TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
1
DECEMBER 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
●40 W at 25°C Case Temperature
●1 A Continuous Collector Current
●2 A Peak Collector Current
●20 mJ Reverse-Energy RatingB
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base. MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTE 1: This value applies for tp ≤ 1 ms, duty cycle ≤ 2%.
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
RATINGSYMBOLVALUEUNIT
Collector-base voltage (IE = 0)
TIP47
TIP48
TIP49
TIP50
VCBO
350
400
450
500
V
Collector-emitter voltage (IB = 0)
TIP47
TIP48
TIP49
TIP50
VCEO
250
300
350
400
V
Emitter-base voltageVEBO5V
Continuous collector current IC1A
Peak collector current (see Note 1)ICM2A
Continuous base current IB0.6A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)Ptot40W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)Ptot2W
Unclamped inductive load energy (see Note 4)½LIC220mJ
Operating junction temperature rangeTj-65 to +150°C
Storage temperature rangeTstg-65 to +150°C
Lead temperature 3.2 mm from case for 10 secondsTL260°C
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
2
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
V(BR)CEOCollector-emitter
breakdown voltageIC = 30 mA
(see Note 5)IB = 0
TIP47
TIP48
TIP49
TIP50
250
300
350
400
V
ICESCollector-emitter
cut-off current
VCE=350 V
VCE=400 V
VCE=450 V
VCE=500 V
VBE =0
VBE =0
VBE =0
VBE =0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
ICEOCollector cut-off
current
VCE=150 V
VCE= 200 V
VCE=250 V
VCE= 300 V
IB=0
IB=0
IB=0
IB=0
TIP47
TIP48
TIP49
TIP50
1
1
1
1
mA
IEBOEmitter cut-off
currentVEB = 5 VIC=0 1 mA
hFEForward current
transfer ratioVCE = 10 V
VCE = 10 VIC=0.3A
IC= 1A(see Notes 5 and 6)30
10 150
VCE(sat)Collector-emitter
saturation voltageIB = 0.2 AIC= 1A(see Notes 5 and 6)1V
VBEBase-emitter
voltageVCE = 10 VIC= 1A(see Notes 5 and 6)1.5V
hfeSmall signal forward
current transfer ratioVCE = 10 VIC=0.2Af = 1 kHz25
|hfe|Small signal forward
current transfer ratioVCE = 10 VIC=0.2Af = 2 MHz5
resistive-load-switching characteristics at 25°C case temperature
PARAMETERTEST CONDITIONS †MINTYPMAXUNIT
ton Turn on timeIC = 1 A
VBE(off) = -5 VIB(on) = 0.1 A
RL = 200 ΩIB(off) = -0.1 A
(see Figures 1 and 2)0.2µs
toffTurn off time 2 µs
3
DECEMBER 1971 - REVISED MARCH 1997
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
PARAMETER MEASUREMENT INFORMATION
Figure 1. Resistive-Load Switching Test Circuit
Figure 2. Resistive-Load Switching Waveforms
tp
F
µµ
100
V1
680 F
µµ
V1
Vcc = 250 V
+25 V
BD135
47
ΩΩ
100
ΩΩ
120
ΩΩ
15
ΩΩ
82
ΩΩ
100
ΩΩ
BD136 680 F
µµ
TUT
T
tp = 20 µs
Duty cycle = 1%
V1
= 15 V, Source Impedance = 50
Ω
VCC
0%
C
B
90%
10%
A10%
90%
10%
90%
E
F
D
IB
IC
IB(on)
IB(off)
0%
dIB
dt≥ 2 A/µs
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = toff
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
4
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0.01 0.1 1
hFE - Typical DC Current Gain
0
10
20
30
40
50 TCP770AA
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1
VCE(sat) - Collector-Emitter Saturation Voltage - V
0
0·1
0·2
0·3 TCP770AB
IC / IB = 5
TC = 25°C
tp = 300 µs, duty cycle < 2%
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1·0
VBE(sat) - Base-Emitter Saturation Voltage - V
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0 TCP770AC
VCE = 10 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
5
DECEMBER 1971 - REVISED MARCH 1997
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
MAXIMUM SAFE OPERATING REGIONS
Figure 6.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·01
0.1
1·0
10 SAP770AA
tp = 100 µµs
tp = 500 µµs
tp = 1 ms
DC Operation
TIP47
TIP48
TIP49
TIP50
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
6
DECEMBER 1971 - REVISED MARCH 1997
PRODUCT INFORMATION
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2 VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE
7
DECEMBER 1971 - REVISED MARCH 1997
TIP47, TIP48, TIP49, TIP50
NPN SILICON POWER TRANSISTORS
PRODUCT INFORMATION
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
