High Power Bipolar Transistor
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Feature:
• NPN plastic power transistors
• General purpose amplier and switching applications
Characteristic Symbol BD243C Unit
Collector-Base Voltage (Open Emitter) VCBO
Max.
100 V
Collector Emitter Voltage (Open Base) VCEO
Collector Current IC6 A
Total Power Dissipation upto TC = 25°C Ptot 65 W
Junction Temperature Tj150 °C
Collector Current Saturation Voltage
IC = 6A, IB = 1A VCE (Sat) 1.5
V
DC Current Gain
IC = 0.3A; VCE = 4V hFE Min. 30
Ratings (at Ta = 25°C unless otherwise specied) Limiting Values
Collector-Base Voltage (Open Emitter) VCBO
Max.
100
VCollector Emitter Voltage (Open Base) VCEO
Emitter-Base Voltage (Open Collector) VEBO 5
Collector Current
IC
6
ACollector Current (Peak) 10
Base Current IB2
Total Power Dissipation upto TC = 25°C Ptot 65 W
Junction Temperature Tj150
°C
Storage Temperature Tstg -65 to +150
Absolute Maximum Ratings:
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
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High Power Bipolar Transistor
Characteristic Symbol BD243C Unit
Thermal Resistance
From Junction to Case Rth (j-c) - 1.92 °C/W
Characteristics Ta = 25°C unless otherwise specied
Collector Cut off Current
IB = 0; VCE = 60V
VBE = 0; VCE = VCEO
ICEO
ICES Max.
0.7
0.4 mA
Emitter Cut off Current
IC = 0; VEB = 5V IEBO 1
Breakdown Voltages
IC = 30mA; IB = 0
IC = 1mA; IE = 0
IE = 1mA; IC = 0
VCEO (Sus)*
VCBO
VEBO
Min.
100
100
5
V
Saturation Voltage
IC = 6A; IB = 1A VCE (sat)*
Max.
1.5
Base Emitter On Voltage
IC = 6A; VCE = 4V VBE (on)* 2
DC Current Gain
IC = 0.3A; VCE = 4V
IC = 3A; VCE = 4V
hFE*
Min.
30
15 -
Small Signal Current Gain
IC = 0.5A; VCE = 10V; f = 1kHz hfe 20
Transition Frequency
IC = 0.5A; VCE = 10V; f = 1MHz fT (1) 3MHz
Absolute Maximum Ratings:
* Pulse Test: Pulse Width ≤300μs; Duty Cycle ≤2%.
(1) fT = |hfe| • ftest
High Power Bipolar Transistor
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Important Notice : This data sheet and its contents (the “Information”) belong to the members of the Premier Farnell group of companies (the “Group”) or are licensed to it. No licence is granted
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without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any
error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any
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Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
Description Part Number
Transistor, NPN, TO-220 BD243C
Part Number Table
Dimensions Min. Max.
A 14.42 16.51
B 9.63 10.67
C 3.56 4.83
D - 0.9
E1.15 1.4
F 3.75 3.88
G 2.29 2.79
H2.54 3.43
J - 0.56
K 12.7 14.73
L2.8 4.07
M 2.03 2.92
N - 31.24
O7°
Dimensions : Millimetres
Pin Conguration:
1. Base
2. Collector
3. Emitter
4. Collector
