power Dissipation (Note 1) PD150 mW

Junction Temperature TJ150 °C

Storage Temperature Range Tstg −55 ~ +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a FR−4 glass epoxy printed circuit board using the

minimum recommended footprint.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

MARKING DIAGRAM

http://onsemi.com

COLLECTOR

BASE

EMITTER

SC−75

CASE 463

STYLE 1

F9 = Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

F9 M G

Device Package Shipping†

ORDERING INFORMATION

2SA1774G SC−75

(Pb−Free)

3,000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2SA1774T1G SC−75

(Pb−Free)

3,000/Tape & Reel

S2SA1774G SC−75

(Pb−Free)

3,000/Tape & Reel

2SA1774G, S2SA1774G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic Symbol Min Typ Max Unit

Collector−Base Breakdown Voltage

(IC = −50 mAdc, IE = 0)

V(BR)CBO

−60 − −

Vdc

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−50 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = −50 mAdc, IE = 0)

V(BR)EBO

−6.0 − −

Vdc

Collector−Base Cutoff Current

(VCB = −30 Vdc, IE = 0)

ICBO

− − −0.5

Emitter−Base Cutoff Current

(VEB = −5.0 Vdc, IB = 0)

IEBO

− − −0.5

Collector−Emitter Saturation Voltage (Note 2)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

− − −0.5

Vdc

DC Current Gain (Note 2)

(VCE = −6.0 Vdc, IC = −1.0 mAdc)

hFE

120 −560

−

Transition Frequency

(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)

−140 −

MHz

Output Capacitance

(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)

COB

−3.5 −

2. Pulse Test: Pulse Width ≤300 ms, D.C. ≤2%.

2SA1774G, S2SA1774G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. Collector−Emitter Saturation Voltage

vs. Collector Current

0.1

0.01

0.1 1.0 10 100 1000

IC, COLLECTOR CURRENT (mA)

VCE, COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

TA = 150°C

TA = 25°C

TA = −55°C

IC/IB = 10

Figure 2. Base−Emitter Saturation Voltage vs.

Collector Current

1.2

0.1 1.0 10 100 1000

IC, COLLECTOR CURRENT (mA)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

1.1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

TA = −55°C

IC/IB = 10

TA = 25°C

TA = 150°C

Figure 3. DC Current Gain vs. Collector

Current

1000

0.1 1.0 10 100 1000

IC, COLLECTOR CURRENT (mA)

hFE, DC CURRENT GAIN

TA = 150°C

TA = 25°C

TA = −55°C

VCE = 6 V

Figure 4. Saturation Region

2.0

IB, BASE CURRENT (mA)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.1 1.0 10 1000.01

IC = 100 mA

IC = 50 mA

IC = 30 mA

IC = 10 mA

TA = 25°C

Figure 5. Base−Emitter Turn−ON Voltage vs.

Collector Current

0.1 1.0 10 100 1000

IC, COLLECTOR CURRENT (mA)

VBE(ON), BASE−EMITTER ON

VOLTAGE (V)

TA = 150°C

TA = 25°C

TA = −55°C

VCE = 2 V

Figure 6. Capacitance

100

VR, REVERSE VOLTAGE (V)

C, CAPACITANCE (pF)

0.1 1.0 10 100

Cibo

Cobo

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

100

2SA1774G, S2SA1774G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 7. Current Gain Bandwidth Product vs.

Collector Current

1000

IC, COLLECTOR CURRENT (mA)

ftau, CURRENT GAIN BANDWIDTH

PRODUCT (MHz)

0.1 1.0 10 100

VCE = −2 V

TA = 25°C

100

1000

Figure 8. Safe Operating Area

1000

VCE, COLLECTOR EMITTER VOLTAGE (V)

IC, COLLECTOR CURRENT (mA)

1.0 10 100

10 ms

100 ms

1 ms

Thermal

Limit

Single Pulse Test at TA = 25°C

100

2SA1774G, S2SA1774G

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SC−75/SOT−416

CASE 463

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

0.20 (0.008) D

−E−

−D−

3 PL

0.20 (0.008) E

DIM MIN NOM MAX

MILLIMETERS

A0.70 0.80 0.90

A1 0.00 0.05 0.10

C0.10 0.15 0.25

D1.55 1.60 1.65

e1.00 BSC

0.027 0.031 0.035

0.000 0.002 0.004

0.004 0.006 0.010

0.059 0.063 0.067

0.04 BSC

MIN NOM MAX

INCHES

0.15 0.20 0.30 0.006 0.008 0.012

L0.10 0.15 0.20

1.50 1.60 1.70

0.004 0.006 0.008

0.061 0.063 0.065

0.70 0.80 0.90 0.027 0.031 0.035

0.787

0.031

0.508

0.020 1.000

0.039

ǒmm

inchesǓ

SCALE 10:1

0.356

0.014

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

1.803

0.071

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any

liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over

time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under

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Phone: 81−3−5817−1050

2SA1774/D

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