Symbol Parameter Max. Units
VDS Drain-Source Voltage 100 V
VGS Gate-to-Source Voltage ± 20
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 31
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 22 A
IDM Pulsed Drain Current125
PD @TC = 25°C Maximum Power Dissipation 110 W
PD @TA = 25°C Maximum Power Dissipation 3.0
Linear Derating Factor 0.7 1 mW°C
dv/dt Peak Diode Recovery dv/dt 15 V/ns
TJOperating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
www.irf.com 112/03/04
IRFR3410PbF
IRFU3410PbF
HEXFET® Power MOSFET
VDSS RDS(on) max ID
100V 39mΩ31A
Notes through are on page 10
D-Pak
IRFR3410 I-Pak
IRFU3410
PD - 95514A
lHigh frequency DC-DC converters
lLead-Free
Benefits
Applications
lLow Gate-to-Drain Charge to Reduce
Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
lFully Characterized Avalanche Voltage
and Current
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4
RθJA Junction-to-Ambient (PCB mount)* –– – 40 °C/W
RθJA Junction-to-Ambient ––– 110
Thermal Resistance
Absolute Maximum Ratings
IRFR/U3410PbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 33 ––– ––– S VDS = 25V, ID = 18A
QgTotal Gate Charge –– – 3 7 5 6 ID = 18A
Qgs Gate-to-Source Charge ––– 10 ––– nC VDS = 50V
Qgd Gate-to-Drain ("Miller") Charge ––– 11 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 12 ––– VDD = 50V
trRise Time ––– 27 ––– ID = 18A
td(off) Turn-Off Delay Time ––– 40 ––– RG = 9.1Ω
tfFall Time ––– 13 ––– VGS = 10V
Ciss Input Capacitance ––– 1690 ––– VGS = 0V
Coss Output Capacitance ––– 220 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 26 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 1640 ––– VGS = 0V, V DS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 130 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 250 ––– VGS = 0V, VDS = 0V to 80V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 140 mJ
IAR Avalanche Current––– 18 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– – –– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V
trr Reverse Recovery Time ––– 84 ––– n s TJ = 25°C, IF = 18A
Qrr Reverse RecoveryCharge ––– 260 ––– nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Diode Characteristics
31
125
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 – –– – –– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 34 39 m ΩVGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 2 00 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current
IRFR/U3410PbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1 110 100
VDS, Drain- to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
Tj = 25°C
0.1 110 100
VDS, Drain- to-Source Voltage (V)
1
10
100
ID, Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.0 5.0 6.0 7.0 8.0 9.0
VGS, Gate-t o-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (Α)
TJ = 25°C
TJ = 175°C
VDS = 50V
20µs P ULSE WI DTH
-60 -40 -20 020 40 60 80 100 120 140 160 180
TJ , Junction Tem perature (°C)
0.0
1.0
2.0
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID = 30A
VGS = 10V
IRFR/U3410PbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
110 100
VDS, Drain-to-S ource Vol t age (V)
10
100
1000
10000
100000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + C
gd, Cds SHORT ED
Cr ss = C
gd
Coss = C
ds + C
gd
0 102030405060
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 18A
0.0 0.5 1.0 1.5 2.0
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSo urce Voltage (V)
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Puls e
1msec
10msec
OPE RATION IN THIS ARE A
LIMITE D BY RDS(on)
100µsec
IRFR/U3410PbF
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
VGS
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150 175
TC , Case Tem perature (°C)
0
4
8
12
16
20
24
28
32
ID , Drain Current (A)
LI MITED BY PACKAGE
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
IRFR/U3410PbF
6www.irf.com
QG
QGS QGD
V
G
Charge
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
25 50 75 100 125 150 175
Starting TJ, Junction Tem perature (°C)
0
50
100
150
200
250
EAS, Single Pulse Avalanche Energy (mJ)
ID
TOP 7.3A
13A
BOTTOM 18A
IRFR/U3410PbF
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RG
VDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRFR/U3410PbF
8www.irf.com
D-Pak (TO-252AA) Part Marking Information
D-Pak (TO-252AA) Package Outline
12
IN THE ASSE MBL Y LINE "A"
ASSEMBLED ON WW 16, 1999
EXAMPLE: WI TH ASSEMBL Y
THIS IS AN IRFR120
LOT CODE 1234 YEAR 9 = 199
9
DATE CODE
WEEK 1 6
PART NUMBER
LOGO
INTERNATIONAL
RECTIFIER
ASSEMBLY
LOT CODE
916A
IRFU120
34
YEAR 9 = 1999
DATE CODE
OR
P = DE S IGNAT ES L EAD-FRE E
PROD UCT (OPTIONAL)
Note: "P" in assem bly line p o sitio n
indicates "Lead-Free"
12 34
WE EK 16
A = AS S EMBLY S IT E CODE
PART NUMBER
IRFU120
LINE A
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
IRFR/U3410PbF
www.irf.com 9
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
AS S EMBLY
EXAMPLE: WITH ASSEMBLY
THIS IS AN IRF U120
YEAR 9 = 199
9
DATE CODE
LINE A
WEEK 19
I N THE ASSEMBLY LINE "A"
ASSEMBLED O N WW 19, 1999
LOT C ODE 5678
PART NUM BER
56
IRFU120
INTERNATIONAL
LOGO
RECTIFIER
LOT CODE
919A
78
Note: "P" in assem bly line
pos ition indicates " Lead-Free"
OR
56 78
AS S EMBLY
LOT CODE
RECTIFIER
LOGO
INTERNATIONAL
IRFU120
PART NUMBE R
WEEK 19
DATE C ODE
YEAR 9 = 1999
A = ASSEMBLY S IT E CODE
P = DESIGNATES LEAD-FRE E
PRODUC T (OPTIONAL)
IRFR/U3410PbF
10 www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
ISD ≤ 18A, di/dt ≤ 360A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Notes:
Starting TJ = 25°C, L = 0.85mH
RG = 25Ω, IAS = 18A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A.
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 ) FEED DIRECTION FEED DIRE CTION
16.3 ( .641
)
15.7 ( .619
)
TRR TRL
N
OTES :
1
. CONTROLLIN G DIMENSION : MILLIMETER.
2
. ALL D IMENS IONS ARE SHOWN IN MILLIMET ERS ( INC H ES ).
3
. OUTLINE CONFO RMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/