1
RHRP15120
15A, 1200V Hyperfast Diode
The RHRP15120 is a hyperfast diode with soft recovery
characteristics (trr < 65ns). It has half the recovery time of
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other power switching applications. Its low stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49098.
Symbol
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<65ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP15120 TO-220AC RHR15120
NOTE: When ordering, use the entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RHRP15120 UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VRRM 1200 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 1200 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR1200 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
(TC = 140oC) 15 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFRM
(Square Wave, 20kHz) 30 A
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IFSM
(Halfwave, 1 Phase, 60Hz) 200 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD100 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ-65 to 175 oC
Data Sheet January 2000 File Number 3677.2
1-888-INTERSIL or 321-724-7143 |Copyright © Intersil Corporation 2000
2
Electrical Specifications TC = 25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION MIN TYP MAX UNITS
VFIF = 15A - - 3.2 V
IF = 15A, TC = 150oC - - 2.6 V
IRVR = 1200V - - 100 µA
VR = 1200V, TC = 150oC - - 500 µA
trr IF = 1A, dIF/dt = 100A/µs--65ns
IF = 15A, dIF/dt = 100A/µs--75ns
taIF = 15A, dIF/dt = 100A/µs - 36 - ns
tbIF = 15A, dIF/dt = 100A/µs - 28 - ns
QRR IF = 15A, dIF/dt = 100A/µs - 150 - nC
CJVR = 10V, IF = 0A - 55 - pF
RθJC - - 1.5 oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta+t
b.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
100
0.5
10
0123 54
25oC
100oC
175oC
VR, REVERSE VOLTAGE (V)
0 400 800 1200600 1000
1000
0.01
0.1
1
10
IR, REVERSE CURRENT (µA)
200
100
100oC
25oC
175oC
RHRP15120
3
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr,t
aAND tbCURVES vs FORWARD CURRENT
FIGURE 5. trr,t
aAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves (Continued)
IF, FORWARD CURRENT (A)
0.5
0
30
15
151
45
75
t, RECOVERY TIMES (ns)
10
60
5
trr
ta
TC = 25oC, dIF/dt = 100A/µs
tb
IF, FORWARD CURRENT (A)
0.5
0
50
25
151
75
150
t, RECOVERY TIMES (ns)
10
tb
5
trr
ta
125
100
TC = 100oC, dIF/dt = 100A/µs
IF, FORWARD CURRENT (A)
0.5
0
50
151
200
t, RECOVERY TIMES (ns)
105
trr
ta
100
150
tb
TC = 175oC, dIF/dt = 100A/µs
15
3
0
100 115 145 175160
6
9
12
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
130
DC
SQ. WAVE
VR, REVERSE VOLTAGE (V)
25
175
0
50
050 100 150 200
75
100
CJ, JUNCTION CAPACITANCE (pF)
125
150
RHRP15120
4
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Test Circuits and Waveforms
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 AND t2CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IFtrr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1Ω
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1= IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP15120