General Purpose Silicon Rectifiers
Page 1
REV:A
Voltage: 400 V
Current: 3.0 A
RoHS Device
A1N5404G-G
Dimensions in inches and (millimeter)
DO-27
Features
- Glass passivated rectifiers.
- Low reverse leakage current.
- High current capability.
- Comply with AEC-Q101
Mechanical data
- Case: JEDEC DO-27 molded plastic.
- Epoxy: UL 94V-0 rate flame retardant.
- Polarity: Color band denotes cathode.
- Mounting position: Any.
- Weight: 1.1 grams.
0.984(25.00) Min.
0.984(25.00) Min.
0.374(9.50)
0.335(8.50)
0.051(1.30)
0.047(1.20) DIA.
0.220(5.60)
0.197(5.00) DIA.
Parameter Symbol Unit
Maximum re peak reverse voltagecurrent
Maximum RMS voltage
Maximum DC blocking voltage
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum forward voltage @3.0A DC
Maximum DC reverse current
at rated DC blocking voltage
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
3.0
125
1.1
5.0
V
V
V
A
A
V
μA
Operating temperature range
Storage temperature range
Typical thermal resistance (Note 2) RθJA
TJ
TSTG
15
-55 to +150
-55 to +150
°C
°C
°C/W
NOTES:
400
280
400
@TJ=25°C
@TJ=100°C 200
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
A1N5404G-G
AQW-BG002
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
@TA=55°C
Maximum average forward
rectified current
Typical junction capacitance (Note 1) CJ50 pF
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance junction to ambient.
- Low forward voltage drop.