BZX84C18LT1G/BKN - ON Semiconductor

October, 2016 − Rev. 22 1Publication Order Number:

BZX84C2V4LT1/D

BZX84BxxxLT1G,

BZX84CxxxLT1G Series,

SZBZX84BxxxLT1G,

SZBZX84CxxxLT1G Series

Zener Voltage Regulators

250 mW SOT−23 Surface Mount

This series of Zener diodes is offered in the convenient, surface

mount plastic SOT−23 package. These devices are designed to provide

voltage regulation with minimum space requirement. They are well

suited for applications such as cellular phones, hand held portables,

and high density PC boards.

Features

•250 mW Rating on FR−4 or FR−5 Board

•Zener Breakdown Voltage Range − 2.4 V to 75 V

•Package Designed for Optimal Automated Board Assembly

•Small Package Size for High Density Applications

•ESD Rating of Class 3 (> 16 kV) per Human Body Model

•Tight Tolerance Series Available (See Page 4)

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily Solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

POLARITY: Cathode indicated by polarity band

FLAMMABILITY RATING: UL 94 V−0

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device Package Shipping†

ORDERING INFORMATION

See specific marking information in the device marking

column of the Electrical Characteristics table on page 3 o

this data sheet.

DEVICE MARKING INFORMATION

www.onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BZX84CxxxLT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

BZX84BxxxLT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

BZX84CxxxLT3G 10,000 /

Tape & Reel

BZX84BxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

SOT−23

CASE 318

STYLE 8

Cathode 1

Anode

MARKING DIAGRAM

XXXMG

XXX = Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

SZBZX84BxxxLT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

SZBZX84CxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

SZBZX84CxxxLT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

SZBZX84BxxxLT3G 10,000 /

Tape & Reel

SOT−23

(Pb−Free)

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

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MAXIMUM RATINGS

Rating Symbol Max Unit

Total Power Dissipation on FR−5 Board,

(Note 1) @ TA = 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

RqJA

250

2.0

500

mW/°C

°C/W

Total Power Dissipation on Alumina

Substrate, (Note 2) @ TA = 25°C

Derated above 25°C

Thermal Resistance, Junction−to−Ambient

RqJA

300

2.4

417

mW/°C

°C/W

Junction and Storage Temperature Range TJ, Tstg −65 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

1. FR−5 = 1.0 X 0.75 X 0.62 in.

2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.

ELECTRICAL CHARACTERISTICS

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C

unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Symbol Parameter

VZReverse Zener Voltage @ IZT

IZT Reverse Current

ZZT Maximum Zener Impedance @ IZT

IRReverse Leakage Current @ VR

VRReverse Voltage

IFForward Current

VFForward Voltage @ IF

QVZMaximum Temperature Coefficient of VZ

CMax. Capacitance @ VR = 0 and f = 1 MHz Zener Voltage Regulator

IZT

VZVF

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

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ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

(Devices listed in bold, italic are ON Semiconductor Preferred devices.)

Device* Device

Marking

VZ1 (Volts)

ZT1 =5mA

(Note 3) ZZT1

(W)

@ IZT1 =

5 mA

VZ2 (V)

ZT2 =1mA

(Note 3) ZZT2

(W)

@ IZT2 =

1 mA

VZ3 (V)

ZT3 =20mA

(Note 3) ZZT3

(W)

@ IZT3 =

20 mA

Max Reverse

Leakage

Current

qVZ

(mV/k)

@ IZT1 = 5 mA C (pF)

@ VR = 0

f = 1 MHz

Min Nom Max Min Max Min Max VR

Volts

mA@Min Max

BZX84C2V4LT1G Z11 2.2 2.4 2.6 100 1.7 2.1 600 2.6 3.2 50 50 1 −3.5 0 450

BZX84C2V7LT1G Z12 2.5 2.7 2.9 100 1.9 2.4 600 3 3.6 50 20 1 −3.5 0 450

BZX84C3V0LT1G Z13 2.8 3 3.2 95 2.1 2.7 600 3.3 3.9 50 10 1 −3.5 0 450

BZX84C3V3LT1G Z14 3.1 3.3 3.5 95 2.3 2.9 600 3.6 4.2 40 5 1 −3.5 0 450

BZX84C3V6LT1G Z15 3.4 3.6 3.8 90 2.7 3.3 600 3.9 4.5 40 5 1 −3.5 0 450

BZX84C3V9LT1G Z16 3.7 3.9 4.1 90 2.9 3.5 600 4.1 4.7 30 3 1 −3.5 −2.5 450

BZX84C4V3LT1G W9 4 4.3 4.6 90 3.3 4 600 4.4 5.1 30 3 1 −3.5 0 450

BZX84C4V7LT1/T3G Z1 4.4 4.7 5 80 3.7 4.7 500 4.5 5.4 15 3 2 −3.5 0.2 260

BZX84C5V1LT1/T3G Z2 4.8 5.1 5.4 60 4.2 5.3 480 5 5.9 15 2 2 −2.7 1.2 225

BZX84C5V6LT1/T3G Z3 5.2 5.6 6 40 4.8 6 400 5.2 6.3 10 1 2 −2.0 2.5 200

BZX84C6V2LT1/T3G Z4 5.8 6.2 6.6 10 5.6 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185

BZX84C6V8LT1/T3G Z5 6.4 6.8 7.2 15 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155

BZX84C7V5LT1G Z6 7 7.5 7.9 15 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140

BZX84C8V2LT1G Z7 7.7 8.2 8.7 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135

BZX84C9V1LT1/T3G Z8 8.5 9.1 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130

BZX84C10LT1G Z9 9.4 10 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130

BZX84C11LT1G Y1 10.4 11 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130

BZX84C12LT1G Y2 11.4 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130

BZX84C13LT1G Y3 12.4 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120

BZX84C15LT1/T3G Y4 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110

BZX84C16LT1G Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105

BZX84C18LT1/T3G Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100

BZX84C20LT1G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85

BZX84C22LT1G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85

BZX84C24LT1G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80

Device* Device

Marking

VZ1 Below

ZT1 =2mA ZZT1

Below

@ IZT1 =

2 mA

VZ2 Below

ZT2 = 0.1 m-

AZZT2

Below

@ IZT4 =

0.5 mA

VZ3 Below

ZT3 =10mA ZZT3

Below

@ IZT3 =

10 mA

Max Reverse

Leakage

Current

qVZ

(mV/k) Below

@ IZT1 = 2 mA C (pF)

@ VR = 0

f = 1 MHz

Min Nom Max Min Max Min Max VR

(V)

mA@Min Max

BZX84C27LT1G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 0.05 18.9 21.4 25.3 70

BZX84C30LT1G Y11 28 30 32 80 27.8 32 300 28.1 32.4 50 0.05 21 24.4 29.4 70

BZX84C33LT1/T3G Y12 31 33 35 80 30.8 35 325 31.1 35.4 55 0.05 23.1 27.4 33.4 70

BZX84C36LT1G Y13 34 36 38 90 33.8 38 350 34.1 38.4 60 0.05 25.2 30.4 37.4 70

BZX84C39LT1G Y14 37 39 41 130 36.7 41 350 37.1 41.5 70 0.05 27.3 33.4 41.2 45

BZX84C43LT1G Y15 40 43 46 150 39.7 46 375 40.1 46.5 80 0.05 30.1 37.6 46.6 40

BZX84C47LT1G Y16 44 47 50 170 43.7 50 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40

BZX84C51LT1G Y17 48 51 54 180 47.6 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40

BZX84C56LT1G Y18 52 56 60 200 51.5 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40

BZX84C62LT1G Y19 58 62 66 215 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35

BZX84C68LT1G Y20 64 68 72 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35

BZX84C75LT1G Y21 70 75 79 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35

3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

*Includes SZ-prefix devices where applicable.

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Device Device

Marking

VZ (Volts) @ IZT = 5 mA

(Note 4)

ZZT (W) @

IZT = 5 mA

(Note 4)

Max Reverse

Leakage

Current

qVZ

(mV/k)

@ IZT = 5 mA C (pF)

@ VR =0,

f = 1 MHz

IR@VR

Min Nom Max Max mAVolts Min Max

BZX84B3V3LT1G T2A 3.23 3.3 3.37 95 5 1 −3.5 0 450

BZX84B4V7LT1G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260

BZX84B5V1LT1G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225

BZX84B5V6LT1G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200

BZX84B6V2LT1G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185

BZX84B6V8LT1G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155

BZX84B7V5LT1G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140

BZX84B8V2LT1G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135

BZX84B9V1LT1G, T3G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130

BZX84B10LT1G T2E 9.8 10 10.2 20 0.2 7 4.5 8 130

BZX84B12LT1G T18 11.8 12 12.2 25 0.1 8 6 10 130

BZX84B15LT1G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110

BZX84B16LT1G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105

BZX84B18LT1G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100

BZX84B22LT1G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85

BZX84B24LT1G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80

4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C.

ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series)

(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA)

Device* Device

Marking

VZ (Volts) @ IZT = 2 mA

(Note 4)

ZZT (W) @

IZT = 2 mA

(Note 4)

Max Reverse

Leakage

Current

qVZ

(mV/k)

@ IZT = 2 mA C (pF)

@ VR =0,

f = 1 MHz

IR@VR

Min Nom Max Max mAVolts Min Max

BZX84B27LT1G T27 26.5 27 27.5 80 0.05 18.9 21.4 25.3 70

*Includes SZ-prefix devices where applicable.

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

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TYPICAL CHARACTERISTICS

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

VZ, NOMINAL ZENER VOLTAGE (V)

-3

-2

-1

12111098765432

Figure 1. Temperature Coefficients

(Temperature Range −55°C to +150°C)

TYPICAL TC VALUES

VZ @ IZT

VZ, TEMPERATURE COEFFICIENT (mV/ C)°θ

100

110 100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 2. Temperature Coefficients

(Temperature Range −55°C to +150°C)

VZ @ IZT

100

VZ, NOMINAL ZENER VOLTAGE

Figure 3. Effect of Zener Voltage on

Zener Impedance

101

ZZT, DYNAMIC IMPEDANCE ( )Ω

1000

100

TJ = 25°C

IZ(AC) = 0.1 IZ(DC)

f = 1 kHz

IZ = 1 mA

5 mA

20 mA

VF, FORWARD VOLTAGE (V)

Figure 4. Typical Forward Voltage

1.21.11.00.90.80.70.60.50.4

IF, FORWARD CURRENT (mA)

1000

100

75 V (MMBZ5267BLT1)

91 V (MMBZ5270BLT1)

150°C75°C 25°C 0°C

TYPICAL TC VALUES

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

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TYPICAL CHARACTERISTICS

C, CAPACITANCE (pF)

100

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 5. Typical Capacitance

1000

100

1101

BIAS AT

50% OF VZ NOM

TA = 25°C

0 V BIAS

1 V BIAS

VZ, ZENER VOLTAGE (V)

100

0.1

0.01 1086420

TA = 25°C

IZ, ZENER CURRENT (mA)

VZ, ZENER VOLTAGE (V)

100

0.1

0.0110 30 50 70 90

TA = 25°C

IR, LEAKAGE CURRENT ( A)μ

VZ, NOMINAL ZENER VOLTAGE (V)

Figure 6. Typical Leakage Current

1000

100

0.1

0.01

0.001

0.0001

0.00001 80706050403020100

+150°C

+25°C

-55°C

IZ, ZENER CURRENT (mA)

Figure 7. Zener Voltage versus Zener Current

Up to 12 V) Figure 8. Zener Voltage versus Zener Current

(12 V to 91 V)

BZX84BxxxLT1G, BZX84CxxxLT1G Series, SZBZX84BxxxLT1G, SZBZX84CxxxLT1G

Series

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW END VIEW

SOLDERING FOOTPRINT

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BZX84C2V4LT1/D

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