7MBR10SA120 IGBT Modules IGBT MODULE (S series) 1200V / 10A / PIM Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Inverter Collector-Emitter voltage Gate-Emitter voltage Collector current Brake t No -IC PC VCES VGES IC o c e r Collector power dissipation Repetitive peak reverse voltage Repetitive peak reverse voltage Average output current Surge current (Non-Repetitive) I 2t (Non-Repetitive) Operating junction temperature Storage temperature Isolation between terminal and copper base *2 voltage between thermistor and others *3 Mounting screw torque de Rat ing 1200 20 15 10 30 20 10 75 1200 20 15 10 30 20 75 1200 1600 10 105 55 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous Tc=25C Tc=80C Tc=25C Tc=80C nd e mm ICP Collector power dissipation Collector-Emitter voltage Gate-Emitter voltage Collector current Converter VCES VGES IC Condition 1ms 1 device Continuous ICP 1ms PC VRRM VRRM IO IFSM I2 t Tj Tstg Viso 1 device Tc=25C Tc=80C Tc=25C Tc=80C 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V N*m 7MBR10SA120 IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.2 8.5 2.1 2.15 2.6 1200 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Thermistor Converter Turn-off time VCE=1200V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=10mA VGE=15V, Ic=10A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=600V IC=10A VGE=15V RG=120 IF=10A chip terminal IF=10A VCES=1200V, VGE=0V VCE=0V, VGE=20V IC=10A, VGE=15V chip terminal VCC=600V IC=10A VGE=15V RG=120 VR=1200V IF=10A chip terminal VR=1600V T=25C T=100C T=25/50C for ot Thermal resistance ( 1 device ) Contact thermal resistance N o c e r Rth(j-c) * Rth(c-f) V 3.2 0.35 1.0 0.2 Condition Min. 2.6 1.2 0.6 1.0 0.3 1.0 n. sig 465 3305 1.5 1.0 520 3450 Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound 1.67 2.78 1.67 1.85 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [In v er ter ] [T h e rm is to r] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 9 (E u ) 7 (B ) 1 4 (G b) 1 7 (E v ) 4 (U ) 1 3 (G x) 1 6 (G w ) 1 8 (G v) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) http://store.iiic.cc/ pF s 1.0 0.3 1.1 1.2 5000 495 3375 w ne nd e mm Symbol 1.2 0.6 2.1 2.2 0.35 0.25 0.45 0.08 de Thermal resistance Characteristics Item 0.35 0.25 0.1 0.45 0.08 2.3 2.35 mA A V V 9 s mA A V s mA V mA K Unit C/W 7MBR10SA120 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 25 15V 15V VGE= 20V VGE= 20V 12V 12V 20 Collector current : Ic [ A ] 20 Collector current : Ic [ A ] Tj= 125 C (typ.) 25 15 10V 10 5 15 10V 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 5 o o Tj= 25 C Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] 20 15 n sig ew n for 10 e m m . de 6 4 Ic= 20A nd 5 0 0 1 2 eco 3 4 5 10 r 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) o Vcc=600V, Ic=10A, Tj= 25 C o Collector - Emitter voltage : VCE [ V ] VGE=0V, f= 1MHz, Tj= 25 C 5000 Ic= 5A 0 5 Collector - Emitter voltage : VCE [ V ] t No Ic= 10A 2 Cies 1000 500 1000 25 800 20 600 15 400 10 200 5 100 Coes Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 20 40 60 Gate charge : Qg [ nC ] http://store.iiic.cc/ 80 0 100 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 4 Tj= 25 C (typ.) 10 o 3 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 25 Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] 7MBR10SA120 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) [ Inverter ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120, Tj=25C Vcc=600V, VGE=15V, Rg=120, Tj=125C 1000 1000 500 500 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] toff toff ton tr 100 ton tr tf 100 tf 50 50 0 5 10 15 20 0 5 10 Collector current : Ic [ A ] 15 20 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=600V, VGE=15V, Rg=120 Vcc=600V, Ic=10A, VGE=15V, Tj=25C 5000 3 ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] tr 1000 500 tf 50 50 100 o c e r 500 Gate resistance : Rg [ t No 1000 o Eon(125 C) 1 w ne o Eon(25 C) o Eoff(125 C) o Eoff(25 C) o Err(125 C) o 0 0 5 10 ] 15 20 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE=<15V, Rg>120, Tj<125C = = Vcc=600V, Ic=10A, VGE=15V, Tj=125C 25 Eon n sig Err(25 C) 2000 8 . de 2 for nd e mm 100 20 6 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] toff 4 15 10 2 Eoff 5 Err 0 0 50 100 500 Gate resistance : Rg [ 1000 2000 ] 0 200 400 600 800 1000 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 1200 1400 IGBT Modules 7MBR10SA120 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=600V, VGE=15V, Rg=120 [ Inverter ] Forward current vs. Forward on voltage (typ.) 300 25 o o trr(125 C) o Tj=125 C Tj=25 C 100 20 Reverse recovery current : Irr [ A ] 15 10 5 Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] o 0 trr(25 C) 50 o Irr(125 C) 10 o Irr(25 C) 1 0 1 2 3 4 0 5 Forward on voltage : VF [ V ] 10 15 20 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 25 o Tj= 25 C o Tj= 125 C Forward current : IF [ A ] 20 n sig ew n for 10 5 0 0.0 . de 15 0.4 0.8 nd e mm eco 1.2 1.6 2.0 r Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 10 100 Conv. Diode o Thermal resistanse : Rth(j-c) [ C/W ] FWD[Inverter] 1 Resistance : R [ k ] IGBT [Inverter,Brake] 10 1 0.1 0.1 0.001 0.01 0.1 1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 Temperature [ http://store.iiic.cc/ 80 o C] 100 120 140 160 180 7MBR10SA120 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 25 15V 12V VGE= 20V VGE= 20V 15V 12V 20 Collector current : Ic [ A ] 20 Collector current : Ic [ A ] Tj= 125 C (typ.) 25 15 10V 10 5 15 10V 10 5 8V 8V 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 5 o o Tj= 25 C Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ] 20 15 n sig ew n for 10 e m m . de 6 4 Ic= 20A Ic= 10A nd 5 0 0 1 2 eco 3 4 2 0 5 5 10 r Collector - Emitter voltage : VCE [ V ] t No Ic= 5A 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) o Vcc=600V, Ic=10A, Tj= 25 C o VGE=0V, f= 1MHz, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 5000 Cies 1000 500 1000 25 800 20 600 15 400 10 200 5 100 Coes Cres 50 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 20 40 60 Gate charge : Qg [ nC ] http://store.iiic.cc/ 80 0 100 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 4 Tj= 25 C (typ.) 10 o 3 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage 25 Capacitance : Cies, Coes, Cres [ pF ] 2 Collector - Emitter voltage : VCE [ V ] IGBT Modules 7MBR10SA120 Outline Drawings, mm de ew n for nd e mm t No o c e r http://store.iiic.cc/ . n sig