MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1
April 2009
MOCD213M
Dual Channel Phototransistor Small Outline
Surface Mount Optocouplers
Features
■
U.L. recognized (File #E90700, Volume 2)
■
VDE recognized (File #136616) (add option “V” for
VDE approval, i.e, MOCD213VM)
■
Dual channel coupler
■
Convenient plastic SOIC-8 surface mountable
package style
■
Minimum current transfer ratio 100% with input current
of 10mA
■
Minimum BV
CEO
of 70 Volts guaranteed
■
Standard SOIC-8 footprint, with 0.050" lead spacing
■
Compatible with dual wave, vapor phase and
IR reflow soldering
■
High input-output isolation of 2500 V
AC(rms)
guaranteed
Applications
■
Feedback control circuits
■
Interfacing and coupling systems of different
potentials and impedances
■
General purpose switching circuits
■
Monitor and detection circuits
Description
The MOCD213M device consists of two gallium arsenide
infrared emitting diodes optically coupled to two mono-
lithic silicon phototransistor detectors, in a surface
mountable, small outline plastic package. It is ideally
suited for high density applications and eliminates the
need for through-the-board mounting.
Schematic
EMITTER 1
COLLECTOR 1
ANODE 1
CATHODE 1
1
2
3
45
6
7
8
EMITTER 2
COLLECTOR 2
ANODE 2
CATHODE 2
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 2
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Rating Value Unit
EMITTER
I
F
Forward Current – Continuous 60 mA
I
F
(pk) Forward Current – Peak (PW = 100µs, 120 pps) 1.0 A
V
R
Reverse Voltage 6.0 V
P
D
LED Power Dissipation @ T
A
= 25°C
Derate above 25°C
90
0.8
mW
mW/°C
DETECTOR
V
CEO
Collector-Emitter Voltage 70 V
V
ECO
Emitter-Base Voltage 7.0 V
I
C
Collector Current-Continuous 150 mA
P
D
Detector Power Dissipation @ T
A
= 25°C
Derate above 25°C
150
1.76
mW
mW/°C
TOTAL DEVICE
V
ISO
Input-Output Isolation Voltage (f = 60Hz, t = 1 min.) 2500 Vac(rms)
P
D
Total Device Power Dissipation @ T
A
= 25°C
Derate above 25°C
250
2.94
mW
mW/°C
T
A
Ambient Operating Temperature Range -40 to +100 °C
T
stg
Storage Temperature Range -40 to +150 °C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 3
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Electrical Characteristics
(T
A
= 25°C unless otherwise specified)
*Typical values at T
A
= 25°C
Notes:
1. Input-Output Isolation Voltage, V
ISO
, is an internal device dielectric breakdown rating.
2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common.
3. V
ISO
rating of 2500 V
AC(rms)
for t = 1 min. is equivalent to a rating of 3,000 V
AC(rms)
for t = 1 sec.
4. Current Transfer Ratio (CTR) = I
C
/I
F
x 100%.
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
EMITTER
V
F
Input Forward Voltage I
F
= 30mA 1.25 1.55 V
I
R
Reverse Leakage Current V
R
= 6.0V 0.001 100 µA
CCapacitance 18 pF
DETECTOR
I
CEO1
Collector-Emitter Dark Current V
CE
= 10 V, T
A
= 25°C 1.0 50 nA
I
CEO2
V
CE
= 10 V, T
A
= 100°C 1.0 µA
BV
CEO
Collector-Emitter Breakdown
Voltage
I
C
= 100µA 70 120 V
BV
ECO
Emitter-Collector Breakdown
Voltage
I
E
= 100µA 7.0 7.8 V
C
CE
Collector-Emitter Capacitance f = 1.0MHz, V
CE
= 0V 7.0 pF
COUPLED
CTR Current Transfer Ratio
(4)
I
F
= 10mA, V
CE
= 10V 100 %
V
CE (sat)
Collector-Emitter Saturation
Voltage
I
C
= 2.0mA, I
F
= 10mA 0.15 0.4 V
t
on
Tu r n-On Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
(Fig. 6)
3.0 µs
t
off
Tu r n-Off Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
(Fig. 6)
2.8 µs
t
r
Rise Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
(Fig. 6)
1.6 µs
t
f
Fall Time I
C
= 2.0mA, V
CC
= 10V, R
L
= 100
Ω
(Fig. 6)
2.2 µs
V
ISO
Isolation Surge Voltage
(1)(2)(3)
f = 60Hz, t = 1 min. 2500 Vac(rms)
R
ISO
Isolation Resistance
(2)
V
I-O
= 500V 10
11
Ω
C
ISO
Isolation Capacitance
(2)
V
I-O
= 0V, f = 1MHz 0.2 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 4
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Typical Performance Curves
Fig. 2 Output Curent vs. Input Current
I
F
- LED INPUT CURRENT (mA)
0.1 1 10 100
I
C
– OUTPUT COLLECTOR CURRENT ( NORMALIZED)
0.01
0.1
1
10
VCE = 5V
NORMALIZED TO IF = 10 mA
Fig. 3 Output Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (
o
C)
-80 -60 -40 -20 0 20406080100120
I
C
– OUTPUT COLLECTOR CURRENT (NOR MALIZED)
0.1
1
10
NORMALIZED TO T
A
= 25
o
C
Fig. 4 Output Current vs. Collector - Emitter Voltage
V
CE
– COLLECTOR-EMITTER VOLTAGE (V)
012345678910
I
C
– OUTPUT COLLECTOR CURRENT (NORMALIZED)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
F
= 10 mA
NORM ALIZED TO V
CE
= 5V
Fig. 5 Dark Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (
o
C)
020406080100
I
CEO
– COLLECTOR -EMITTER DARK CURRENT (nA)
0.1
1
10
100
1000
10000
V
CE
= 10V
IF - LED FORWARD CURRENT (mA)
VF – FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
110100
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
TA = -55°C
TA = 25°C
TA = 100°C
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 5
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
OUTPUT PULSE
INPUT PULSE
TEST CIRCUIT WAVEFORMS
trtf
INPUT
IF RL
VCC = 10V
OUTPUT
Adjust IF to produce IC = 2mA ton
10%
90%
toff
IC
Figure 6. Switching Time Test Circuit and Waveform
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 6
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Package Dimensions
8-pin SOIC Surface Mount
Recommended Pad Layout
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/packaging/
Lead Coplanarity: 0.004 (0.10) MAX
0.202 (5.13)
0.182 (4.63)
0.021 (0.53)
0.011 (0.28)
0.050 (1.27) Typ.
0.164 (4.16)
1
8
0.144 (3.66)
0.244 (6.19)
0.224 (5.69)
0.143 (3.63)
0.123 (3.13)
0.008 (0.20)
0.003 (0.08)
0.010 (0.25)
0.006 (0.16)
SEATING PLANE
0.024 (0.61)
0.050 (1.27)
Dimensions in inches (mm).
0.155 (3.94)
0.275 (6.99)
0.060 (1.52)
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 7
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Ordering Information
Marking Information
Option Order Entry Identifier Description
VVVDE 0884
R2 R2 Tape and reel (2500 units per reel)
R2V R2V VDE 0884, Tape and reel (2500 units per reel)
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code, e.g., ‘8’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
D213
SYYXV
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 8
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Carrier Tape Specifications
4.0 ± 0.10
Ø1.5 MIN
User Direction of Feed
2.0 ± 0.05
1.75 ± 0.10
5.5 ± 0.05
12.0 ± 0.3
8.0 ± 0.10
0.30 MAX
8.3 ± 0.10
3.50 ± 0.20
Dimensions in mm
0.1 MAX 6.40 ± 0.20
5.20 ± 0.20
Ø1.5 ± 0.1
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 9
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
S
) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t
L
to t
P
) 3°C/second max.
Liquidous Temperature (T
L
) 217°C
Time (t
L
) Maintained Above (T
L
) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (t
P
) within 5°C of 260°C 30 seconds
Ramp-down Rate (T
P
to T
L
) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsmax
Tsmin
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
MOCD213M Rev. 1.0.1 10
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Rev. I40
First Production
MOCD213M — Dual Channel Phototransistor Small Outline Surface Mount Optocouplers
