European Power-
Semiconductor and
Electronics Company
2 7 . 3 . 1 9 9 8
Marketing Information
F Z 1 0 5 0 R 1 2 K F 4
external connection to be
done
external connection to be
done
M8
M4
61,5
18
130
31,5
28
7 16,5
18,5
C
E
C
E
E
G
C
2,5
1 1 4
C
E
G
E
C
E
C
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FZ 1050 R 12 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung collector-emitter voltage V
CES
1200 V
Kollektor-Dauergleichstrom DC-collector current I
C
1050 A
Periodischer Kollektor Spitzenstrom repetitive peak collctor current t
p
=1 ms I
CRM
2100 A
Gesamt-Verlustleistung total power dissipation t
C
=25°C, Transistor /transistor P
tot
7 kW
Gate-Emitter-Spitzenspannung gate-emitter peak voltage V
GE
± 20 V
Dauergleichstrom DC forward current I
F
1050 A
Periodischer Spitzenstrom repetitive peak forw. current t
p
=1ms I
FRM
2100 A
Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. V
ISOL
2,5 kV
Charakteristische Werte / Characteristic values: Transistor min. typ. max.
Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage i
C
=1050A, v
GE
=15V, T
vj
=25°C v
CE sat
- 2,7 3,2 V
i
C
=1050A, v
GE
=15V, T
vj
=125°C - 3,3 3,9 V
Gate-Schwellenspannung gate threshold voltage i
C
=42mA, v
CE
= v
GE
, T
vj
=25°C v
GE(th)
4,5 5,5 6,5 V
Eingangskapazität input capacity fO=1MHz,Tvj=25°C,vCE=25V,vGE=0V C
ies
- 80 - nF
Kollektor-Emitter Reststrom collector-emitter cut-off current v
CE
=1200V, v
GE
=0V, T
vj
=25°C i
CES
- 14 - mA
v CE=1200V, vGE=0V, Tvj=125°C - 85 - mA
Gate-Emitter Reststrom gate leakage current v
CE
=0V, v
GE
=20V, T
vj
=25°C i
GES
- 400 nA
Emitter-Gate Reststrom gate leakage current v
CE
=0V, v
EG
=20V, T
vj
=25°C i
EGS
- 400 nA
Einschaltzeit (ohmsche Last) turn-on time (resistive load) i
C
=1050A,v
CE
=600V,v
L
= ±15V t
on
R
G
=1,0Ω, T
vj
=25°C - 0,7 - µs
R
G
=1,0Ω, T
vj
=125°C - 0,8 - µs
Speicherzeit (induktive Last) storage time (inductive load) i
C
=1050A,v
CE
=600V,v
L
= ±15V t
s
R
G
=1,0Ω, T
vj
=25°C - 0,9 - µs
R
G
=1,0Ω, T
vj
=125°C - 1 - µs
Fallzeit (induktive Last) fall time (inductive load) i
C
=1050A,v
CE
=600V,v
L
= ±15V t
f
R
G
=1,0Ω, T
vj
=25°C - 0,1 - µs
R
G
=1,0Ω, T
vj
=125°C - 0,15 - µs
Einschaltverlustenergie pro Puls turn-on energy loss per pulse
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH
on
L
= ±15 V, R
G
= 1,0
Ω
, T
vj
= 125°C
- 150 - mWs
Abschaltverlustenergie pro Puls turn-off energy loss per pulse
C
= 1050 A, v
CE
= 600 V, L
S
= 70 nH
off
L
= ±15 V, R
G
= 1,0
Ω
, T
vj
= 125°C
- 170 - mWs
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaßspannung forward voltage i
F
=1050A, v
GE
=0V, T
vj
=25°C V
F
- 2,2 2,7 V
i
F
=1050A, v
GE
=0V, T
vj
=125°C - 2 2,5 V
Rückstromspitze peak reverse recovery current i
F
=1050A, -di
F
/dt=5,5kA/µs I
RM
v
RM
=600V, v
EG
=10V, T
vj
=25°C - 350 - A
v
RM
=600V, v
EG
=10V, T
vj
=125°C - 620 - A
Sperrverzögerungsladung recovered charge i
F
=1050A, -di
F
/dt=5,5kA/µs Q
r
v
RM
=600V, v
EG
=10V, T
vj
=25°C - 45 - µAs
v
RM
=600V, v
EG
=10V, T
vj
=125°C - 135 - µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC R
thJC
0,018 °C/W
Diode /diode, DC 0,036 °C/W
Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per Module R
thCK
typ. 0,008 °C/W
Höchstzul. Sperrschichttemperatur max. junction temperature T
vj max
150 °C
Betriebstemperatur operating temperature T
c op
-40...+150 °C
Lagertemperatur storage temperature T
stg
-40...+125 °C
Mechanische Eigenschaften / Mechanical properties
Innere Isolation internal insulation Al
2
O
3
Anzugsdrehmoment f. mech. Befestigung
mounting torque M 1 3 Nm
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque terminals M4 M 2 2 Nm
terminals M8 8...10 Nm
Gewicht weight G ca.1500 g
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
tfg = 10 µs VCC = 750 V
v L = ±15 V v CEM = 900 V
RGF = RGR = 1,0 Ω iCMK1 ≈ 9 0 0 0 A
T
vj = 125°C iCMK2 ≈ 7 0 0 0 A
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
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FZ 1 0 5 0 R 1 2 KF 4
FZ 10 50 R 12 KF 4 / 1 FZ 10 50 R 12 KF 4 / 2
FZ 10 50 R 12 KF 4 / 3 FZ 10 50 R 12 KF 4 / 4
1 2 3 4 5
i
C
[A]
i
C
[A]
v
CE [V]
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
0
5 6 7 8 9 1 0 1 1 1 2
v GE [V]
1 0 - 1
1 0 - 2
1 0 - 3
2
3
5
7
2
3
5
7
10
-3 1 0 -2 1 0 -1 1 0 0 1 0 1
2 3 4 6 2 3 4 6 2 3 4 6 2 3 4 6
ZthJC
[°C/W]
t [s]
0 , 5 1 1 , 5 2 2 , 5 3
i
F
[A]
v F [V]
B i l d / F i g . 1
K o l l e k t o r - E m i t t e r - S p a n n u n g i m S ä t t i g u n g s b e r e i c h ( t y p i s c h ) /
C o l l e c t o r - e m i t t e r - v o l t a g e i n s a t u r a t i o n r e g i o n ( t y p i c a l )
V GE = 15 V
Tvj
= 25°C
Tvj
= 125°C
B i l d / F i g . 2
Ü b e r t r a g u n g s c h a r a k t e r i s t i k ( t y p i s c h ) /
T r a n s f e r c h a r a c t e r i s t i c ( t y p i c a l )
V CE = 20 V
B i l d / F i g . 3
T r a n s i e n t e r W ä r m e w i d e r s t a n d ( D C ) /
T r a n s i e n t t h e r m a l i m p e d a n c e ( D C )
B i l d / F i g . 4
D u r c h l a ß k e n n l i n i e n d e r I n v e r s d i o d e ( t y p i s c h )
Forward characteristics of the in verse di ode (typi cal)
Tvj
= 25°C
Tvj
= 125°C
tvj =
Diode
IGBT
25°C 125°C
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Attention
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staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
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