P6SMB Series
Vishay General Semiconductor
Document Number: 88370
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3
suffix meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g.
P6SMB10CA).
Electrical characteristics apply in both directions.
PRIMARY CHARACTERISTICS
VBR uni-directional 6.8 V to 540 V
VBR bi-directional 6.8 V to 220 V
PPPM 600 W
PD5.0 W
IFSM (uni-directional only) 100 A
TJ max. 150 °C
DO-214AA (SMB)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Peak power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 600 W
Peak pulse current with a 10/1000 µs waveform (1) I
PPM See next table A
Power dissipation on infinite heatsink TA = 50 °C , PD5.0 W
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) I
FSM 100 A
Operating junction and storage temperature range TJ, TSTG - 65 to + 150 °C
P6SMB Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370
Revision: 21-Oct-08
2
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) VF = 3 V at IF = 50 A (uni-directional only)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
GENERAL
SEMICONDUCTOR
PART NUMBER
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAG E
V
BR
AT I
T (1)
(V)
TEST
CURRENT
I
T
(mA)
STAND-OFF
VOLTAGE
V
WM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(3)
(µA)
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM
(2)
(A)
MAXIMUM
CLAMPING
VOLTAG E
AT I
PPM
V
C
(V)
MAXIMUM
TEMP.
COEFFICIENT
OF VBR
(%/°C)
UNI BI
MIN. MAX.
P6SMB6.8A 6V8A 6V8C 6.45 7.14 10 5.80 1000 57.1 10.5 0.057
P6SMB7.5A 7V5A 7V5C 7.13 7.88 10 6.40 500 53.1 11.3 0.061
P6SMB8.2A 8V2A 8V2C 7.79 8.61 10 7.02 200 49.6 12.1 0.065
P6SMB9.1A 9V1A 9V1C 8.65 9.55 1.0 7.78 50 44.8 13.4 0.068
P6SMB10A 10A 10C 9.50 10.5 1.0 8.55 10 41.4 14.5 0.073
P6SMB11A 11A 11C 10.5 11.6 1.0 9.40 5.0 38.5 15.6 0.075
P6SMB12A 12A 12C 11.4 12.6 1.0 10.2 5.0 35.9 16.7 0.078
P6SMB13A 13A 13C 12.4 13.7 1.0 11.1 5.0 33.0 18.2 0.081
P6SMB15A 15A 15C 14.3 15.8 1.0 12.8 1.0 28.3 21.2 0.084
P6SMB16A 16A 16C 15.2 16.8 1.0 13.6 1.0 26.7 22.5 0.086
P6SMB18A 18A 18C 17.1 18.9 1.0 15.3 1.0 23.8 25.2 0.088
P6SMB20A 20A 20C 19.0 21.0 1.0 17.1 1.0 21.7 27.7 0.090
P6SMB22A 22A 22C 20.9 23.1 1.0 18.8 1.0 19.6 30.6 0.092
P6SMB24A 24A 24C 22.8 25.2 1.0 20.5 1.0 18.1 33.2 0.094
P6SMB27A 27A 27C 25.7 28.4 1.0 23.1 1.0 16.0 37.5 0.096
P6SMB30A 30A 30C 28.5 31.5 1.0 25.6 1.0 14.5 41.4 0.097
P6SMB33A 33A 33C 31.4 34.7 1.0 28.2 1.0 13.1 45.7 0.098
P6SMB36A 36A 36C 34.2 37.8 1.0 30.8 1.0 12.0 49.9 0.099
P6SMB39A 39A 39C 37.1 41.0 1.0 33.3 1.0 11.1 53.9 0.100
P6SMB43A 43A 43C 40.9 45.2 1.0 36.8 1.0 10.1 59.3 0.101
P6SMB47A 47A 47C 44.7 49.4 1.0 40.2 1.0 9.3 64.8 0.101
P6SMB51A 51A 51C 48.5 53.6 1.0 43.6 1.0 8.6 70.1 0.102
P6SMB56A 56A 56C 53.2 58.8 1.0 47.8 1.0 7.8 77.0 0.103
P6SMB62A 62A 62C 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104
P6SMB68A 68A 68C 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104
P6SMB75A 75A 75C 71.3 78.8 1.0 64.1 1.0 5.8 103 0.105
P6SMB82A 82A 82C 77.9 86.1 1.0 70.1 1.0 5.3 113 0.105
P6SMB91A 91A 91C 86.5 95.5 1.0 77.8 1.0 4.8 125 0.106
P6SMB100A 100A 100C 95.0 105 1.0 85.5 1.0 4.4 137 0.106
P6SMB110A 110A 110C 105 116 1.0 94.0 1.0 3.9 152 0.107
P6SMB120A 120A 120C 114 126 1.0 102 1.0 3.6 165 0.107
P6SMB130A 130A 130C 124 137 1.0 111 1.0 3.4 179 0.107
P6SMB150A 150A 150C 143 158 1.0 128 1.0 2.9 207 0.108
P6SMB160A 160A 160C 152 168 1.0 136 1.0 2.7 219 0.108
P6SMB170A 170A 170C 162 179 1.0 145 1.0 2.6 234 0.108
P6SMB180A 180A 180C 171 189 1.0 154 1.0 2.4 246 0.108
P6SMB200A 200A 200C 190 210 1.0 171 1.0 2.2 274 0.108
P6SMB220A 220A 220C 209 231 1.0 185 1.0 1.8 328 0.108
P6SMB250A 250A - 237 263 1.0 214 1.0 1.74 344 0.110
P6SMB300A 300A - 285 315 1.0 256 1.0 1.45 414 0.110
P6SMB350A 350A - 333 368 1.0 300 1.0 1.24 482 0.110
P6SMB400A 400A - 380 420 1.0 342 1.0 1.10 548 0.110
P6SMB440A 440A - 418 462 1.0 376 1.0 1.00 602 0.110
P6SMB480A 480A - 456 504 1.0 408 1.0 0.91 658 0.110
P6SMB510A 510A - 485 535 1.0 434 1.0 0.86 698 0.110
P6SMB540A 540A - 513 567 1.0 459 1.0 0.81 740 0.110
P6SMB Series
Vishay General Semiconductor
Document Number: 88370
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VALUE UNIT
Thermal resistance, junction to ambient air (1) R
θJA 100 °C/W
Thermal resistance, junction to leads RθJL 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
P6SMB6.8A-E3/52 0.096 52 750 7" diameter plastic tape and reel
P6SMB6.8A-E3/5B 0.096 5B 3200 13" diameter plastic tape and reel
P6SMB6.8AHE3/52 (1) 0.096 52 750 7" diameter plastic tape and reel
P6SMB6.8AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
100
10
1
0.1
P
PPM
- Peak Pulse Power (kW)
td - Pulse Width (s)
0 255075100
100
75
50
25
0
125 150 175 200
TJ - Initial Temperature (°C)
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
01.0 2.0 3.0 4.0
IPPM - Peak Pulse Current, % IRSM
t - Time (ms)
t
r
= 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
101 100 200
Uni-Directional
Bi-Directional
6000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Measured at
Zero Bias
V
R
, Measured at
Stand-Off Voltage V
WM
C
J
- Junction Capacitance (pF)
V
WM
- Reverse Stand-Off Voltage (V)
P6SMB Series
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88370
Revision: 21-Oct-08
4
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance
0.1
1.0
10
100
0.001 0.01 0.1 1 10 100 1000
t
p
- Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
10
200
100
1100
10
8.3 ms Single Half Sine-Wave
Uni-Directional Only
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
0.220 REF.
DO-214AA (SMB)
Cathode Band
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
0.180 (4.57)
0.160 (4.06)
0.086 (2.20)
0.077 (1.95)
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Revision: 12-Mar-12 1Document Number: 91000
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