1N5719, 1N5767, 5082-3001, 5082-3039,
5082-3077, 5082-3080/81, 5082-3188, 5082-3379
PIN Diodes for RF Switching and Attenuating
Data Sheet
Description/Applications
These general purpose switching diodes are intended for
low power switching applications such as RF duplexers,
antenna switching matrices, digital phase shifters, and time
multiplex lters. The 5082-3188 is optimized for VHF/UHF
bandswitching.
The RF resistance of a PIN diode is a function of the current
owing in the diode. These current controlled resistors are
specied for use in control applications such as variable RF
attenuators, automatic gain control circuits, RF modula-
tors, electrically tuned lters, analog phase shifters, and
RF limiters.
Outline 15 diodes are available on tape and reel. The tape
and reel specication is patterned after RS-296-D.
Outline 15
Maximum Ratings
Junction Operating and
Storage Temperature Range .........................-65°C to +150°C
Power Dissipation 25°C ................................................. 250 mW
(Derate linearly to zero at 150°C)
Peak Inverse Voltage (PIV) ......................................same as VBR
Maximum Soldering Temperature ............... 260°C for 5 sec
Features
• Low Harmonic Distortion
• Large Dynamic Range
• Low Series Resistance
• Low Capacitance
0.41 (.016)
0.36 (.014)
25.4 (1.00)
MIN.
25.4 (1.00)
MIN.
1.93 (.076)
1.73 (.068)
CATHODE
DIMENSIONS IN MILLIMETERS AND (INCHES).
4.32 (.170)
3.81 (.150)
2
Mechanical Specications
The Avago Outline 15 package has a glass hermetic seal with
dumet leads. The lead nish is 95-5 tin-lead (SnPb) for all
PIN diodes. The leads on the Outline 15 package should be
restricted so that the bend starts at least 1/16 inch (1.6 mm)
from the glass body. Typical package inductance and ca-
pacitance are 2.5 nH and 0.13 pF, respectively. Marking is
by digital coding with a cathode band.
General Purpose Diodes
Electrical Specications at TA = 25°C
Maximum Minimum Maximum
Part Total Breakdown Residual Series Eective Carrier Reverse Recovery
Number Capacitance Voltage Resistance Lifetime Time
5082- CT (pF) VBR (V) RS (Ω) τ (ns) trr (ns)
General Purpose Switching and Attenuating
3001 0.25 200 1.0 100 (min.) 100 (typ.)
3039 0.25 150 1.25 100 (min.) 100 (typ.)
1N5719 0.3** 150 1.25 100 (min.) 100 (typ.)
3077 0.3 200 1.5 100 (min.) 100 (typ)
Band Switching
3188 1.0* 35 0.6** 70 (typ.)* 12 (typ.)
Test V
R = 50 V VR = VBR IF =100 mA IF = 50 mA IF = 20 mA
Conditions *VR = 20 V Measure *IF = 20 mA IR = 250 mA VR = 10 V
**VR = 100 V IR ≤ 10 µA **IF = 10 mA *IF = 10 mA 90% Recovery
f = 1 MHz f = 100 MHz *IR = 6 mA
Notes:
Typical CW power switching capability for a shunt switch in a 50Ω system is 2.5 W.
RF Current Controlled Resistor Diodes
Electrical Specications at TA = 25°C
Max.
Max. High Low Dierence
Eective Min. Residual Max. Resistance Resistance in
Carrier Breakdown Series Total Limit, RH (Ω) Limit, RL (Ω) Resistance
Part Lifetime Voltage Resistance Capacitance vs. Bias
Number τ (ns) VBR (V) RS (Ω) CT (pF) Min. Max. Min. Max. Slope, Dc
5082-3080 1300 (typ.) 100 2.5 0.4 1000 8**
1N5767* 1300 (typ.) 100 2.5 0.4 1000 8**
5082-3379 1300 (typ.) 50 0.4 8**
5082-3081 2500 (typ.) 100 3.5 0.4 1500 8**
Test IF = 50 mA VR = VBR, IF = 100 mA VR = 50 V IF = 0.01 mA IF = 1.0 mA Batch
Conditions IR = 250 mA Measure f = 100 MHz f = 1 MHz f = 100 MHz IF = 20 mA** Matched at
IR ≤ 10 µA f = 100 MHz IF = 0.01 mA
and 1.0 mA
f = 100 MHz
*The 1N5767 has the additional specications: τ = 1.0 msec minimum
IR = 1 µA maximum at VR = 50 V
VF = 1 V maximum at IF = 100 mA.
3
Typical Parameters at TA = 25°C (unless otherwise noted)
I
F
– FORWARD BIAS CURRENT (mA)
Figure 2. Typical RF Resistance vs.
Forward Bias Current.
10,000
1000
100
10
1
0.1
RF RESISTANCE (OHMS)
0.001 0.01 0.1
1
10 100
5082-3001
5082-3039
5082-3077
IN5719
100
10
1
0.1
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
I
F
– FORWARD CURRENT (mA)
V
F
– FORWARD VOLTAGE (V)
Figure 1. Forward Current vs. Forward
Voltage.
5082-3001, 3039,
3077, 3080
IN5719
125°C
25°C
–60°C
Figure 3. Typical RF Resistance vs.
Forward Bias Current.
I
F
– FORWARD BIAS CURRENT (mA)
100,000
10,000
1000
100
10
1
RF RESISTANCE (OHMS)
0.001 0.01 0.1
1
10 100
5082-3080
5082-3379
5082-3081
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance vs.
Reverse Voltage.
1.0
.5
0
CAPACITANCE (pF)
0 10 20
30
40 50 60 70
Figure 5. Typical Capacitance vs.
Reverse Voltage.
5082-3001
3039
3077
IN5719
5082-3039
IN5719
5082-3001
REVERSE VOLTAGE (V)
2.5
.5
1.0
1.5
2.0
0
CAPACITANCE (pF)
0 10 20
30
40 50 60 70
5082-3080
5082-3081
5082-3379
5082-3188
Figure 7. Typical Second Order
Intermodulation Distortion.
FREQUENCY (MHz)
0
80
60
40
20
100
BELOW FIRST ORDER (dB)
0 10 20
30
40 50 60 8070
10 dB Bridged Tee Attenuator
40 dB mV Output Levels
One Input Frequency Fixed 100 MHz
5082-3081
Figure 6. Typical Reverse Recovery Time
vs. Forward Current for Various Reverse
Driving Voltages.
FORWARD CURRENT (mA)
REVERSE RECOVERY TIME (ns)
0 10 20 30
V
R
= 5V
V
R
= 10V
V
R
= 20V
1000
100
10
5082-3080
5082-3379
Figure 8. Typical Cross Intermodulation
Distortion.
MODULATED FREQUENCY (MHz)
10
70
60
50
40
30
20
80
BELOW FIRST ORDER (dB)
0 10 20
30
40 50 60 8070
PIN Diode Cross Modulation
10 dB Bridged Tee Attenuator
Unmodulated Frequency 100 MHz
100% Modulation 15 kHz
40 dB mV Output Levels
5082-3081
5082-3080
5082-3379
Diode Package Marking
1N5xxx 5082-xxxx
would be marked:
1Nx xx
xxx xx
YWW YWW
where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part num-
ber. Y is the last digit of the calendar year. WW is the work week of manufac-
ture.
Examples of diodes manufactured during workweek 45 of 1999:
1N5712 5082-3080
would be marked:
1N5 30
712 80
945 945
Part Number Ordering Information
Part Number No. of devices Container
5082-3xxx#T25/1N57xx#T25 2500 Tape & Reel
5082-3xxx#T50/ 1N57xx#T50 5000 Tape & Reel
5082-3xxx/ 1N57xx 100 Antistatic bag
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Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved. Obsoletes 5989-3339EN
AV02-0477EN - June 6, 2007