CMT2N7002
SMALL S
IGNAL MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT2N7002
Characteristic Symbol Min Typ Max Units
Drain-Source Breakdown Voltage
(V
GS = 0 V, ID = 10 μA)
V(BR)DSS 60 V
Drain-Source Leakage Current
(VDS = 60 V, VGS = 0 V)
(VDS = 60 V, VGS = 0 V, TJ = 125℃)
IDSS
1.0
0.5
μA
mA
Gate-Source Leakage Current-Forward (Vgsf = 20 V) IGSSF 100 nA
Gate-Source Leakage Current-Reverse (Vgsf = -20 V) IGSSF -100 nA
Gate Threshold Voltage *
(V
DS = VGS, ID = 250 μA)
VGS(th) 1.0 2.5 V
On-State Drain Current (VDS ≧ 2.0 VDS(on), VGS = 10V) Id(on) 500 mA
Static Drain-Source On-Resistance *
(VGS = 10 V, ID = 0.5A)
(VGS = 10 V, ID = 0.5A, TC = 125℃)
(VGS = 5.0 V, ID = 50mA)
(VGS = 5.0 V, ID = 50mA, TC = 125℃)
RDS(on)
7.5
13.5
7.5
13.5
Ω
Drain-Source On-Voltage *
(VGS = 10 V, ID = 0.5A)
(VGS = 5.0 V, ID = 50mA)
VDS(on)
3.75
0.375
V
Forward Transconductance (VDS ≧ 2.0 VDS(on), ID = 200mA) * gFS 80 mmhos
Input Capacitance Ciss 50 pF
Output Capacitance Coss 25
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz) Crss 5.0
pF
Turn-On Delay Time td(on) 20 ns
Turn-Off Delay Time
(VDD = 25 V, ID = 500 mA,
Vgen = 10 V, RG = 25Ω, RL = 50Ω) * td(off) 40
ns
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V) VSD -1.5
V
Source Current Continuous (Body Diode) IS -115
mA
Source Current Pulsed ISM -800
mA
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
Formosa MS