1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 25 Vdc
Collector–Base Voltage VCBO 40 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Collector Current — Continuous IC100 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.0
8.0 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 357 °C/W
Thermal Resistance, Junction to Case R
q
JC 125 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0) V(BR)CEO 25 — — Vdc
Collector–Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0) V(BR)CBO 40 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0) ICBO — — 100 nAdc
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by BF199/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 21
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
3
BASE
2
EMITTER
BF199
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 7.0 mAdc, VCE = 10 Vdc) hFE 40 85 — —
Base–Emitter On Voltage
(IC = 7.0 mAdc, VCE = 10 Vdc) VBE(on) — 770 900 mVdc
SMALL–SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) fT400 750 — MHz
Common Emitter Feedback Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cre — 0.25 0.35 pF
Noise Figure
(IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 Ω, f = 35 MHz) Nf— 2.5 — dB
BF199
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
VCE = 10 V
TA = 25
°
C
f, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
T
C, CAPACITANCE (pF)
BF199
1000
10
20
100
200
300
500
700
1000.2 0.3 0.5 0.7 1 3 5 10 20
IC, COLLECTOR CURRENT (mA)
Figure 1. Current–Gain — Bandwidth Product
10
0.2
0.1 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Capacitances
0.3
0.4
0.5
0.7
1
2
0.2 0.5 1 3 5 10 20
Cre @ IE = 0
Cob
Cib
200
0.1 IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20
100
10
20
30
50
70
hFE, DC CURRENT GAIN
100
1
2
5
10
20
50
2 3 4 5 6 7 8
IC, COLLECTOR CURRENT (mA)
Figure 4. b11e
VCE = 10 V
TA = 25
°
C
BF199
mmhos
VCE = 10 V
100 MHz
45 MHz
10.7 MHz
b11e 470 kHz < 0.2 mmhos
mmhos
–100
–1
–2
–5
–10
–20
–50
2 3 4 5 6 7 8
IC, COLLECTOR CURRENT (mA)
Figure 5. b21e
VCE = 10 V 100 MHz
45 MHz
10.7 MHz
b21e, at 470 kHz < 0.5 mmhos
mhos
2000
1 2 3 4 5 6 7
IC, COLLECTOR CURRENT (mA)
Figure 6. b22e (boe)
µ
20
50
100
200
500
1000 VCE = 10 V 100 MHz
45 MHz
10.7 MHz
470 kHz
BF199
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
10
0.1
0.2
0.5
1
2
5
2 3 4 5 6 7 8
IC, COLLECTOR CURRENT (mA)
Figure 7. g11e (gie)
mmhos
VCE = 10 V 100 MHz
45 MHz 10.7 MHz
mmhos
200
2
5
10
20
50
1 2 3 4 5 6 7
IC, COLLECTOR CURRENT (mA)
Figure 8. g21e (Yfe)
VCE = 10 V
f = 0.47 to 45 MHz
mhos
200
1 2 3 4 5 6 7
IC, COLLECTOR CURRENT (mA)
Figure 9. g22e (goe)
µ
2
5
10
20
50
100 VCE = 10 V 100 MHz
45 MHz 10.7 MHz
470 kHz
100
470 kHz
BF199
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
CASE 029–04
(TO–226AA)
ISSUE AD
STYLE 21:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
BF199
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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