TECHNICAL DATA
PNP HIGH VOLTAGE SILICON TRANSISTOR
Qualified per MIL-PRF-19500/397
Devices Qualified Level
2N3743 2N4930 2N4931
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings Sym 2N3743
2N4930
2N4931
Unit
Collector-Emitter Voltage VCEO 300 200 250 Vdc
Collector-Base Voltage VCBO 300 200 250 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 200 mAdc
Total Power Dissipation @TA = +250C 1
@TC = +250C 2 PT 1.0
5.0 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance Junction-to-Case RθJC 35 0C/W
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 28.6 mW/0C for TC > +250C
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 1.0 mAdc 2N3743
2N4930
2N4931
V(BR)CEO
300
200
250
Vdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc 2N3743
2N4930
2N4931
V(BR)CBO
300
200
250
Vdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc V(BR)EBO 5.0 Vdc
Collector-Base Cutoff Current
VCB = 250 Vdc 2N3743
VCB = 150 Vdc 2N4930
VCB = 200 Vdc 2N4931
ICBO
250
250
250 ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3743, 2N4930, 2N4931, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
Emitter-Base Cutoff Current
VEB = 4.0 Vdc IEBO 150 ηAdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1 mAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 30 mAdc, VCE = 10 Vdc
IC = 50 mAdc, VCE = 20 Vdc
hFE
30
40
40
50
30
200
Collector-Emitter Saturation Voltage
IC = 30 mAdc, IB = 3.0 mAdc
IC = 10 mAdc, IB = 1.0 mAdc VCE(sat)
1.2
1.0 Vdc
Base-Emitter Saturation Voltage
IC = 10 mAdc, IB = 1.0 mAdc
IC = 30 mAdc, IB = 3.0 mAdc VBE(sat)
1.0
1.2 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz hfe 2.0 8.0
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz hfe 30 300
Output Capacitance
VCB = 20 Vdc, IE = 0, f ≥ 0.1 MHz Cobo 15 pF
Input Capacitance
VEB = 1.0 Vdc, IC = 0, f ≥ 0.1 MHz Cibo 400 pF
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t ≥ 1.0 s
Test 1
VCE = 20 Vdc, IC = 50 mAdc All Types
Test 2
VCE = 100 Vdc, IC = 10 mAdc All Types
Test 3
VCE = 300 Vdc, IC = 3.3 mAdc 2N3743
VCE = 200 Vdc, IC = 5.0 mAdc 2N4930
VCE = 250 Vdc, IC = 4.0 mAdc 2N4931
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
