BCW61CLT1 - Leshan Radio Company Co., Ltd.

LESHAN RADIO COMPANY, LTD.

M10–1/6

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter V oltage V CEO – 32 Vdc

Collector–Base V oltage V CBO – 32 Vdc

Emitter–Base V oltage V EBO – 5.0 Vdc

Collector Current — Continuous I C– 100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1) PD225 mW

TA = 25°C

Derate above 25°C 1.8 mW/°C

Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W

Total Device Dissipation PD300 mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C 2.4 mW/°C

Thermal Resistance, Junction to Ambient RθJA 417 °C/W

Junction and Storage Temperature TJ , Tstg –55 to +150 °C

DEVICE MARKING

BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = –2.0 mAdc, IB = 0 ) V (BR)CEO – 32 — Vdc

Emitter–Base Breakdown V oltage

(I E= –1.0 µAdc, I C = 0) V (BR)EBO – 5.0 — Vdc

Collector Cutoff Current I CES

(VCE = –32 Vdc, ) — –20 nAdc

(VCE = –32 Vdc, TA = 150°C) — –20 µAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

BCW61BLT1

BCW61CLT1

BCW61DLT1

EMITTER

COLLECTOR

BASE

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

LESHAN RADIO COMPANY, LTD.

M10–2/6

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS

DC Current Gain hFE —

( IC= – 10 µAdc, VCE = – 5.0 Vdc ) BCW61B 30 —

BCW61C 40 —

BCW61D 100 —

( IC= – 2.0 mAdc, VCE = – 5.0 Vdc ) hFE —

BCW61B 140 310

BCW61C 250 460

BCW61D 380 630

( IC= – 50 mAdc, VCE = – 1.0 Vdc ) hFE —

BCW61B 80 —

BCW61C 100 —

BCW61D 100 —

AC Current Gain hFE —

( VCE = – 5.0Vdc, IC= – 2.0 mAdc, BCW61B 175 350

f= 1.0 kHz ) BCW61C 250 500

BCW61D 350 700

Collector–Emitter Saturation V oltage V CE(sat) Vdc

( IC = – 50 mAdc, IB = – 1.25 mAdc ) — – 0.55

( IC = – 10 mAdc, IB = – 0.25 mAdc ) — – 0.25

Base–Emitter Saturation V oltage V BE(sat) Vdc

( IC = – 50 mAdc, IB = – 1.25 mAdc ) – 0.68 – 1.05

( IC = – 10 mAdc, IB = – 0.25 mAdc ) –0.6 – 0.85

Base–Emitter On Voltage V BE(on) Vdc

( IC = – 2.0 mAdc, VCE = – 5.0 Vdc ) – 0.6 – 0.75

SMSMALL–SIGNAL CHARACTERISTICS

Output Capacitance C obo — 6.0 pF

(V CE = – 10 Vdc, I C = 0, f = 1.0 MHz)

Noise Figure NF — 6.0 dB

–

5.0 Vdc, I

–

0.2 mAdc, R

= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)

SWITCHING CHARACTERISTICS

Turn–On T ime t on — 150 ns

(I C = – 10 mAdc, I B1 = – 1.0 mAdc)

T urn–Off Time t off — 800 ns

–

1.0 mAdc, V

–

3.6 Vdc, R

= R

= 5.0 kΩ, R

= 990 Ω)

BCW61BLT1 BCW61CLT1 BCW61DLT1

LESHAN RADIO COMPANY, LTD.

M10–3/6

Noise Figure is Defined as:

NF = 20 log 10

(

–––––––––––––––)

1/ 2

e n= Noise Voltage of the Transistor referred to the input. (Figure 3)

I n= Noise Current of the T ransistor referred to the input. (Figure 4)

K = Boltzman’s Constant (1.38 x 10 –23 j/°K)

T = Temperature of the Source Resistance (°K)

R s= Source Resistance ( Ω )

e n 2 +4KTRS +I n2 R S2

4KTR S

TYPICAL NOISE CHARACTERISTICS

(V CE = –5.0 Vdc, T A = 25°C)

f, FREQUENCY (Hz)

Figure 1. Noise Voltage f, FREQUENCY (Hz)

Figure 2. Noise Current

e n , NOISE VOLTAGE (nV)

BANDWIDTH = 1.0 Hz

R S 0

IC=10 µA

100µA

30µA

300µA

1.0mA

I n , NOISE CURRENT (pA)

BANDWIDTH = 1.0 Hz

R S

IC=1.0mA

300µA

100µA

30µA

BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz

NOISE FIGURE CONTOURS

(V CE = –5.0 Vdc, T A = 25°C)

R S , SOURCE RESISTANCE ( Ω )

7.0

5.0

3.0

2.0

1.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 k 10 20 50 100 200 500 1.0k 2.0k 5.0k 10 k

1.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

10 20 30 50 70 100 200 300 500 700 1.0K

0.5 dB

2.0 dB

1.0 dB

3.0 dB

5.0dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB 5.0 dB

0.5 dB

1.0 dB

2.0 dB

3.0 dB

5.0 dB

10 Hz to 15.7KHz

10µA

BCW61BLT1 BCW61CLT1 BCW61DLT1

1.0M

500k

200k

100k

50k

20k

10k

5.0k

2.0k

1.0k

500

200

100

I C , COLLECTOR CURRENT (µA)

Figure 3. Narrow Band, 100 Hz

I C , COLLECTOR CURRENT (µA)

Figure 5. Wideband

I C , COLLECTOR CURRENT (µA)

Figure 4. Narrow Band, 1.0 kHz

LESHAN RADIO COMPANY, LTD.

M10–4/6

I B , BASE CURRENT (mA)

Figure 6. Collector Saturation Region

I C , COLLECTOR CURRENT (mA)

Figure 9. Temperature Coefficients

V CE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Characteristics

I C , COLLECTOR CURRENT (mA)

Figure 8. “On” Voltages

I C , COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

, COLLECTOR– EMITTER VOL TAGE (VOL TS)

θ V , TEMPERATURE COEFFICIENTS (mV/°C)

θ VB for V BE

∗ θ VC for V CE(sat)

BE(on)

@ V

= 1.0 V

CE(sat)

@ I

= 10

BE(sat)

@ I

= 10

T J = 25°C

= 1.0 mA 50 mA 100 mA

10 mA

= 25°C

BCW61

= 25°C

PULSE WIDTH =300 µs

DUTY CYCLE

2.0%

= 400 µA

50 µA

100µA

150µA

200µA

–55°C to 25°C

25°C to 125°C

1.4

1.2

1.0

0.8

0.6

0.4

0.2

00.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

1.6

0.8

–0.8

–1.6

–2.4 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

1.0

0.8

0.6

0.4

0.2

0.002 0.0050.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20

100

00 5.0 10 15 20 25 30 35 40

BCW61BLT1 BCW61CLT1 BCW61DLT1

TYPICAL STATIC CHARACTERISTICS

250µA

300µA

350µA

*APPLIES for I

/ I

/ 2

LESHAN RADIO COMPANY, LTD.

M10–5/6

TYPICAL DYNAMIC CHARACTERISTICS

C, CAPACITANCE (pF)

I C , COLLECTOR CURRENT (mA)

Figure 10. Turn–On Time I C , COLLECTOR CURRENT (mA)

Figure 11. Turn–Off Time

I C , COLLECT OR CURRENT (mA)

Figure 12. Current–Gain — Bandwidth Product

V R , REVERSE VOLTAGE (VOLTS)

Figure 13. Capacitance

t, TIME (ns)

, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)

td @ V BE(off)= 0.5 V

t f

VCC= –3.0 V

IC /I B= 10

IB1=IB2

T J= 25°C

t f

t s

5.0 V

C ib

C ob

T J= 25°C

500

300

200

100

7.0

5.01.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

1000

700

500

300

200

100

10 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100

500

300

200

100

0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50

10.0

7.0

5.0

3.0

2.0

1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50

V CC= 3.0 V

IC /I B= 10

T J= 25°C

V CE=20 V

T J = 25°C

BCW61BLT1 BCW61CLT1 BCW61DLT1

t, TIME (ms)

Figure 14. Thermal Response

r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)

D = 0.5

0.02

0.05

0.1

0.2

0.01 SINGLE PULSE

DUTY CYCLE, D = t 1 / t 2

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1 (SEE AN–569)

Z θJA(t) = r(t) • RθJA

T J(pk) – T A = P (pk) Z θJA(t)

FIGURE 19A

P(pk)

t 2

t 1

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k

LESHAN RADIO COMPANY, LTD.

M10–6/6

T J , JUNCTION TEMPERATURE (°C)

Figure 15. Typical Collector Leakage Current

V CC = 30 V

I C , COLLECTOR CURRENT (nA)

104

103

102

101

100

10–1

10–2

–4 –2 0 +20 +40 +60 +80 +100 +120 +140 +160

CBO

AND

CEX

@ V

BE(off)

= 3.0 V

I CEO

DESIGN NOTE: USE OF THERMAL RESPONSE DAT A

A train of periodical power pulses can be represented by the

model as shown in Figure 15. Using the model and the device

thermal response the normalized effective transient thermal re-

sistance of Figure 14 was calculated for various duty cycles.

To find Z θJA(t) , multiply the value obtained from Figure 14 by

the steady state value R θJA .

Example:

The MPS3905 is dissipating 2.0 watts peak under the follow-

ing conditions:

t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)

Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the

reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.

For more information, see AN–569.

BCW61BLT1 BCW61CLT1 BCW61DLT1