DO) = D [MOS [S|= > IRF622,623 FIELD EFFECT POWER TRANSISTOR 0, 180 VOLT 200, 150 VOLTS RDS(ON) = 1.22 This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology N-CHANNEL to achieve low on-resistance with excellent device rugged- \ ness and reliability. This design has been optimized to give superior performance G in most switching applications including: switching power s supplies, inverters, converters and solenoid/relay drivers. on CASE STYLE TO-220AB Also, the extended safe operating area with good linear goaiio2s) 8295 somes transfer characteristics makes it well suited for many linear Seote es) ee Trae allo SEBS applications such as audio amplifiers and servo motors. venaa| Features 2 |t + | teucbarune Polysilicon gate !mproved stability and reliability use + g5ie.00 =a e No secondary breakdown Excellent ruggedness | b ; tt + .130(3.3) 7 be spe s * Ultra-fast switching Independent of temperature Al i | os TERM . Voltage controlled High transconductance rena in e Low input capacitance Reduced drive requirement TeRM3~ _ 033(0.84 107(2.72) e Excellent thermal stability Ease of paralleling na ates me SHER a UNIT TYPE [TERM.1TERM.2| TERM. TAB POWER MOS FET!TO-220-AB] GATE |DAAIN| SOURCE| DRAIN maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRF622 IRF623 UNITS Drain-Source Voltage Voss 200 150 Voits Drain-Gate Voltage, Ras = 1M VpGrR 200 150 Volts Continuous Drain Current@ To = 25C Ip 4.0 4.0 A Gc = 100C 2.5 2.5 A Pulsed Drain Current lpm 16 16 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ To = 25C Pp 40 40 Watts Derate Above 25C 0.32 0.32 Ww/C Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 3.12 3.12 C/W Thermal Resistance, Junction to Ambient RaJa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 195electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC [SYMBOL | MIN | TYP | MAX UNIT | off characteristics Drain-Source Breakdown Voltage IRF622 BVpss 200 _ _ Voits (Vag = OV, Ip = 250 vA) IRF623 150 _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vgg = OV, To = 25C) 250 HA (Vps = Max Rating, x 0.8, Vag = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vas(tH) 2.0 _ 4.0 Volts (Vos = Vas. Ip = 250 pA) On-State Drain Current \ 4.0 _ _ A (Vgg = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance _ (V@g = 10V, Ip = 2.5A) Rps(oNn) 0.8 1.2 Ohms Forward Transconductance (Vps = 10V, Ip = 2.5A) Ofs 1.2 1.8 mhos dynamic characteristics Input Capacitance Vas = 10V Ciss _ 385 600 pF Output Capacitance Vps = 25V Coss _ 80 300 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 15 80 pF switching characteristics* Turn-on Delay Time Vps = 90V ta(on) _ 15 _ ns Rise Time Ip = 2.5A, Vag = 15V tr _ 10 _ ns Turn-off Delay Time Roen = 509, Reg = 12.50 | taoff _ 30 _ ns Fall Time (Res Equiv.) = 10) tr _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 4 A Pulsed Source Current Is _ _ 16 A Diode Forward Voltage _ 1 4 (Te = 25C, Vas = OV, Is = 4A) Vsp 0 1. Volts Reverse Recovery Time ter _ 270 _ ns (Ig = 5A, dig/dt = 100A/usec, Tc = 125C) Qrr 1.5 uc *Pulse Test: Pulse width < 300 ws, duty cycle = 2% 100 60 OPERA IN THIS AREA MAY BE LIMITED BY Rogigny Ip, DRAIN CURRENT (AMPERES) LE PULSE To=25C IRF623 pe IRF622 1 2 4 6 810 20 40 60 80100 Vos, DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 CONDITIONS: RDg(ON) CONDITIONS: tp = 2.5 A, Vgg= 10V V@g(TH) CONDITIONS: Ip = 250uA, Vg = Veg Roston) AND Vescri) NORMALIZED ~40 0 40 80 Ty, JUNCTION TEMPERATURE (C} TYPICAL NORMALIZED Rygion, AND Vosiru) VS. TEMP. 120 160 196