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Silicon Power Transistor
TO-220
Pin 1. Base
2. Collector
3. Emitter
4. Collector (Case)
Designed for various specific and general purpose application such as; output and driver stages of amplifiers operating at frequencies
from DC to greater than 1 MHz; series, shunt and switching regulators; low and high frequency inverters / converters and many
others
Features:
•Very Low Collector Saturation Voltage
•Excellent Linearity
•Fast Switching
Dimensions Millimetres
Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.96
J 1.14 1.38
K 2.2 2.97
L 0.33 0.55
M 2.48 2.98
O 3.7 3.9
Maximum Ratings
Characteristics Symbol D44H8 Unit
Collector-Emitter Voltage VCEO 60 V
Collector-Emitter Voltage VCES 60 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous
Peak
IC
ICM
10
20 A
Base Current IB2 A
Total Power Dissipation at Tc= 25°C
Derate above 25°C PD50
0.4
W
W/°C
Operating and Storage Junction Temperature Range TJ, TSTG -55 to +150 °C
Silicon Power Transistor
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Characteristics Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 2.5 °C/W
Maximum Ratings
Characteristics Symbol Minimum Maximum Unit
OFF Characteristics
Collector-Emitter Sustaining Voltage
(IC= 300 mA, IB= 0) D44H, 8 VCEO(SUS) 60 V
Collector-Emitter Cutoff Current
(VCE = 60 V, VBE = 0) D44H, 8 ICES 10 uA
Emitter-Base Cutoff Current
(VBE = 5 V, IC= 0) D44H, 8 IEBO 100 uA
Electrical Characteristics (Tc = 25°C Unless Otherwise Noted)
Figure 1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
ON Characteristics (1)
DC Current Gain
(IC= 2 A, VCE = 1 V) D44H, 8
(IC= 4 A, VCE = 1 V)
hFE 60
Collector-Emitter Saturation Voltage
(IC= 8 A, IB= 800 mA)
(IC= 8 A, IB= 400 mA) D44H, 8
VCE(Sat) 1 V
Base-Emitter Saturation Voltage
(IC= 8 A, IB= 800 mA) All Devices VBE(sat) 1.5 V
Dynamic Characteristics
Current-Gain Bandwidth Product (2) D44H Series
(Ic= 500 mA, VCE = 10 V, f = 0.5 MHz) fT15 MHz
Output Capacitance
(VCE = 10 V, IE = 0, f = 1 MHz) Cob 220 PF
(1) Pulse Test : Pulse Width = 300 us, Duty Cycle ≤ 2%
(2) fT= | hfe | ° ftest
Silicon Power Transistor
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Electrical Characteristics (Tc = 25°C Unless Otherwise Noted)
Switching Characteristics
DC Current Gain DC Current Gain
“ON” Voltages
Rise Time Ic= 5 A
IB1 = -IB2 =
500 mA
D44H Series tr0.5 us
Storage Time D44H Series ts1 us
Fall Time D44H Series tf0.4 us
Silicon Power Transistor
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Part Number Table
Description Part Number
Silicon Power Transistor D44H8
Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces
all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising)
is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. © Premier Farnell plc 2012.
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