BAS31_D87Z - ON SEMICONDUCTOR

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BAS31 — Small Signal Diode

BAS31 Rev. 1.3

February 2015

BAS31

Small Signal Diode

Ordering Information

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or

low-duty-cycle operations.

Part Number Top Mark Package Packing Method

BAS31 L21 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs

BAS31_D87Z L21 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs

Symbol Parameter Value Unit

VRRM Maximum Repetitive Reverse Voltage 120 V

IF(AV) Average Rectified Forward Current 200 mA

IFSM Non-Repetitive Peak Forward

Surge Current Pulse Width = 1.0 second 1.0 A

Pulse Width = 1. 0 microsecond 2.0

TSTG Storage Temperature Range -55 to +150 °C

TJOperating Junction Te mperature 150 °C

L21

SOT-23

Connection Diagram

BAS31 — Small Signal Diode

BAS31 Rev. 1.3 2

Thermal Characteristics

Values are at TA = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

PDPower Dissipation 350 mW

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

Symbol Parameter Conditions Min. Max. Unit

VRBreakdown Voltage IR = 1.0 mA 120 V

VFForward Voltage

IF = 10 mA 750 mV

IF = 50 mA 840 mV

IF = 100 mA 900 mV

IF = 200 mA 1.00 V

IF = 400 mA 1.25 V

IRReverse Current VR = 90 V 100 nA

VR = 90 V, TA = 150°C 100 μA

CTTotal Capacitance VR = 0, f = 1.0 MHz 35 pF

trr Reverse Recovery Time IF = IR = 30 mA, IRR = 3.0 mA,

RL = 100 Ω50 ns

BAS31 — Small Signal Diode

BAS31 Rev. 1.3 3

Typical Performance Characteristics

Figure 1. Reverse Voltage vs. Reverse Current

BV - 1.0 to 100 μAFigure 2. Reverse Current vs. Reverse Voltage

IR - 55 to 205 V

Figure 3. Reverse Current vs. Reverse Voltage

IR - 180 to 255 V Figure 4. Forward Voltage vs. Forward Current

VF - 1.0 to 100 μA

Figure 5. Forward Voltage vs. Forward Current

VF - 0.1 to 10 mA Figure 6. Forward Voltage vs. Forward Current

VF - 10 to 800 mA

3 5 10 20 30 50 100

275

300

325

I - REVERSE CURRENT (uA)

V - REVERSE VOLTAGE (V)

Ta= 25°C

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten (10) Degree C increase in Temperature

55 75 95 115 135 155 175 195

V - REVERSE VOLTAGE (V)

I - REVERSE CURRENT (nA)

Ta= 25°C

GENERAL RULE: The Reverse Current of a diode will approximately

double for every ten Degree C increase in Temperature

180 200 220 240

100

V - REVERSE VOLTAGE (V)

I - REVERSE CURRENT (nA)

Ta= 25°C

255

1 2 3 5 10 20 30 50 100

250

300

350

400

450

I - FORWARD CURRENT (uA)

V - FORWARD VOLTAGE (mV)

Ta= 25°C

0.1 0.2 0.3 0.5 1 2 3 5 10

450

500

550

600

650

700

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

725 Ta= 25°C

10 20 30 50 100 200 300 500

0.7

0.8

0.9

1.1

1.2

1.3

1.4

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

800

Ta= 25°C

BAS31 — Small Signal Diode

BAS31 Rev. 1.3 4

Typical Performance Characteristics (Continued)

Figure 7. Forward Voltage vs. Ambient Temp erature

VF - 1.0 μA - 10 mA (- 40 to +80°C) Figure 8. Capacitance vs. Reverse Voltage

Figure 9. Reverse Recovery Time vs.

Reverse Recovery Current (Irr) Figure 10. Average Rectified Current(IO) and

Forward Current (IF) vs. Ambient Temperature(TA)

Figure 11. Power Derating Curve

0.001 0.003 0.01 0.03 0.1 0.3 1 3 10

200

400

600

800

I - FORWARD CURRENT (mA)

V - FORWARD VOLTAGE (mV)

Ta= 25°C

Ta= +80°C

Ta= -40°C

0 2 4 6 8 10 12 14

0.8

0.9

1.1

1.2

1.3

REVERSE VOLTAGE (V)

CAPACITANCE (pF)

Ta= 25°C

11.522.53

Irr - REVERSE RECOVERY CURRENT (mA)

REVERSE RECOVERY (nS)

IF = IR = 30 mA

Rloop = 100 Ohms

050100150

100

200

300

400

500

T - AMBIENT TEMPERATURE ( C)

I - CURRENT (mA)

I - FORWARD CURRENT STEADY STATE - mA

Io - AVERAGE RECTIFIED CURRENT - mA

0 50 100 150 200

100

200

300

400

500

I - AVERAGE TEMPERATURE ( C)

P - POWER DISSIPATION (mW)

SOT-23 Pkg

BAS31 — Small Signal Diode

BAS31 Rev. 1.3 5

Physical Dimensions

Figure 12. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE

LAND PATTERN

RECOMMENDATION

NOTES: UNLESS OTHERWISE SPECIFIED

A) REFERENCE JEDEC REGISTRATION

TO-236, VARIATION AB, ISSUE H.

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS ARE INCLUSIVE OF BURRS,

MOLD FLASH AND TIE BAR EXTRUSIONS.

D) DIMENSIONING AND TOLERANCING PER

ASME Y14.5M - 1994.

E) DRAWING FILE NAME: MA03DREV10

SEE DETAIL A

SEATING

PLANE

SCALE: 2X

GAGE PLANE

(0.55)

(0.93)

1.20 MAX

0.10

0.00

0.10 C

2.40±0.30

2.92±0.20

1.30+0.20

-0.15

0.60

0.37

0.20 A B

1.90

0.95

(0.29)

0.95

1.40

2.20

1.00

1.90

0.25

0.23

0.08

0.20 MIN

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The datasheet is for reference information only.

Rev. I73

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designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

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