IGBT
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecovery
anti-paralleldiode
IKW25N120H3
1200Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
2
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features:
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKW25N120H3 1200V 25A 2.05V 175°C K25H1203 PG-TO247-3
3
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
4
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC50.0
25.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 100.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 100.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF25.0
12.5
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 100.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
10
µs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot 326.0
156.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.Value Unit
Characteristic
IGBT thermal resistance,
junction - case Rth(j-c) 0.46 K/W
Diode thermal resistance,
junction - case Rth(j-c) 1.49 K/W
Thermal resistance
junction - ambient Rth(j-a) 40 K/W
5
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=25.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
2.05
2.50
2.70
2.40
-
-
V
Diode forward voltage VF
VGE=0V,IF=12.5A
Tvj=25°C
Tvj=175°C
-
-
1.80
1.85
2.35
-
V
Diode forward voltage VF
VGE=0V,IF=25.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
2.40
2.60
2.60
3.05
-
-
V
Gate-emitter threshold voltage VGE(th) IC=0.85mA,VCE=VGE 5.0 5.8 6.5 V
Zero gate voltage collector current ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
-
250.0
2500.0
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=25.0A - 13.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 1430 -
Output capacitance Coes - 115 -
Reverse transfer capacitance Cres - 75 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=25.0A,
VGE=15V - 115.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
IC(SC)
VGE=15.0V,VCC≤600V,
tSC≤10µs
Tvj=175°C
-87 - A
6
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 27 - ns
Rise time tr- 41 - ns
Turn-off delay time td(off) - 277 - ns
Fall time tf- 17 - ns
Turn-on energy Eon - 1.80 - mJ
Turn-off energy Eoff - 0.85 - mJ
Total switching energy Ets - 2.65 - mJ
Tvj=25°C,
VCC=600V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=80nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 290 - ns
Diode reverse recovery charge Qrr - 1.20 - µC
Diode peak reverse recovery current Irrm - 10.4 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -150 - A/µs
Tvj=25°C,
VR=600V,
IF=25.0A,
diF/dt=500A/µs
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 26 - ns
Rise time tr- 35 - ns
Turn-off delay time td(off) - 347 - ns
Fall time tf- 50 - ns
Turn-on energy Eon - 2.60 - mJ
Turn-off energy Eoff - 1.70 - mJ
Total switching energy Ets - 4.30 - mJ
Tvj=175°C,
VCC=600V,IC=25.0A,
VGE=0.0/15.0V,
RG(on)=23.0Ω,RG(off)=23.0Ω,
Lσ=80nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 505 - ns
Diode reverse recovery charge Qrr - 2.75 - µC
Diode peak reverse recovery current Irrm - 12.8 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -85 - A/µs
Tvj=175°C,
VR=600V,
IF=25.0A,
diF/dt=500A/µs
7
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,
rG=23Ω)
f,SWITCHINGFREQUENCY[kHz]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100
110
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tj≤175°C;VGE=15V)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
0.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj≤175°C)
TC,CASETEMPERATURE[°C]
Ptot,POWERDISSIPATION[W]
25 50 75 100 125 150 175
0
50
100
150
200
250
300
350
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tj≤175°C)
TC,CASETEMPERATURE[°C]
IC,COLLECTORCURRENT[A]
25 50 75 100 125 150 175
0
10
20
30
40
50
8
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 5. Typicaloutputcharacteristic
(Tj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0246
0
20
40
60
80
100
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typicaloutputcharacteristic
(Tj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0 2 4 6 8
0
20
40
60
80
100
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
5 10 15
0
15
30
45
60
75
Tj=25°C
Tj=175°C
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tj,JUNCTIONTEMPERATURE[°C]
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC=12.5A
IC=25A
IC=50A
9
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=23Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
5 15 25 35 45
10
100
1000
td(off)
tf
td(on)
tr
Figure 10. Typicalswitchingtimesasafunctionofgate
resistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=25A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
5 15 25 35 45 55 65
10
100
1000
td(off)
tf
td(on)
tr
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(ind.load,VCE=600V,VGE=15/0V,IC=25A,
rG=23Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
0 25 50 75 100 125 150 175
10
100
1000
td(off)
tf
td(on)
tr
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.85mA)
Tj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
0 25 50 75 100 125 150 175
2
3
4
5
6
7
typ.
min.
max.
10
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
rG=23Ω,testcircuitinFig.E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45
0
2
4
6
8
10
12
Eoff
Eon
Ets
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistor
(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,
IC=25A,testcircuitinFig.E)
rG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
5 15 25 35 45 55 65
0
1
2
3
4
5
6
7
Eoff
Eon
Ets
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(indload,VCE=600V,VGE=15/0V,IC=25A,
rG=23Ω,testcircuitinFig.E)
Tj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
0 25 50 75 100 125 150 175
0
1
2
3
4
Eoff
Eon
Ets
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(ind.load,Tj=175°C,VGE=15/0V,IC=25A,
rG=23Ω,testcircuitinFig.E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 500 600 700 800
0
1
2
3
4
5
6
Eoff
Eon
Ets
11
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 17. Typicalgatecharge
(IC=25A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100 120
0
2
4
6
8
10
12
14
16
240V
960V
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 10 20 30
10
100
1000
Cies
Coes
Cres
Figure 19. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤600V,startatTj=25°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
10 12 14 16 18
20
40
60
80
100
120
140
160
180
Figure 20. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤600V,startatTj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
10 12 14 16 18 20
0
10
20
30
40
50
12
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 21. IGBTtransientthermalimpedance
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.08133
2.6E-4
2
0.09366
1.7E-3
3
0.22305
0.01009673
4
0.05925
0.0336145
5
5.7E-3
0.2730749
Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.3921
2.5E-4
2
0.5592
1.6E-3
3
0.4557
9.0E-3
4
0.077415
0.03875911
5
9.0E-3
0.2738223
Figure 23. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
200 400 600 800 1000 1200 1400 1600
200
300
400
500
600
700
Tj=25°C, IF = 25A
Tj=175°C, IF = 25A
Figure 24. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
200 600 1000 1400 1800
0
1
2
3
Tj=25°C, IF = 25A
Tj=175°C, IF = 25A
13
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
Figure 25. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
200 600 1000 1400 1800
4
6
8
10
12
14
16
18
Tj=25°C, IF = 25A
Tj=175°C, IF = 25A
Figure 26. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
200 600 1000 1400 1800
-400
-300
-200
-100
0
Tj=25°C, IF = 25A
Tj=175°C, IF = 25A
Figure 27. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
012345
0
20
40
60
80
100
120
Tj=25°C
Tj=175°C
Figure 28. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IF=6.25A
IF=12.5A
IF=25A
14
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
PG-TO247-3
15
IKW25N120H3
Highspeedswitchingseriesthirdgeneration
Rev.2.1,2014-12-01
t
a
a
b
b
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
vGE(t)
t
t
IC(t)
vCE(t)
90% VGE
vGE(t)
t
t
vCE(t)
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
Et
tV I t
off = x x d
1
2
CE C
Et
tV I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
IC(t)
Parasitic inductance L ,
parasitic capacitor L ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
16
IKW25N120H3
High speed switching series third generation
Rev. 2.1, 2014-12-01
Revision History
IKW25N120H3
Revision: 2014-12-01, Rev. 2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-11-27 -
1.2 2010-02-10 -
2.1 2014-12-01 Final data sheet
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