European PowerSemiconductor and Electronics Company Marketing Information FZ 1050 R 12 KF4 61,5 18 M8 130 114 31,5 C C E E E G C 16,5 7 M4 28 2,5 18,5 external connection to be done C C E E C G E external connection to be done 27.3.1998 http://store.iiic.cc/ FZ 1050 R 12 KF4 Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom DC-collector current IC 1050 A Periodischer Kollektor Spitzenstrom repetitive peak collctor current tp=1 ms ICRM 2100 A Gesamt-Verlustleistung total power dissipation tC=25C, Transistor /transistor Ptot Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tp=1ms Isolations-Prufspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL iC=1050A, vGE=15V, Tvj=25C vCE sat 20 V IF 1050 A IFRM 2100 A Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage iC=1050A, vGE=15V, Tvj=125C Gate-Schwellenspannung gate threshold voltage Eingangskapazitat Kollektor-Emitter Reststrom 7 kW VGE 2,5 kV min. typ. - 2,7 max. 3,2 V - 3,3 3,9 V 4,5 5,5 6,5 V vGE(th) input capacity iC=42mA, vCE=vGE, Tvj=25C fO=1MHz,Tvj=25C,vCE=25V,vGE=0V Cies - 80 - nF collector-emitter cut-off current vCE=1200V, vGE=0V, Tvj=25C iCES - 14 - mA - 85 vCE=1200V, vGE=0V, Tvj=125C - mA Gate-Emitter Reststrom gate leakage current vCE=0V, vGE=20V, Tvj=25C iGES - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, Tvj=25C iEGS - 400 nA Einschaltzeit (ohmsche Last) turn-on time (resistive load) iC=1050A,vCE=600V,vL= 15V ton Speicherzeit (induktive Last) Fallzeit (induktive Last) storage time (inductive load) turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse - 0,7 - s RG=1,0, Tvj=125C - 0,8 - s RG=1,0, Tvj=25C - 0,9 - s RG=1,0, Tvj=125C - 1 - s iC=1050A,vCE=600V,vL= 15V fall time (inductive load) Einschaltverlustenergie pro Puls RG=1,0, Tvj=25C iC=1050A,vCE=600V,vL= 15V ts tf RG=1,0, Tvj=25C - 0,1 - s RG=1,0, Tvj=125C iC = 1050 A, vCE = 600 V, LS = 70 nH Eon VL = 15 V, RG = 1,0 , Tvj = 125C iC = 1050 A, vCE = 600 V, LS = 70 nH Eoff VL = 15 V, RG = 1,0 , Tvj = 125C - 0,15 - s - 150 - mWs - 170 - mWs - 2,2 2,7 V - 2 2,5 V vRM=600V, vEG=10V, Tvj=25C - 350 - A vRM=600V, vEG=10V, Tvj=125C - 620 - A Charakteristische Werte / Characteristic values: Invers-Diode Durchlaspannung forward voltage iF=1050A, vGE=0V, Tvj=25C VF iF=1050A, vGE=0V, Tvj=125C Ruckstromspitze Sperrverzogerungsladung peak reverse recovery current iF=1050A, -diF/dt=5,5kA/s recovered charge iF=1050A, -diF/dt=5,5kA/s IRM Qr vRM=600V, vEG=10V, Tvj=25C - 45 - As vRM=600V, vEG=10V, Tvj=125C - 135 - As Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC RthJC 0,018 C/W RthCK typ. 0,008 C/W Diode /diode, DC pro Module / per Module 0,036 C/W Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzul. Sperrschichttemperatur max. junction temperature T vj max Betriebstemperatur operating temperature T c op -40...+150 C Lagertemperatur storage temperature T stg -40...+125 C 150 C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation Al2O3 Anzugsdrehmoment f. mech. Befestigung mounting torque M1 terminals M4 Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque M2 terminals M8 Gewicht weight vCEM = 900 V RGF = RGR = 1,0 iCMK1 9000 A Tvj = 125C iCMK2 7000 A G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. http://store.iiic.cc/ 2 Nm 8...10 Nm Bedingung fur den Kurzschluschutz / Conditions for short-circuit protection tfg = 10 s VCC = 750 V vL = 15 V 3 Nm ca.1500 g FZ 1050 R 12 KF4 2500 2500 2000 2000 tv j = 25C iC [A] iC [A] 1500 1500 1000 1000 500 500 0 1 2 3 4 5 0 5 v CE [V] FZ 1050 R 12 KF4 / 1 6 7 8 9 10 FZ 1050 R 12 KF4 / 2 Bild / Fig. 1 Kollektor-Emitter-Spannung im Sattigungsbereich (typisch) / Collector-emitter-voltage in saturation region (typical) VG E = 15 V Tvj = 25C Tvj = 125C 125C 11 vGE [V] 12 2,5 vF [V] 3 Bild / Fig. 2 Ubertragungscharakteristik (typisch) / Transfer characteristic (typical) VCE = 20 V 2500 10 -1 7 5 Diode ZthJC 3 [C/W ] IGBT 2 10 2000 iF [A] 1500 -2 7 1000 5 3 500 2 10 -3 -3 10 2 3 4 6 10-2 2 3 4 6 10-1 FZ 1050 R 12 KF4 / 3 2 3 4 6 100 2 3 4 6 101 0 0,5 t [s] Bild / Fig. 3 Transienter Warmewiderstand (DC) / Transient thermal impedance (DC) 1 1,5 2 FZ 1050 R 12 KF4 / 4 Bild / Fig. 4 Durchlakennlinien der Inversdiode (typisch) Forward characteristics of the inverse diode (typical) Tvj = 25C Tvj = 125C http://store.iiic.cc/ Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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