DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1.2
June 2015
DF005S2 - DF10S2
Bridge Rectifier
Features
• Maximum Surge Rating: IFSM = 85 A
I2t = 30 A2Sec
• Optimized VF: Typical 0.93 V at 2 A, 25°C
• DF10S Socket Compatible
• Glass Passivated Junctions
• Lead Free Compliant to EU RoHS 2002/95/EU Directives
• Green Molding Compound: IEC61249
• Qualified with IR Reflow and Wave Soldering
Ordering Information
Part Number Top Mark Package Packing Method
DF005S2 DF005S2 SDIP 4L Tape and Reel
DF01S2 DF01S2 SDIP 4L Tape and Reel
DF02S2 DF02S2 SDIP 4L Tape and Reel
DF04S2 DF04S2 SDIP 4L Tape and Reel
DF06S2 DF06S2 SDIP 4L Tape and Reel
DF08S2 DF08S2 SDIP 4L Tape and Reel
DF10S2 DF10S2 SDIP 4L Tape and Reel
Description
With the ever-pressing need to improve power supply
efficiency, improve surge rating, improve reliability, and
reduce size, the DFxS2 family sets a new standard in
performance.
The new design offers an improved surge rating of 85 A.
This is especially important when striving to improve reli-
ability and increase efficiency. High efficiency designs
strive to reduce circuit resistance, which, unfortunately
can result in increased inrush surge. As such higher
surge current ratings can be required to maintain or
improve reliability.
The design al so of fers improved effi ciency by achieving a
2 A VF of 1.1 V maximum at 25°C. This lower VF also
supports cooler and more efficient operation.
Finally, the DFxS2 achieves all this in a SDIP surface
mount form factor, reducing board space and volumetric
requirements vs. competitive devices.
+
-
~
~
IN
OUT
SDIP
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1.2 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s n ot re co mme nded. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Note:
1. The ther mal resistances ( R θJA & ψJL) are characteri ze d wi th the de vi ce mounted on the following FR4 pr inted circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
Symbol Parameter Value Unit
DF005S2DF01S2DF02S2DF04S2DF06S2DF08S2DF10S2
VRRM Maximum Recurrent Peak
Reverse Voltage 50 100 200 400 600 800 1000 V
VRMS Maximum RMS Bridge Input
Voltage 35 70 140 280 420 560 700 V
VDC Maximum DC Blocking
Voltage 50 100 200 400 600 800 1000 V
IF(AV) Maximum Average Forward
Current TA = 40°C2.0 A
IFSM
Peak Forward Surge Current
8.3 ms Single Half-Sine
Wave Superimposed on
Rated Load(JEDEC Method)
85 A
TSTG Storage Temperature Range -55 to +150 °C
TJOperating Junction
Temperature Range -55 to +150 °C
Symbol Parameter Conditions Max. Unit
RθJA Thermal Resistance,
Junction to Ambient
Single-Di e Measuremen t
(Maximum Land Pattern: 13 x 13 mm) 60
°C/W
Multi-Di e Measurement
(Maximum Land Pattern: 13 x 13 mm) 50
Multi-Di e Measurement
(Minimum Land Pattern: 1.3 x 1.5 mm) 100
ψJL Thermal Characterization
Parameter, Junction to Lead Single-Die Measurement
(Maximum and Minimum Land Pattern) 25 °C/W
Figure 1. Maximum Pads of 2 oz Copper Figure 2. Minimum Pads of 2 oz Copper
F
F
S
S
F
F
S
S
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1.2 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage Drop per Bridge Element IF = 2.0 A 1.1 V
IRDC Reverse Current
at Rated DC Blocking Voltage TJ = 25°C3
μA
TJ = 125°C 500
I2t Rating for Fusing (t < 8.3 ms) 30 A2S
CJJunction Capacitance VR = 4.0 V,
f = 1.0 MHz 23 pF
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1.2 4
Typical Performance Characteristics
Figure 3. Typical Insta ntaneous Forwa rd
Characteristics Figure 4. Typical Reverse Characteristics
Figure 5. Maximum A verage Current vs.
Ambient Temperature Figure 6. Peak Forward Su rge Current vs.
Number of Cycles at 60Hz
Figure 7. Typical Junction Capacitance
0.01
0.1
1
10
0.20.30.40.50.60.70.80.91.01.11.2
TJ= -55 oC
TJ=125 oC
TJ=150 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
200 400 600 800 1000
1E-3
0.01
0.1
1
10
100
TJ=-55 oC
TJ=150 oC
TJ=25 oC
Reverse Current, IR[μA]
Reve rse Voltage, VR[V]
TJ=125 oC
40 60 80 100 120 140 160 180 200
0.0
0.5
1.0
1.5
2.0
Max Pad (Sigle die)
Average Current [DC]
Am bient Temperature [oC]
0 20406080100
0
10
20
30
40
50
60
70
80
90
100
IFSM, Peak Forward Surge Current [A]
Number of Cycles at 60 Hz
0 1020304050
0
5
10
15
20
25
30
35
40
f = 1 MHz
Juntion Capaci t ance, CJ[pF]
Reverse Voltage, VR[V]
DF005S2 - DF10S2 — Bridge Rectifier
© 2014 Fairchild Semiconductor Corporation www.fairchildsemi.com
DF005S2 - DF10S2 Rev. 1.2 5
Physical Dimensions
Figure 8. 4-LEAD, SDIP, 6.5 MM WIDE









&+$0)(5
237,21$/









3,1,'
237,21$/








127(6
$7+,63$&.$*('2(6127&21)25072
$1<5()(5(1&(67$1'$5'
%$//',0(16,216$5(,10,//,0(7(56
&',0(16,216$5((;&/86,9(2)%8556
02/')/$6+$1'7,(%$53527586,216
*'5$:,1*),/(1$0(0.76',3$5(9
7239,(:
6,'(9,(:
(1'9,(:
/$1'3$77(515(&200(1'$7,21
®
®
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Fairchild Semiconductor:
DF02S2 DF08S2 DF005S2 DF01S2 DF04S2 DF06S2 DF10S2