LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon BCW61BLT1 BCW61CLT1 BCW61DLT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector-Emitter Voltage V CEO - 32 Vdc Collector-Base Voltage V CBO - 32 Vdc Emitter-Base Voltage V - 5.0 Vdc - 100 mAdc Collector Current -- Continuous EBO IC CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO - 32 -- Vdc V - 5.0 -- Vdc (VCE = -32 Vdc, ) -- -20 nAdc (VCE = -32 Vdc, TA = 150C) -- -20 Adc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0 ) Emitter-Base Breakdown Voltage (I E= -1.0 Adc, I C = 0) Collector Cutoff Current (BR)EBO I CES 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. M10-1/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 30 40 100 -- -- -- 140 250 380 310 460 630 80 100 100 -- -- -- 175 250 350 350 500 700 -- -- - 0.55 - 0.25 - 0.68 -0.6 - 1.05 - 0.85 - 0.6 - 0.75 -- 6.0 pF -- 6.0 dB -- 150 ns -- 800 ns ON CHARACTERISTICS DC Current Gain ( IC= - 10 Adc, VCE = - 5.0 Vdc ) hFE BCW61B BCW61C BCW61D ( IC= - 2.0 mAdc, VCE = - 5.0 Vdc ) hFE BCW61B BCW61C BCW61D ( IC= - 50 mAdc, VCE = - 1.0 Vdc ) -- hFE BCW61B BCW61C BCW61D AC Current Gain ( VCE = - 5.0Vdc, IC= - 2.0 mAdc, f= 1.0 kHz ) -- -- hFE BCW61B BCW61C BCW61D Collector-Emitter Saturation Voltage ( IC = - 50 mAdc, IB = - 1.25 mAdc ) ( IC = - 10 mAdc, IB = - 0.25 mAdc ) Base-Emitter Saturation Voltage ( IC = - 50 mAdc, IB = - 1.25 mAdc ) ( IC = - 10 mAdc, IB = - 0.25 mAdc ) Base-Emitter On Voltage ( IC = - 2.0 mAdc, VCE = - 5.0 Vdc ) -- V CE(sat) Vdc V BE(sat) Vdc V BE(on) Vdc SMSMALL-SIGNAL CHARACTERISTICS Output Capacitance C obo (V CE = - 10 Vdc, I C = 0, f = 1.0 MHz) Noise Figure NF (V CE = - 5.0 Vdc, I C = - 0.2 mAdc, R S = 2.0 k, f = 1.0 kHz, BW = 200 Hz) SWITCHING CHARACTERISTICS Turn-On Time t on (I C = - 10 mAdc, I B1 = - 1.0 mAdc) Turn-Off Time t off (I B2 =- 1.0 mAdc, V BB = - 3.6 Vdc, R 1 = R 2 = 5.0 k, R L = 990 ) M10-2/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 TYPICAL NOISE CHARACTERISTICS (V CE = -5.0 Vdc, T A = 25C) 1.0 BANDWIDTH = 1.0 Hz ~0 R ~ 7.0 5.0 IC=10 A 5.0 30A 100A 300A 3.0 1.0mA BANDWIDTH = 1.0 Hz ~ RS~ 8 7.0 S I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) 10 2.0 IC=1.0mA 3.0 2.0 300A 1.0 0.7 100A 0.5 30A 0.3 0.2 10A 0.1 1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 10 k 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current 5.0k 10 k NOISE FIGURE CONTOURS (V CE = -5.0 Vdc, T A = 25C) 1.0M BANDWIDTH = 1.0 Hz 500k 200k 100k 50k 20k 10k 5.0k 0.5 dB 1.0 dB 2.0k 1.0k 2.0 dB 500 3.0 dB 5.0dB 200 100 10 20 30 50 70 100 200 300 500 700 1.0K R S , SOURCE RESISTANCE ( ) R S , SOURCE RESISTANCE ( ) 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 2.0k 1.0 dB 1.0k 2.0 dB 3.0 dB 500 200 5.0 dB 100 10 20 30 50 70 100 200 300 500 700 1.0K I C , COLLECTOR CURRENT (A) I C , COLLECTOR CURRENT (A) Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz R S , SOURCE RESISTANCE ( ) 1.0M 10 Hz to 15.7KHz 500k 200k 100k Noise Figure is Defined as: 50k 20k NF = 20 log 10 10k 5.0k 2.0k 1.0 dB 1.0k 2.0 dB 3.0 dB 5.0 dB 500 200 100 20 30 50 70 1/ 2 S 0.5 dB 10 e n 2 +4KTRS +I n2 R S2 ( ---------------) 4KTR 100 200 300 e n = Noise Voltage of the Transistor referred to the input. (Figure 3) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10 -23 j/K) T = Temperature of the Source Resistance (K) R s = Source Resistance ( ) 500 700 1.0K I C , COLLECTOR CURRENT (A) Figure 5. Wideband M10-3/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 100 I C , COLLECTOR CURRENT (mA) 1.0 T A= 25C BCW61 0.8 I C= 1.0 mA 0.6 50 mA 10 mA 100 mA 0.4 0.2 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 80 350A 300A 250A 60 200A 150A 40 100A 50 A 20 15 20 25 30 35 40 V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. Collector Characteristics 1.0 V BE(sat) @ I C /I B = 10 0.6 V BE(on)@ V CE= 1.0 V 0.4 V CE(sat) @ I C /I B = 10 0 0.1 10 I B , BASE CURRENT (mA) 1.2 0.2 5.0 Figure 6. Collector Saturation Region T J = 25C 0.8 0 20 1.4 V, VOLTAGE (VOLTS) I B= 400 A T A = 25C PULSE WIDTH =300 s DUTY CYCLE<2.0% 0 0.002 0.0050.010.02 0.2 0.5 1.0 2.0 5.0 10 20 50 100 V , TEMPERATURE COEFFICIENTS (mV/C) V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS) TYPICAL STATIC CHARACTERISTICS 1.6 *APPLIES for I C / I B< h FE / 2 0.8 VC for V CE(sat) 25C to 125C 0 -55C to 25C -0.8 25C to 125C -1.6 VB for V BE -55C to 25C -2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 8. "On" Voltages Figure 9. Temperature Coefficients 100 M10-4/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 TYPICAL DYNAMIC CHARACTERISTICS 500 1000 V CC= 3.0 V IC /I B= 10 T J= 25C 300 500 100 70 200 50 100 30 tf 20 td @ V BE(off)= 0.5 V 10 ts 300 t, TIME (ns) t, TIME (ns) 200 VCC= -3.0 V IC /I B= 10 IB1=IB2 T J= 25C 700 70 50 tf 30 20 7.0 10 5.0 2.0 3.0 5.0 7.0 10 20 30 50 70 -1.0 100 -5.0 -7.0 -10 -20 -30 -50 -70 -100 I C , COLLECTOR CURRENT (mA) Figure 10. Turn-On Time Figure 11. Turn-Off Time 10.0 500 T J= 25C T J = 25C 7.0 V CE=20 V 300 C ib 5.0 V 200 100 70 5.0 3.0 C ob 2.0 1.0 50 0.5 r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED) -2.0 -3.0 I C , COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) f T, CURRENT- GAIN -- BANDWIDTH PRODUCT (MHz) 1.0 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 10 20 I C , COLLECTOR CURRENT (mA) V R , REVERSE VOLTAGE (VOLTS) Figure 12. Current-Gain -- Bandwidth Product Figure 13. Capacitance 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 FIGURE 19A 0.05 0.07 0.05 P(pk) t 0.01 0.02 1 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1.0 t 2.0 5.0 10 20 50 100 200 DUTY CYCLE, D = t 1 / t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN-569) 0.02 0.03 0.01 0.01 50 Z JA(t) = r(t) * RJA T J(pk) - T A = P (pk) Z JA(t) 2 500 1.0k 2.0k 5.0k 10k 20k 50k 100k t, TIME (ms) Figure 14. Thermal Response M10-5/6 LESHAN RADIO COMPANY, LTD. BCW61BLT1 BCW61CLT1 BCW61DLT1 104 DESIGN NOTE: USE OF THERMAL RESPONSE DATA V CC = 30 V I C , COLLECTOR CURRENT (nA) 103 I CEO 102 I CBO AND 101 I CEX @ V BE(off) = 3.0 V 100 10-1 10-2 -4 -2 0 +20 +40 +60 +80 +100 +120 +140 T J , JUNCTION TEMPERATURE (C) Figure 15. Typical Collector Leakage Current +160 A train of periodical power pulses can be represented by the model as shown in Figure 15. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z JA(t) , multiply the value obtained from Figure 14 by the steady state value R JA . Example: The MPS3905 is dissipating 2.0 watts peak under the following conditions: t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2) Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. M10-6/6