BC546BTA - ON SEMICONDUCTOR

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is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 1

November 2014

BC546 / BC547 / BC548 / BC549 / BC550

NPN Epitaxial Silicon Transistor

Features

• Switching and Amplifier

• High-Voltage: BC546, VCEO = 65 V

• Low-Noise: BC549, BC550

• Complement to BC556, BC557, BC558, BC559, and BC560

Ordering Information

Part Number Marking Package Packing Method

BC546ABU BC546A TO-92 3L Bulk

BC546ATA BC546A TO-92 3L Ammo

BC546BTA BC546B TO-92 3L Ammo

BC546BTF BC546B TO-92 3L Tape and Reel

BC546CTA BC546C TO-92 3L Ammo

BC547ATA BC547A TO-92 3L Ammo

BC547B BC547B TO-92 3L Bulk

BC547BBU BC547B TO-92 3L Bulk

BC547BTA BC547B TO-92 3L Ammo

BC547BTF BC547B TO-92 3L Tape and Reel

BC547CBU BC547C TO-92 3L Bulk

BC547CTA BC547C TO-92 3L Ammo

BC547CTFR BC547C TO-92 3L Tape and Reel

BC548BU B C54 8 TO-92 3L Bulk

BC548BTA BC548B TO-92 3L Ammo

BC548CTA BC548C TO-92 3L Ammo

BC549BTA BC549B TO-92 3L Ammo

BC549BTF BC549B TO-92 3L Tape and Reel

BC549CTA BC549C TO-92 3L Ammo

BC550CBU BC550C TO-92 3L Bulk

BC550CTA BC550C TO-92 3L Ammo

1. Collector 2. Base 3. Emitter

TO-92

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 2

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

hFE Classification

Symbol Parameter Value Unit

VCBO Collector-Base Voltage BC546 80 VBC547 / BC550 50

BC548 / BC549 30

VCEO Collector-Emitter Voltage BC546 65 VBC547 / BC550 45

BC548 / BC549 30

VEBO Emitter-Base Voltage BC546 / BC547 6 V

BC548 / BC549 / BC550 5

ICCollector Current (DC) 100 mA

PCCollector Power Dissipation 500 mW

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to +150 °C

Symbol Parameter Conditions Min. Typ. Max. Unit

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA

hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800

VCE(sat) Collector-Emitter Saturation

Voltage IC = 10 mA, IB = 0.5 mA 90 250 mV

IC = 100 mA, IB = 5 mA 250 600

VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 700 mV

IC = 100 mA, IB = 5 mA 900

VBE(on) Base-Emitter On Voltage VCE = 5 V, IC = 2 mA 580 660 700 mV

VCE = 5 V, IC = 10 mA 720

fTCurrent Gain Bandwidth Product VCE = 5 V, IC = 10 mA,

f = 100 MHz 300 MHz

Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF

Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF

NF Noise

Figure

BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA,

f = 1 kHz, RG = 2 k Ω

2.0 10.0

BC549 / BC550 1.2 4.0

BC549 VCE = 5 V, IC = 200 μA,

RG = 2 kΩ, f = 30 to 15000 MHz 1.4 4.0

BC550 1.4 3.0

Classification A B C

hFE 110 ~ 220 200 ~ 450 420 ~ 800

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

0 2 4 6 8 101214161820

100

IB = 50μA

IB = 100μA

IB = 150μA

IB = 200μA

IB = 250μA

IB = 300μA

IB = 350μA

IB = 400 μA

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.1

100

VCE = 5V

IC[mA], COLLECTOR CURRENT

VBE[V], BASE-EMITTER VOLTAGE

1 10 100 1000

100

1000

VCE = 5V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

1 10 100 1000

100

1000

10000

IC = 10 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

1 10 100 1000

0.1

100

f=1MHz

IE = 0

Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

0.1 1 10 100

100

1000

VCE = 5V

fT, CURRENT GAIN-BANDWIDTH PRODUCT

IC[mA], COLLECTOR CURRENT

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 4

Physical Dimensions

Figure 7. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type

BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxia l Silicon Transistor

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.1 5

Physical Dimensions (Continued)

Figure 8. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type

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The datasheet is for reference information only.

Rev. I72

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

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