© Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 4
1Publication Order Number:
RB751S40T1/D
RB751S40T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high-speed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for hand-held and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage - 0.28 V (Typ) @ IF = 1.0 mAdc
Low Reverse Current
Lead-Free Plating
Pb-Free Package is Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Reverse Voltage VRM 40 V
Reverse Voltage VR30 V
Forward Continuous Current (DC) IF30 mA
Peak Forward Surge Current IFSM 500 mA
ESD Rating: Class 1C per Human Body Model
Class A per Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR-5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD200
1.57
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
RqJA 635 °C/W
Junction and Storage
Temperature Range
TJ, Tstg -55 to +150 °C
1. FR-5 Minimum Pad.
40 V SCHOTTKY
BARRIER DIODE
1
CATHODE
2
ANODE
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SOD-523
CASE 502
PLASTIC
5E = Specific Device Code
M = Date Code
G= Pb-Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
1
2
5E MG
G
12
Device Package Shipping
ORDERING INFORMATION
RB751S40T1 SOD-523 3000/Tape & Reel
RB751S40T1G SOD-523
(Pb-Free)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
RB751S40T1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R 30 - - V
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT- 2.0 2.5 pF
Reverse Leakage
(VR = 30 V)
IR- 300 500 nAdc
Forward Voltage
(IF = 1.0 mAdc)
VF- 0.28 0.37 Vdc
25°C
125°C
85°C
TA = 150°C
0 0.05
VF
, FORWARD VOLTAGE (VOLTS)
0.1
10
1.0
0.1
85°C
10
0
VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
5
0
VR, REVERSE VOLTAGE (VOLTS)
0.5
0
CT, CAPACITANCE (pF)
2.0 4.0
IF, FORWARD CURRENT (mA)
Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse
Voltage
Figure 3. Typical Capacitance
-40°C25°C
IR, REVERSE CURRENT (μA)
-55°C
150°C
125°C
1000
0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10 15 20 25 30 35
1.0
1.5
2.0
2.5
3.0
6.0 8.0 10 12 14 16 18
100
RB751S40T1
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3
PACKAGE DIMENSIONS
SOD-523
CASE 502-01
ISSUE C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
-T-
SEATING
PLANE
B
A
-X-
-Y-
D2 PL
T
M
0.08 (0.003) X Y
C
S
J
K
DIM MIN NOM MAX
MILLIMETERS
A1.10 1.20 1.30
B0.70 0.80 0.90
C0.50 0.60 0.70
D0.25 0.30 0.35
J0.07 0.14 0.20
K0.15 0.20 0.25
S1.50 1.60 1.70
0.043 0.047 0.051
0.028 0.032 0.035
0.020 0.024 0.028
0.010 0.012 0.014
0.0028 0.0055 0.0079
0.006 0.008 0.010
0.059 0.063 0.067
MIN NOM MAX
INCHES
12
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.40
0.0157
0.40
0.0157
1.40
0.0547
ǒmm
inchesǓ
SCALE 10:1
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RB751S40T1/D
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