BAT254T/R - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 22 2002 May 28

DISCRETE SEMICONDUCTORS

BAT254

Schottky barrier diode

ook, halfpage

M3D154

2002 May 28 2

NXP Semiconductors Product data sheet

Schottky barrier diode BAT254

FEATURES

•Low forward vo lta ge

•Guard ring protected

•Very small ceramic SMD package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits

•Blocking diodes.

DESCRIPTION

Planar Schottky barrier diode encapsulated in a SOD 110 very small ceramic

SMD package.

handbook, 4 columns

MAM214

cathode mark

top viewside viewbottom view

Fig.1 Simplified outline (SOD110) and symbol.

Marking code: L4.

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −30 V

IFcontinuous forward current −200 mA

IFRM repetitive peak forward current tp ≤ 1 s; δ ≤ 0.5 −300 mA

IFSM non-repetitive peak forward current tp < 10 ms −600 mA

Tstg storage temperatur e −65 +150 °C

Tjjunction temperature −125 °C

Tamb operating ambient temperature −65 +125 °C

2002 May 28 3

NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT254

ELECTRICAL CHARACTERISTIC S

Tamb = 25 °C unless otherwise specified.

Note

1. Pulse test: tp = 300 μs; δ = 0.02.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOD110 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage see Fig.2

IF = 0.1 mA 240 mV

IF = 1 mA 320 mV

IF = 10 mA 400 mV

IF = 30 mA 500 mV

IF = 100 mA 800 mV

IRreverse current VR = 25 V ; note 1; see Fig.3 2μA

trr reverse recove ry time when switched from IF = 10 mA to

IR = 10 mA; RL = 100 Ω; measured at

IR = 1 mA; see Fig.5

5ns

Cddiode capacit an ce f = 1 MHz; VR = 1 V; see Fig.4 10 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient note 1 315 K/W

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT254

GRAPHICAL DATA

handbook, halfpage

VF (V)

(mA)

1.20.80.40

MSA892

(3)(2)(1)

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

Fig.2 Forward current as a function of forward

voltage; typical values.

0102030

V (V)

(μA)

(1)

(2)

(3)

MSA893

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

Fig.3 Reverse current as a function of rev erse

voltage; typical values.

andbook, halfpage

0102030

VR (V)

(pF)

MSA891

f = 1 MHz; Tamb = 25 °C.

Fig.4 Diode capacitance as a function of reverse

voltage; typical values. Fig.5 Reverse recovery definitions.

ndbook, halfpage

90%

10%

IRMRC129 - 1

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NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAT254

PACKAGE OUTLINE

UNIT A

max.

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 1.6

2.10

1.90

0.1

1.40

1.10

DIMENSIONS (mm are the original dimensions)

SOD110 97-04-14

Very small ceramic rectangular surface mounted package SOD110

cathode

identifier

0 0.5 1 mm

scale

2002 May 28 6

NXP Semiconductors Pr oduct data sheet

Schottky barrier diode BAT254

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s) described in this document may have changed since this docu ment was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

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not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modification.

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratin gs only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict between information

in this document an d such terms and conditio ns, the latter

will prevail.

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may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, conveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property rights.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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The information pr e sent ed in this document does not form p art o f an y q uot ation or co nt ra ct, is believed to be accurate and relia ble and may be chan ged

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/03/pp7 Date of release: 2002 May 28 Document orde r number: 9397 750 09733