TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS Copyright (c) 1997, Power Innovations Limited, UK 40 W at 25C Case Temperature 1 A Continuous Collector Current 2 A Peak Collector Current 20 mJ Reverse-Energy Rating DECEMBER 1971 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL TIP47 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) TIP48 TIP49 VCBO 450 500 250 TIP49 VCEO TIP50 Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds 1: 2. 3. 4. 400 TIP50 TIP48 UNIT 350 TIP47 Emitter-base voltage NOTE VALUE 300 350 V V 400 V EBO 5 V IC 1 A ICM 2 A IB 0.6 A Ptot 40 W Ptot 2 W 1/2LIC 2 20 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 1 ms, duty cycle 2%. Derate linearly to 150C case temperature at the rate of 0.32 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25C case temperature PARAMETER V (BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe| TEST CONDITIONS Collector-emitter breakdown voltage IC = 30 mA MIN IB = 0 (see Note 5) TIP47 250 TIP48 300 TIP49 350 TIP50 400 TYP MAX UNIT V VCE = 350 V VBE = 0 TIP47 1 Collector-emitter V CE = 400 V V BE = 0 TIP48 1 cut-off current V CE = 450 V V BE = 0 TIP49 1 V CE = 500 V V BE = 0 TIP50 1 VCE = 150 V IB = 0 TIP47 1 Collector cut-off V CE = 200 V IB = 0 TIP48 1 current V CE = 250 V IB = 0 TIP49 1 V CE = 300 V IB = 0 TIP50 1 VEB = 5V IC = 0 Forward current VCE = 10 V IC = 0.3 A transfer ratio V CE = 10 V IC = 1A IB = 0.2 A IC = 1A (see Notes 5 and 6) 1 V VCE = 10 V IC = 1A (see Notes 5 and 6) 1.5 V VCE = 10 V IC = 0.2 A f = 1 kHz 25 VCE = 10 V IC = 0.2 A f = 2 MHz 5 MAX UNIT Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 1 (see Notes 5 and 6) 30 mA mA mA 150 10 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25C case temperature PARAMETER MIN ton Turn on time IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A toff Turn off time V BE(off) = -5 V RL = 200 (see Figures 1 and 2) Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP 0.2 s 2 s TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 F 120 T V1 100 100 F 47 tp V cc V=CC250 V TUT 15 V1 100 680 F 82 BD136 tp = 20 s Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = toff 90% D dIB 2 A/s dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 40 TCP770AA VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - Typical DC Current Gain 50 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE = 10 V TC = 25C tp = 300 s, duty cycle < 2% 30 20 10 0 0.01 0.1 0*3 TCP770AB IC / IB = 5 TC = 25C tp = 300 s, duty cycle < 2% 0*2 0*1 0 0*01 1 IC - Collector Current - A 0*1 IC - Collector Current - A Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VBE(sat) - Base-Emitter Saturation Voltage - V 1.0 0.9 TCP770AC VCE = 10 V TC = 25C tp = 300 s, duty cycle < 2% 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0*01 0*1 IC - Collector Current - A Figure 5. PRODUCT 4 INFORMATION 1*0 1 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AA 1*0 0.1 tp = 100 s TIP47 TIP48 TIP49 TIP50 tp = 500 s tp = 1 ms DC Operation 0*01 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. PRODUCT INFORMATION 5 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 o 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright (c) 1997, Power Innovations Limited PRODUCT INFORMATION 7