BAS40 Series Schottky Diode Features * Low turn-on voltage * Fast switching * PN junction guard ring for transient and ESD protection Applications * High speed switching applications SOT-23 * Circuit protecting * Voltage clamping Schematic Diagram and Marking BAS40 BAS40-04 Marking: 43 Marking: 44 BAS40-05 BAS40-06 Marking: 45 Marking: 46 Maximum Ratings (TA = 25C unless otherwise noted) Characteristic Symbol Value Unit 40 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Reverse Voltage VRRM Forward Continuous Current IFM 200 mA Power Dissipation Pd 350 mW Forward Surge Current IFSM 600 mA Thermal Resistance, Junction to Ambient RjA 357 C/W Operating Junction Temperature Range Tj -55 to +125 C Storage Temperature Range TSTG -65 to +150 C VRWM VR 1/3 BAS40 Series Schottky Diode Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V(BR)R 40 - - V IRS= 10A Forward Voltage VF - - mV tP<300s,IF=1.0mA tP<300s,IF=40mA Reverse Leakage Current IR - 20 200 nA tP<300s,VR=30V Junction Capacitance Cj - 4.0 5.0 pF VR=0V,f=1.0MHz Reverse Recovery Time trr - - 5.0 ns IF=IR=10mA to IR=1.0mA,RL=100 Typical Characteristic Curves 380 1000 (TA = 25C unless otherwise noted) 2/3 BAS40 Series Schottky Diode Package Outline Dimensions SOT-23 A SOT-23 E K B J D G Dim Min Max A 2.70 3.10 B 1.10 1.50 C 1.0 Typical D 0.4 Typical E 0.35 0.48 G 1.80 2.00 H 0.02 0.1 J H C K 0.1 Typical 2.20 2.60 All Dimensions in mm Sugguested Soldering Pad 0.95 0.95 2.00 0.90 0.80 www.goodarksemi.com Unit : mm 3/3 Doc.USBAS40xYD1.0