1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
601.11.2003
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BSR 13, BSR 14 Switching Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B 2 = E 3 = C
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BSR 13 BSR 14
Collector-Emitter-voltage B open VCE0 30 V 40 V
Collector-Base-voltage E open VCB0 60 V 75 V
Emitter-Base-voltage C open VEB0 5 V 6 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC800 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 800 mA
Peak Base current – Basis-Spitzenstrom IBM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 50 V BSR 13 ICB0 – – 30 nA
IE = 0, VCB = 50 V, Tj = 150/CI
CB0 – – 10 :A
IE = 0, VCB = 60 V BSR 14 ICB0 – – 10 nA
IE = 0, VCB = 60 V, Tj = 150/CI
CB0 – – 10 :A
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V BSR 13 IEB0 – – 30 nA
BSR 14 IEB0 – – 10 nA
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
7
01.11.2003
Switching Transistors BSR 13, BSR 14
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 10 V, IC = 0.1 mA
BSR 13
BSR 14
hFE 35 – –
VCE = 10 V, IC = 1 mA hFE 50 – –
VCE = 10 V, IC = 10 mA hFE 75 – –
VCE = 10 V, IC = 150 mA hFE 100 – 300
VCE = 1 V, IC = 150 mA hFE 50 – –
VCE = 10 V, IC = 500 mA BSR 13 hFE 30 – –
BSR 14 hFE 40 – –
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
IC = 150 mA, IB = 15 mA BSR 13 VCEsat – – 400 mV
BSR 14 VCEsat – – 300 mV
IC = 500 mA, IB = 50 mA BSR 13 VCEsat – – 1.6 V
BSR 14 VCEsat – – 1 V
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 150 mA, IB = 15 mA BSR 13 VBEsat – – 1.3 V
BSR 14 VBEsat 0.6 V – 1.2 V
IC = 500 mA, IB = 50 mA BSR 13 VBEsat – – 2.6 V
BSR 14 VBEsat – – 2 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 20 mA,
f = 100 MHz
BSR 13 fT250 MHz – –
BSR 14 fT300 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE = ie = 0, f = 1 MHz CCB0 – 8 pF –
Switching times – Schaltzeiten
turn-on time
ICon = 150 mA
IBon = 15 mA
- IBoff = 15 mA
ton – – 35 ns
delay time td– – 15 ns
rise time tr– – 20 ns
turn-off time toff – – 250 ns
storage time ts– – 200 ns
fall time tf– – 60 ns
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BSR 15, BSR 16
Marking - Stempelung BSR 13 = U7 BSR 14 = U8
