Semiconductor Group 1 Mar-04-1996
BAT 68-03W
Silicon Schottky Diode
Preliminary data
• For mixer applications in the VHF/UHF range
• For high speed switching
Type Marking Ordering Code Pin Configuration Package
BAT 68-03WK Q62702- 1 = A 2 = K SOD-323
Maximum Ratings
Parameter Symbol Values Unit
Diode reverse voltage
V
R 8 V
Forward current
I
F 130 mA
Total Power dissipation
T
S = 95 °C
P
tot 150 mW
Junction temperature
T
j 150 °C
Operating temperature range
T
op - 65 ... + 150
Storage temperature
T
stg - 65 ... + 150
Thermal Resistance
Junction ambient 1)
R
thJA 445 K/W
Junction - soldering point
R
thJS 365
Q62702-A1046
Semiconductor Group 2 Mar-04-1996
BAT 68-03W
Electrical Characteristics at
T
A=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I
(BR) = 10 µA
V
(BR) 8 - - V
Reverse current
V
R = 1 V,
T
A = 25 °C
V
R = 1 V,
T
A = 60 °C
I
R
-
--
- 1.2
0.1 µA
Forward voltage
I
F = 1 mA
I
F = 10 mA
V
F
340
- 390
318 500
340 mV
Diode capacitance
V
R = 0 ,
f
= 1 MHz
C
T- - 1 pF
Differential forward resistance
I
F = 5 mA
R
F- - 10 Ω
Forward current
I
F =
f
(
T
A*;
T
S)
*): mounted on alumina 15mm x 16.7mm x 0.7mm
020 40 60 80 100 120 °C 150
T
A
,T
S
0
20
40
60
80
100
120
140
160
mA
200
I
F
T
S
T
A
Semiconductor Group 3 Mar-04-1996
BAT 68-03W
Permissible Pulse Load
R
THJS =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load
I
Fmax/
I
FDC =
f
(
t
p)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
0
10
1
10
2
10
-
I
Fmax/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Forward Current
I
F =
f
(
V
F)Reverse current
I
R =
f
(
T
A)
Semiconductor Group 4 Mar-04-1996
BAT 68-03W
Diode capacitance
C
T =
f
(
V
R)
f
= 1MHz Differential forward resistance
r
f =
f
(
I
F)
f
= 10kHz
Semiconductor Group 5 Mar-04-1996
BAT 68-03W
Package
