IRANSYS FLECTRONICS LIMITED 40 W at 25C Case Temperature 1 A Continuous Collector Current 2 A Peak Collector Current 20 mJ Reverse-Energy Rating TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW) O Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP47 350 TIP48 400 Collector-base voltage (Ip = 0) TIP49 Vecso yom Vv TIP50 500 TIP47 250 Collector-emitter voltage (lp = 0) TIP48 VcEo 300 Vv TIP49 350 TIP50 400 Emitter-base voltage VEBo 5 Vv Continuous collector current lo A Peak collector current (see Note 1) lom 2 A Continuous base current lB 0.6 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 40 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 2 WwW Unclamped inductive load energy (see Note 4) VYoLIo? 20 mJ Operating junction temperature range Tj -65 to +150 C Storage temperature range Tstg -65 to +150 C Lead temperature 3.2 mm from case for 10 seconds TL 260 C NOTE : This value applies for t, < 1 ms, duty cycle < 2%. . Derate linearly to 150C case temperature at the rate of 0.32 W/C. 1 2 3. Derate linearly to 150C free air temperature at the rate of 16 MW/C. 4 . This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, Ipyony = 0-4 A, Ree = 100 , VBE(ott) =0, Rs = 0.1 Q, Voc =20V.TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT TIP47 250 Vv Collector-emitter [= 30mA le =0 TIP48 300 Vv (BR)CEO breakdown voltage om Be TIP49 350 (see Note 5) TIP50 400 Voce = 350 V Vee = 0 TIP47 1 Collector-emitter Voge = 400 V Veg = 0 TIP48 1 lcEs mA cut-off current Voge = 450 V Veg = 0 TIP49 1 Voge = 500 V Veg =0 TIP50 1 Voge = 150 V Ip =O TIP47 1 Collector cut-off Veg = 200 V lp =O TIP48 1 IcEo mA current Veg = 250 V lp =O TIP49 1 Voge = 300 V Ip =O TIP50 1 | Emitter cut-off Vea= 5V | 0 : mA FBO current EB~ a Forward current Vep= 10V Ic =O0.3A 30 150 Nee . (see Notes 5 and 6) transfer ratio Vep= 10V Ilc= 1A 10 v Collectoremitter Ip= 0.2 A Ip= 1A (see Notes 5 and 6) 1 V CE(sat) saturation voltage Be , ce Vee soemnitter Voe= 10V Ip= 1A (see Notes 5 and 6) 15 |v BE voltage cee ce Small signal forward Ne . Vee = 10V Io= 0.2A f= 1 kHz 25 current transfer ratio Small signal forward [Niel . Vege = 10V Ic =O0.2A f = 2 MHz 5 current transfer ratio NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS t MIN | TYP | MAX | UNIT ton Turn on time lo =1A IByon) =0.1A IBvoft) =-0.1A 0.2 Us tott Turn off time VBE(ott) =-5 V R, = 200 Q (see Figures 1 and 2) 2 us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V ms680 [LF | [- T >| . 100 2 Vv 1 100 .F Voc | tp I TUT mes680 LF ty = 20 us Duty cycle = 1% | V, = 15 V, Source Impedance = 50 Figure 1. Resistive-Load Switching Test Circuit 0% -C=ton - F = tote Ur uouMmo Yr m ll a dig Ta 22 A/us 'B(on) 0% lB (off) Figure 2. Resistive-Load Switching WaveformsTIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE VS VS COLLECTOR CURRENT COLLECTOR CURRENT 50 0:3 Vog = 10 V > Io/lg=5 Ty =25C 1 To =25C t, = 300 us, duty cycle < 2% & | t, = 300 us, duty cycle < 2% 40 = & Let 3 & Ler \ 5 / S \ e a % \ z VA OQ \ e , A 2 fo 5 \| = 7 ao 20 wi e Ss 0-1 t 2 pe oO 10 se 0 0 0.01 0.1 1 0-01 0-1 1 |, - Collector Current - A |, - Collector Current - A Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 1.0 Voe = 10 V > 0.9 LT. = 25C t, = 300 us, duty cycle < 2% 2 08 Co 3 eal = 07 c S ae 3 _ L 0.6 5 & L 0.5 v2 & 0.4 o & 0.3 on g 02 in ao > O04 0.0 0-01 0-1 1-0 |, - Collector Current - A Figure 5.|, - Collector Current - A TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 0.1 0-01 1-0 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t, = 100 ps t, = 500 ps t,= 1ms TIP49 DC Operation TIP50 TIP47 TIP48 10 100 1000 Vog - Collector-Emitter Voltage - V Figure 6.TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. T0220 470 4,20 3,96 < > 1,32 9371 2,95 123 L 2,54 see Note B 6,6 __. CD 4 60 15,90 14,55 see Note C _ 64 3,5 S vy ____ v Kl 14,1 1,70 12,7 0,97 1,07 0,61 @) (2) @) i u 2,74 0,64 2,34 0,41 5,28 2,90 4,88 2,40 VERSION 1 : VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm.