TPSMB6.8 thru TPSMB43A Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors DO-214AA (SMB) Breakdown Voltage 6.8 to 43V Peak Pulse Power 600W * d e t n e t a P Cathode Band Mounting Pad Layout 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Available in uni-directional only 0.106 MAX (2.69 MAX) Dimensions in inches and (millimeters) 0.180 (4.57) 0.160 (4.06) 0.083 MIN (2.10 MIN) 0.050 MIN (1.27 MIN) 0.012 (0.305) 0.006 (0.152) 0.220 REF 0.096 (2.44) 0.084 (2.13) *Patent #'s 4,980,315 5,166,769 5,278,094 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.008 (0.203) Max. Mechanical Data Case: JEDEC DO-214AA molded plastic body over passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.003 oz., 0.093 g Packaging codes/options: 5/3.2K per 13" Reel (12mm tape), 38.4K/box 2/750 EA per 7" Reel (12mm tape), 15K/box Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Easy pick and place * Low profile package * Built-in strain relief ideal for automated placement * Exclusive patented PAR(R) oxide passivated chip construction * 600W peak pulse power capability with a 10/1000ms waveform, repetition rate (duty cycle): 0.01% * Excellent clamping capability * Low incremental surge resistance * Very fast response time * For devices with V(BR) 10V ID is typically less than 2.0mA at TA = 150C * Designed for under the hood surface mount applications * High temperature soldering: 250C/10 seconds at terminals Maximum Ratings and Thermal Characteristics (T Parameter Peak pulse power dissipation with a 10/1000s waveform(1)(2) (Fig. 1) Peak pulse current with a 10/1000s waveform(1) (Fig. 3) Peak forward surge current 8.3ms single half sine-wave (3) Instantaneous forward voltage at 50A Operating junction and storage temperature range (2)(3) A = 25C unless otherwise noted) Symbol Value Unit PPPM Minimum 600 W IPPM See Next Table A IFSM 75 A VF 3.5 V TJ, TSTG -65 to +185 C Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0mm) land areas per figure (3) Mounted on 8.3ms single half sine-wave duty cycle = 4 pulses per minute maximum Document Number 88406 06-May-02 www.vishay.com 1 TPSMB6.8 thru TPSMB43A Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Device Device Marking Code A = 25C unless otherwise noted) Breakdown Voltage V(BR)(1) at IT (V) Test Current IT (mA) Stand-off Voltage VWM (V) Maximum Reverse Leakage at VWM ID (A) TJ = 150C Maximum Maximum Peak Pulse Reverse Surge Leakage Current at VWM IPPM(2) ID (A) (A) Maximum Clamping Voltage at IPPM Vc (V) Min. Max. TPSMB6.8 KDP 6.12 7.48 10 5.50 500 1000 55.6 10.8 TPSMB6.8A KEP 6.45 7.14 10 5.80 500 1000 57.1 10.5 TPSMB7.5 TPSMB7.5A KFP KGP 6.75 7.13 8.25 7.88 10 10 6.05 6.40 250 250 500 500 51.3 53.1 11.7 11.3 TPSMB8.2 TPSMB8.2A KHP KKP 7.38 7.79 9.02 8.61 10 10 6.63 7.02 100 100 200 200 48.0 49.6 12.5 12.1 TPSMB9.1 KLP 8.19 10.0 1.0 7.37 25 50 43.5 13.8 TPSMB9.1A TPSMB10 KMP KNP 8.65 9.00 9.55 11.0 1.0 1.0 7.78 8.10 25 5.0 50 20 44.8 40.0 13.4 15.0 TPSMB10A KPP 9.50 10.5 1.0 8.55 5.0 20 41.4 14.5 TPSMB11 TPSMB11A KQP KRP 9.90 10.5 12.1 11.6 1.0 1.0 8.92 9.40 2.0 2.0 5.0 5.0 37.0 38.5 16.2 15.6 TPSMB12 TPSMB12A KSP KTP 10.8 11.4 13.2 12.6 1.0 1.0 9.72 10.2 2.0 2.0 5.0 5.0 34.7 35.9 17.3 16.7 TPSMB13 KUP 11.7 14.3 1.0 10.5 2.0 5.0 31.6 19.0 TPSMB13A TPSMB15 KVP KWP 12.4 13.5 13.7 16.5 1.0 1.0 11.1 12.1 2.0 1.0 5.0 5.0 33.0 27.3 18.2 22.0 TPSMB15A TPSMB16 KXP KYP 14.3 14.4 15.8 17.6 1.0 1.0 12.8 12.9 1.0 1.0 5.0 5.0 28.3 25.5 21.2 23.5 TPSMB16A KZP 15.2 16.8 1.0 13.6 1.0 5.0 26.7 22.5 TPSMB18 TPSMB18A LDP LEP 16.2 17.1 19.8 18.9 1.0 1.0 14.5 15.3 1.0 1.0 5.0 5.0 22.6 23.8 26.5 25.2 TPSMB20 LFP 18.0 22.0 1.0 16.2 1.0 5.0 20.6 29.1 TPSMB20A TPSMB22 LGP LHP 19.0 19.8 21.0 24.2 1.0 1.0 17.1 17.8 1.0 1.0 5.0 5.0 21.7 18.8 27.7 31.9 TPSMB22A TPSMB24 LKP LLP 20.9 21.6 23.1 26.4 1.0 1.0 18.8 19.4 1.0 1.0 5.0 5.0 19.6 17.3 30.6 34.7 TPSMB24A LMP 22.8 25.2 1.0 20.5 1.0 5.0 18.1 33.2 TPSMB27 TPSMB27A LNP LPP 24.3 25.7 29.7 28.4 1.0 1.0 21.8 23.1 1.0 1.0 5.0 5.0 15.3 16.0 39.1 37.5 TPSMB30 TPSMB30A LQP LRP 27.0 28.5 33.0 31.5 1.0 1.0 24.3 25.6 1.0 1.0 5.0 5.0 13.8 14.5 43.5 41.4 TPSMB33 LSP 29.7 36.3 1.0 26.8 1.0 5.0 12.6 47.7 TPSMB33A TPSMB36 LTP LUP 31.4 32.4 34.7 39.6 1.0 1.0 28.2 29.1 1.0 1.0 5.0 5.0 13.1 11.5 45.7 52.0 TPSMB36A TPSMB39 LVP LWP 34.2 35.1 37.8 42.9 1.0 1.0 30.8 31.6 1.0 1.0 5.0 5.0 12.0 10.6 49.9 56.4 TPSMB39A LXP 37.1 41.0 1.0 33.3 1.0 5.0 11.1 53.9 TPSMB43 TPSMB43A LYP LZP 38.7 40.9 47.3 45.2 1.0 1.0 34.8 36.8 1.0 1.0 5.0 5.0 9.7 10.1 61.9 59.3 Notes: (1) V(BR) measured after IT applied for 300s, IT=square wave pulse or equivalent (2) Surge current waveform per Fig. 3 and derate per Fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 Document Number 88406 06-May-02 TPSMB6.8 thru TPSMB43A Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig.1 - Peak Pulse Power Rating Curve TA = 25C Non-repetitive pulse waveform shown in Fig. 3 10 1.0 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas 0.1 0.1s 1.0s 10s 100s 1.0ms Fig. 2 - Pulse Derating Curve Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage (%) PPPM, Peak Power (KW) 100 100 75 50 25 0 10ms 0 td, Pulse Width, sec. 100 150 200 TA, Ambient Temperature (C) Fig. 4 - Typical Junction Capacitance Fig. 3 - Pulse Waveform 10,000 150 TJ = 25C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10sec. Peak Value IPPM 100 CJ, Junction Capacitance, pF IPPM -- Peak Pulse Current, % IRSM 50 Half Value -- IPP 2 IPPM 50 10/1000sec. Waveform as defined by R.E.A. TJ = 25C f = 1 MHz Vsig = 50mVp-p VR measured at zero bias 1,000 100 VR measured at stand-off voltage, VWM td 0 0 1.0 2.0 3.0 4.0 10 1 10 100 200 V(BR), Breakdown Voltage (V) t -- Time (ms) Fig. 5 - Maximum Non-Repetitive Peak Forward Surge Current IFSM, Peak Forward Surge Current (A) 100 TJ = TJ max 8.3ms single half sine-wave (JEDEC method) 10 1 10 100 Number of Cycles at 60 Hz Document Number 88406 06-May-02 www.vishay.com 3