ME4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode RDS(ON)40m@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , RDS(ON)45m@VGS=4.5V (N-Ch) DMOS trench technology. This high density process is especially RDS(ON)54m@VGS=-10V (P-Ch) tailored to minimize on-state resistance. These devices are RDS(ON)60m@VGS=-4.5V(P-Ch) particularly suited for low voltage application such as cellular phone Super high density cell design for extremely low RDS(ON) and notebook computer power management and other battery Exceptional on-resistance and maximum DC current capability powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS Power Management DC/DC Converter LCD TV & Monitor Display inverter CCFL inverter PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol N-Channel 10 secs P-Channel Steady State 10 secs Drain-Source Voltage VDSS 40 -40 Gate-Source Voltage VGSS 16 16 Continuous Drain TA=25 Current(Tj=150) TA=70 Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation L=0.1mH TA=25 TA=70 Operating Junction Temperature Thermal Resistance-Junction to Ambient * ID -5.3 -4.2 4.8 3.8 -4.1 -3.2 25 IAS 13 16 EAS 8.5 13 1.56 2.45 1.52 1.5 0.94 1.47 0.91 -55 to 150 50 80 49 A mJ 2.5 TJ Thermal Resistance-Junction to Case* RJC *The device mounted on 1in2 FR4 board with 2 oz copper Rev 0. Nov. 2007 Nov, 2007-Ver4.0 4.9 25 RJA V 6.2 IDM PD Unit Steady State W 51 82 50 /W /W 01 ME4565 N- and P-Channel 40-V Power MOSFET Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter Conditions Min Typ Max Unit STATIC VGS=0V, ID=250A VGS=0V, ID=250A N-Ch P-Ch 40 -40 Gate Threshold Voltage VDS=VGS, ID=250A VDS=VGS, ID=-250A N-Ch P-Ch 0.6 -0.8 Gate Leakage Current VDS=0V, VGS=16V VDS=0V, VGS=16V V(BR)DSS Drain-Source Breakdown Voltage VGS(th) IGSS IDSS Zero Gate Voltage Drain Current ID(ON) On-State Drain Currenta RDS(ON) Drain-Source On-State Resistancea GFS Forward Transconductance VSD Diode Forward Voltage V 1.6 -1.8 V N-Ch P-Ch 100 100 nA VDS=40V, VGS=0V VDS=-40V, VGS=0V VDS=40V, VGS=0V,TJ=55 VDS=-40V, VGS=0V,TJ=55 VDS5V, VGS= 10V VDS-5V, VGS= -10V N-Ch P-Ch 1 -1 N-Ch P-Ch 10 -10 VGS=10V, ID= 5.2A VGS=-10V, ID= -4.5A N-Ch P-Ch 32 43 40 54 VGS=4.5V, ID= 4.9A VGS=-4.5V, ID= -3.9A VDS=15V, ID=5.2A VDS=-15V, ID=-4.5A N-Ch P-Ch N-Ch P-Ch 35 48 18 13 45 60 IS=1.7A, VGS=0V IS=-1.7A, VGS=0V N-Ch P-Ch 0.78 -0.79 1.2 -1.2 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 8 12 3.3 5 2.8 5.2 0.7 4.5 500 1000 43 81 9.3 22 8 30 15 12 36 62 2 5 N-Ch P-Ch 0.9 -1.0 20 -20 A A m S V DYNAMIC Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Rg Gate Resistance Ciss Input capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-On Fall Time N-Channel VDS=20V, VGS=4.5V, ID=5.2A P-Channel VDS=-20V, VGS=-4.5V, ID=-4.5A VGS=0V, VDS=0V, f=1MHZ N-Channel VDS=20V, VGS=0V, F=1MHz P-Channel VDS=-20V, VGS=0V, F=1MHz N-Channel VDD=15V, RL =15 ID=1A, VGEN=10V, RG=6 P-Channel VDD=-15V, RL =15 ID=-1A, VGEN=-10V,RG=6 nC pF ns Notes: a. Pulse test; pulse width 300us, duty cycle 2% Rev 0. Nov. 2007 Nov, 2007-Ver4.0 02 ME4565 N- and P-Channel 40-V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Nov. 2007 Nov, 2007-Ver4.0 N-CHANNEL 03 ME4565 N- and P-Channel 40-V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Nov. 2007 Nov, 2007-Ver4.0 N-CHANNEL 04 ME4565 N- and P-Channel 40-V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Nov. 2007 Nov, 2007-Ver4.0 P-CHANNEL 05 ME4565 N- and P-Channel 40-V Power MOSFET Typical Characteristics (TJ =25 Noted) Rev 0. Nov. 2007 Nov, 2007-Ver4.0 P-CHANNEL 06 ME4565 N- and P-Channel 40-V Power MOSFET SOP-8 Package Outline DIM MILLIMETERS MIN MAX A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e Rev 0. Nov. 2007 Nov, 2007-Ver4.0 1.27 BSC H 5.80 6.20 h 0.25 0.50 L 0.40 1.25 0 7 07