STPR810D thru STPR820D
FEATURES
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
STPR810D
STPR820D
VRRM
V
100
200
VRMS
V
70
140
VDC
V
100
200
A=Anode, C=Cathode, TAB=Cathode
CA
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=120 C
IFSM Non Repetitive Peak Forward Surge Current
Per Diode Sinusoidal (JEDEC METHOD) TP=10ms
TP=8.3ms
Maximum Forward Voltage
Pulse Width=300us
Duty Cycle
IF=8A @TJ=125 C
IF=16A @TJ=125 C
IF=16A @TJ=25 C
VF
IRMaximum DC Reverse Current
at Rated DC Blocking Voltage @TJ=25 C
@TJ=100 C
CJTypical Junction Capacitance (Note 1)
TRR Maximum Reverse Recovery Time (Note 2)
Typical Thermal Resistance
TJ, TSTG Operating and Storage Temperature Range
Maximum Ratings
8.0
80
90
0.99
1.20
1.25
50
600
80
30
3.0
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
o
o
o
ROJC C/W
o
C
o
NOTES: 1. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
C(TAB) CA
Ultra Fast Recovery Diodes
STPR810D thru STPR820D
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60 Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
20
40
60
80
100
120
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AM PERES
50 75 100 125
2
025
8
150
CASE TEMPERATURE , C
8.3ms Single Half -Sine-Wave
(JEDEC METHOD)
6
0
4
RESISTIVE OR INDUCTIVE LOAD
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0.2 0.4 1.2 1.4
1.0
10
100
0.6 0.8 1.0
0.1 1.8
1.6
INSTANTANEOUS FO RWARD VOLTAGE , VOLTS
INSTANTANEOUS FO RWARD CURRENT ,(A)
0
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
10
RATED PEAK REVERSE VOLTAGE (VOLTS)
FIG.3 - TY PICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(uA)
20 140
0
0.01
1.0
10
1000
100
60 100
T
J
= 100 C
0.1
T
J
= 25 C
FIG.5 - TYPICAL JUNCTI ON CAPACIT ANCE
CAPACITAN C E , ( pF)
REVERS E VOLTAGE , VO LTS
10
1100
1000
100
10 0.1
175
T
P
=8.3ms
T
P
=10ms
T
J
= 150 C
T
J
= 125 C
4
T
J
= 25 C, f= 1MHz
Ultra Fast Recovery Diodes
