Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-E mitter Break down
Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdow n Voltage IC = 10 µA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V
IBL Base Cutoff Current VCE = 30 V, V EB = 3V 50 nA
ICEX Collector Cutoff Current VCE = 30 V, VEB = 3V 50 nA
OFF CHARACTERISTICS
ON CHARACTERISTICS*
SMALL SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)
Spice Model
fTCurrent Gain - Bandwidth Product IC = 10 mA , VCE = 20 V,
f = 100 MHz 300 MHz
Cobo Output Capacitance VCB = 5.0 V , IE = 0,
f = 1.0 MHz 4.0 pF
Cibo Input Capacitance VEB = 0.5 V, I C = 0,
f = 1.0 MHz 8.0 pF
NF Noise Figure IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7kHz 5.0 dB
tdDelay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns
t
Rise Ti me IC = 10 mA, IB1 = 1.0 mA 35 ns
tsStorage Time VCC = 3.0 V, IC = 10mA 200 ns
tfFall Time IB1 = IB2 = 1.0 mA 50 ns
hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V
IC = 1.0 mA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 50 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
40
70
100
60
30
300
VCE
sat
Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.2
0.3 V
V
VBE
sat
Base-Emitte r Saturation Voltage IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA 0.65 0.85
0.95 V
V
2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
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