SPA11N60CFD - Infineon Technologies

SPA11N60CFD

CoolMOSTM Power Transistor

Features

• New revolutionary high voltage technology

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

• Extreme dv/dtrated

• High peak current capability

• Periodic avalanche rated

• Qualified for industrial grade applications according to JEDEC0)

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current1) IDTC=25 °C A

TC=100 °C

Pulsed drain current2) ID,pulse TC=25 °C

Avalanche energy, single pulse EAS ID=5.5 A, VDD=50 V 340 mJ

Avalanche energy, repetitive2),3) EAR ID=11 A, VDD=50 V

Avalanche current, repetitive2),3) IAR A

Drain source voltage slope dv/dtID=11 A, VDS=480 V,

Tj=125 °C V/ns

Reverse diode dv/dtdv/dtV/ns

Maximum diode commutation speed di/dtA/µs

Gate source voltage VGS static V

AC (f>1 Hz)

Power dissipation Ptot TC=25 °C W

Operating and storage temperature Tj,Tstg °C

600

IS=11 A, VDS=480 V,

Tj=125 °C

±20

±30

-55 ... 150

0.6

Value

VDS 600 V

RDS(on),max 0.44 "

ID1) 11 A

Product Summary

Type Package Ordering Code Marking

SPA11N60CFD TO-220-3-31 SP000216317 11N60CFD

PG-TO220-3-31

Rev. 1.4 page 1 2010-12-21

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SPA11N60CFD

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case RthJC - - 3.8 K/W

RthJA leaded - - 62

Soldering temperature, wave solderin

Tsold 1.6 mm (0.063 in.)

from case for 10 s - - 260 °C

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 600 - - V

Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=11 A - 700 -

Gate threshold voltage VGS(th) VDS=VGS,ID=1.9 mA 345

Zero gate voltage drain current IDSS VDS=600 V, VGS=0 V,

Tj=25 °C - 1.1 - µA

VDS=600 V, VGS=0 V,

Tj=150 °C - 900 -

Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA

Drain-source on-state resistance RDS(on) VGS=10 V, ID=7 A,

Tj=25 °C - 0.38 0.44 "

VGS=10 V, ID=7 A,

Tj=150 °C - 1.02 -

Gate resistance RGf=1 MHz, open drain - 0.86 -

Transconductance gfs |VDS|>2|ID|RDS(on)max,

ID=7 A - 8.3 - S

Values

Thermal resistance, junction -

ambient

Rev. 1.4 page 2 2010-12-21

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SPA11N60CFD

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance Ciss - 1200 - pF

Output capacitance Coss - 390 -

Reverse transfer capacitance Crss - 30 -

Effective output capacitance, energy

related4) Co(er) - 45 -

Effective output capacitance, time

related5) Co(tr) - 85 -

Turn-on delay time td(on) - 34 - ns

Rise time tr- 18 -

Turn-off delay time td(off) - 43 -

Fall time tf- 7 -

Gate Charge Characteristics

Gate to source charge Qgs - 9 - nC

Gate to drain charge Qgd - 23 -

Gate charge total Qg- 48 64

Gate plateau voltage Vplateau - 7.5 - V

1) Limited only by maximum temperature.

3) Repetitive avalanche causes additional power losses that can be calculated asPAV=EAR*f.

4) Co(er) is a fixed capacitance that gives the same stored energy asCoss while VDS is rising from 0 to 80% VDSS.

5) Co(tr) is a fixed capacitance that gives the same charging time asCoss while VDS is rising from 0 to 80% VDSS.

0) J-STD20 and JESD22

2) Pulse width tplimited by Tj,max

Values

VGS=0 V, VDS=25 V,

f=1 MHz

VDD=480 V,

VGS=10 V, ID=11 A,

RG=6.8 "

VDD=480 V, ID=11 A,

VGS=0 to 10 V

VGS=0 V, VDS=0 V

to 480 V

Rev. 1.4 page 3 2010-12-21

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SPA11N60CFD

Parameter Symbol Conditions Unit

min. typ. max.

Reverse Diode

Diode continuous forward current1) IS- - 11 A

Diode pulse current2) IS,pulse - - 28

Diode forward voltage VSD VGS=0 V, IF=11 A,

Tj=25 °C - 1.0 1.2 V

Reverse recovery time trr - 140 - ns

Reverse recovery charge Qrr - 0.7 - µC

Peak reverse recovery current Irrm - 11 - A

Typical Transient Thermal Characteristics

VR=480 V, IF=IS,

diF/dt=100 A/µs

TC=25 °C

Values

Symbol Value Unit Symbol Value Unit

typ. typ.

Rth1 0.0178 K/W Cth1 0.0000989 Ws/K

Rth2 0.0931 Cth2 0.000939

Rth3 0.228 Cth3 0.00303

Rth4 0.559 Cth4 0.0245

Rth5 1.58 Cth5 0.951

Rev. 1.4 page 4 2010-12-21

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SPA11N60CFD

1 Power dissipation 2 Safe operating area

Ptot=f(TC)ID=f(VDS); TC=25 °C; D=0

parameter: tp

3 Max. transient thermal impedance 4 Typ. output characteristics

ID=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C

parameter: D=tp/Tparameter: tp= 10µs VGS

0 40 80 120 160

TC[°C]

Ptot [W]

1 µs

10 µs

100 µs

1 ms

10 ms

103

102

101

100

102

101

100

10-1

VDS [V]

ID[A]

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

101

100

10-1

10-2

10-3

10-4

10-5

10-6

101

100

10-1

10-2

10-3

tp[s]

ZthJC [K/W]

5 V 5.5 V

6 V

6.5 V

7 V

8 V

10 V

20 V

0 5 10 15 20

VDS [V]

ID[A]

limited by on-state

resistance

Rev. 1.4 page 5 2010-12-21

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SPA11N60CFD

5 Typ. output characteristics 6 Typ. drain-source on-state resistance

ID=f(VDS); Tj=150 °C RDS(on)=f(ID); Tj=150 °C

parameter: tp= 10µs VGS parameter: VGS

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on)=f(Tj); ID=7 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max

parameter: Tj

typ

98 %

0.2

0.4

0.6

0.8

1.2

-60 -20 20 60 100 140 180

Tj[°C]

RDS(on) [ ]

C °25

C °150

0 2 4 6 8 10 12

VGS [V]

ID[A]

5 V

5.5 V

6 V

6.5 V

7 V

8 V

10 V

20 V

0 5 10 15 20

VDS [V]

ID[A]

5 V 5.5 V 6 V 6.5 V 7 V

10 V

20 V

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0 2 4 6 8 10 12

ID[A]

RDS(on) [ ]

Rev. 1.4 page 6 2010-12-21

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SPA11N60CFD

9 Typ. gate charge 10 Forward characteristics of reverse diode

VGS=f(Qgate); ID=11 A pulsed IF=f(VSD)

parameter: VDD parameter: Tj

11 Avalanche SOA 12 Avalanche energy

IAR=f(tAR)EAS=f(Tj); ID=5.5 A; VDD=50 V

parameter: Tj(start)

100

150

200

250

300

350

20 60 100 140 180

Tj[°C]

EAS [mJ]

25 °C

150 °C

25 °C, 98%

150 °C, 98%

102

101

100

10-1

0 0.5 1 1.5 2

VSD [V]

IF[A]

125 °C 25 °C

104

103

102

101

100

10-1

10-2

10-3

tAR [µs]

IAV [A]

120 V 480 V

0 10 20 30 40 50

Qgate [nC]

VGS [V]

Rev. 1.4 page 7 2010-12-21

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SPA11N60CFD

13 Drain-source breakdown voltage 14 Typ. capacitances

VBR(DSS)=f(Tj); ID=10 mA C=f(VDS); VGS=0 V; f=1 MHz

15 Typ. Coss stored energy 16 Typ. reverse recovery charge

Eoss=f(VDS) Qrr=f(Tj);parameter: ID=11 A

540

580

620

660

700

-60 -20 20 60 100 140 180

Tj[°C]

VBR(DSS) [V]

Ciss

Coss

Crss

104

103

102

101

100

0 100 200 300 400 500

VDS [V]

C[pF]

0 100 200 300 400 500 600

VDS [V]

Eoss [µJ]

0.6

0.7

0.8

0.9

1.1

1.2

25 50 75 100 125

Tj[°C]

Qrr [µC]

Rev. 1.4 page 8 2010-12-21

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SPA11N60CFD

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Qrr=f(IS); parameter: di/dt=100 A/µs Qrr=f(di/dt); parameter: ID=11 A

25 °C

125 °C

0.2

0.4

0.6

0.8

1.2

1 3 5 7 9 11

IS[A]

Qrr [µC]

25 °C

125 °C

0.6

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

1.6

100 300 500 700 900

di/dt[A/µs]

Qrr [µC]

Rev. 1.4 page 9 2010-12-21

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SPA11N60CFD

Definition of diode switching characteristics

Rev. 1.4 page 10 2010-12-21

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SPA11N60CFD

PG-TO-220-3-31 (FullPAK)

Rev. 1.4 page 11 2010-12-21

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SPA11N60CFD

Published by

Infineon Technologies AG

D-81726 München, Germany

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For information on the types in question, please contact your nearest Infineon Technologies office.

Infineon Technologies' components may only be used in life-support devices or systems with the

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