BSR 13, BSR 14 Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN NPN Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1=B 2=E 3=C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BSR 13 BSR 14 Collector-Emitter-voltage B open VCE0 30 V 40 V Collector-Base-voltage E open VCB0 60 V 75 V Emitter-Base-voltage C open VEB0 5V 6V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 800 mA Peak Collector current - Kollektor-Spitzenstrom ICM 800 mA Peak Base current - Basis-Spitzenstrom IBM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 - - 30 nA ICB0 - - 10 :A ICB0 - - 10 nA ICB0 - - 10 :A BSR 13 IEB0 - - 30 nA BSR 14 IEB0 - - 10 nA Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 50 V, Tj = 150/C IE = 0, VCB = 60 V IE = 0, VCB = 60 V, Tj = 150/C BSR 13 BSR 14 Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 6 01.11.2003 Switching Transistors BSR 13, BSR 14 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. hFE 35 - - hFE 50 - - hFE 75 - - hFE 100 - 300 hFE 50 - - BSR 13 hFE 30 - - BSR 14 hFE 40 - - DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA BSR 13 BSR 14 VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA 1 Collector saturation volt. - Kollektor-Sattigungsspg. ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA BSR 13 VCEsat - - 400 mV BSR 14 VCEsat - - 300 mV BSR 13 VCEsat - - 1.6 V BSR 14 VCEsat - - 1V Base saturation voltage - Basis-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA BSR 13 VBEsat - - 1.3 V BSR 14 VBEsat 0.6 V - 1.2 V BSR 13 VBEsat - - 2.6 V BSR 14 VBEsat - - 2V Gain-Bandwidth Product - Transitfrequenz BSR 13 fT 250 MHz - - BSR 14 fT 300 MHz - - CCB0 - 8 pF - turn-on time ton - - 35 ns delay time td - - 15 ns tr - - 20 ns toff - - 250 ns ts - - 200 ns tf - - 60 ns VCE = 20 V, IC = 20 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 10 V, IE = ie = 0, f = 1 MHz Switching times - Schaltzeiten rise time turn-off time storage time ICon = 150 mA IBon = 15 mA - IBoff = 15 mA fall time Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 420 K/W 2) BSR 15, BSR 16 BSR 13 = U7 BSR 14 = U8 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 7