TYPES TIP501, TIP502 N-P-N SILICON POWER TRANSISTORS NOTES: FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N3719, 2N3720 Max toff of 0.4usatIC=1A @ 3-A Rated Continuous Collector Current e 6 Watts at 25C Case Temperature e Min fT of 60 MHz at 10V,0.5A mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 0.260 GATE 0.240 [ 0.5 MIN 0.210 ANODE TEMPERATURE | 9-196 ONT SS MEAS. P A ogre . 2 Fs Z 0.870 9.395 BIA 0.029 0.195 0.034 0.100 MINtem}= 555g LEADS 028 DETAILS OF OUTLINE IN 0.019 THIS ZONE OPTIONAL SEATING 0016 ALL DIMENSIONS ARE IN INCHES PLANE CATHODE UNLESS OTHERWISE SPECIFIED ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage woe Collector-Emitter Voitage (See Note 1) Emitter-Base Voltage . Continuous Collector Current Peak Collector Current (See Note 2) Continuous Base Current Safe Operating Areas at (or below) 25 C Case Temperature : Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 3). Continuous Device Dissipation at (or below) 25C Free-Air Temperature (See Note 4) Operating Collector Junction Temperature Range Storage Temperature Range . Lead Temperature 1/16 Inch from Case for 10. Seconds + These values apply when the base-emitter diode is open-circuited. . This value applies for ty, = 0.5 ms, duty cycle 10%, TIPSO1 =TIPSO2 40V 60V 40v 60V 4vV4V 3 A + 10 A> 05A> . See Figures 3 and 4 <- 6 We 1w 65C to 200C 65C to 200C < 300C ~> 1 2 3. Derate linearly to 200C case temperature at the rate of 34,3 mW/C or refer to Dissipation Derating Curve, Figure 5, 4 . Derate linearly to 200C free-air temperature at the rate of 5.71 mW/C or refer to Dissipation Derating Curve, Figure 6. TEXAS INSTRUMENTS 2-233TYPES TIP5S0O1, TIPSO2 N-P-N SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature (unless otherwise noted) TIP501 TIPGO2 PARAMETER TEST CONDITIONS MIN MAX [MIN MAX UNIT ViBRICEO srookdouon Voltege Io = 20 mA, ig = 0, See Note 5 40 60 v Voce = 40V, VeeE=-2V 10 uA \ceV Collector Cutoff Voce = 60V, Vee" -2V 10 Current Voce = 40V, Vee *2V, To = 150C 1 Vee = 60V, VeeE--2V, To= 150C 7 mA lcpo Collector Cutoff Vop = 40V, lp =0 10 uA Current Vcp = 60V, le =O 10 les0 ee Curoft Veg 4V, Ic=0 1 1 | ma Static Forward Voce = 1.5 V, Ic = 0.5A 20 20 hee Current Transfer Voge 2 1.5V, Iq2iA SeeNotesSand6| 26 180] 25 180 Ratio Vcoe = 1.5, Ios tA, To = -40C 15 15 Ip= 100mA, , Io= 1A, 16 15 VBE Base-E mitter Voltage Ten 40'C 10 10" See Notes 5 and 6 Vv ig = 300 mA, Ig=3A, o o 2.3 2.3 To = 40C to 100C Ig = 100 mA, Ig = 1A, 0.75 0.76 Collector-Emitter [Tc = 40C to 100C VCE (sat) . See Notes & and 6 v Saturation Voltage [ig = 300 mA, lo=3A, 18 16 Te = 40C to 100C Smali-Signal heel eee VoE = 10V, Io = 0.64, f= 30MHz 2 2 Transfer Ratio Common-Base Cobo Open-Circuit Vop 10V, le =0,. f = 100 kHz to 1 MHz 120 120 | pF Output Capacitance - Common-Base Cibo Open-Circuit Veg = 0.5V, ig = 0, f= 100 kHz to 1 MHz 1000 1000 | pF Input Capacitance NOTES: 5. These parameters must be measured using pulse techniques. t,, = 300 us, duty cycle < 2%. Inch from the device body. switching characteristics at 25C case temperature |. These parameters are measured with voltage-sensing contacts seperate from the current-carrying contacts and located within 0.125. PARAMETER TEST CONDITIONSt MAX _|UNIT : Ign 1A, 'Bi1p OTA, VeE{otf) " ~4V. -OnT x on Turn-On Time RL = 129, Sea Figure 1 ' ki Iga lA, (p(4) = O1A, 1g(2) = 0.14, t Turn-Otf Ti 4 off ven me AL 129, See Figure 2 o tvoltage and current values shown are nominal; exact values vary slightly with transistor parameters, 2-234 TEXA S INSTRUMENTSTYPES TIP501, TIPS02 N-P-N SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +11 V wn ee -8V ss ~ tr t ook | \ OUTPUT 90% VOLTAGE WAVEFORMS FIGURE 1TURN-ON TIME 412V 122 OUTPUT INPUT TEST CIRCUIT +12 122 OUTPUT a INPUT 1N816 -3V TEST CIRCUIT HV == 90% / INPUT -8V ----4 1 aol te he | le teaol | | 10% \ OUTPUT 90% VOLTAGE WAVEFORMS FIGURE 2TURN-OFF TIME NOTES: a. The input waveforms are supplied by a# generator with the following characteristics: ty S10 ns, te 10ns, Zoye 2 602, ty = 10 us, duty cycle < 2%. b. Waveforms ere monitored on an oscilloscope with the following characteristics: tp SB ns, Bin 2 10 kN, Ci, 11.5 pF. c. Resistors must be noninductive types. a The d-c power supplies may require additional bypassing in order to minimize ringing. TEXAS INSTRUMENTS 2-235TYPES TIPSO1, TIP502 N-P-N SILICON POWER TRANSISTORS ICollector CurrentA MAXIMUM SAFE OPERATING AREAS TIP501 TIP5O2 100 100 To 25C Tos 40 Note 7 40 [See Note 7 tw = 5 us tw = 50 ws 10 < 10 we ~ 4 S 4 3 1 5 1 3 0.4 2 04 9 9 o o.7 = O41 = 600 0.04 0.04 tw =5 ms Operation 0.01 0.01 0 5 10 15 20 25 30 35 40 45 50 Oo 10 20 30 40 50 60 70 80 VceECollector-Emitter VoltageV VcECollector-Emitter VoltageV FIGURE 3 FIGURE 4 NOTE 7: Areas defined by dashec tines apply for nonrepstitive-pulse operation. The pulse may be repeated after the device has regained thermal equilibrium. THERMAL INFORMATION 2-236 CASE TEMPERATURE FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE DISSIPATION DERATING CURVE = 2 12 3 5 & & 1.0 3 3 a 8 8 08 SS > > oO o a a Rec <29.2CW 6 Nie S178 cw 3 3 0.6 2 Z ] Fe r 8 8 04 E E N\ E E o2 a c ; : a oa 0 25 50 76 100 125 150 175 200 oO 25 50 75 100 125 150 175 200 ToCase Temperature"C TaFree-Air TemperatureC FIGURE 5 FIGURE 6 Ti) cannot assume ony responsibility for ony circuits shown TEXAS INSTRUMENTS or represent thot they ore free from patent infringement TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIMI IN ORDER TO IMPROVE DESIGN AND TQ SUPPLY THE BEST PRODUCT POSSIBLE