TECHNICAL DATA in Common-Emitter Circuit Small-Signal Forward Current-Transfer Ratio at 1 kilocyele with collector-to-emitter volts = 3.5 and collector ma = 0.3)........ 85 Noise Figure (with generator resistance = 1000 ohms and integrated noise bandwidth = 15 kilocycles)...................0- 5 db POWER TRANSISTOR Germanium p-n-p type used in a - wide variety of switching and ampli- ( fier applications in industrial and mili- 2 Ni 0] 4 ' a tary equipment. Maximum ratings: EC) B collector-to-base volts, ~-100; peak collector amperes, 10; transistor dis- sipation (at mounting-flange temperature = 25C), 50 watts; mounting-flange- temperature range (operating), --65 to 100C. Package is similar to JEDEC No. TO-8; outline 26, Outlines Section, except that maximum case height is 0.72 inch. This type is used principally for renewal purposes. TRANSISTOR q's Germanium p-n-p type used in rf and if amplifier circuits; oscillator, f mixer, and converter circuits; and low- 2 Ni 02 3 . i level video-amplifer circuits in indus- trial and military equipment. It is used in the design of rf circuits having high input-circuit efficiency, excellent operating stability, good automatic-gain- control capabilities over a wide range of input-signal levels, and good signal-to- noise ratio. The drift-field construction provides low base resistance and collector- transition capacitance, and improves performance at high frequencies. The center lead is internally connected to the metal case to provide integral shielding which minimizes interlead capacitance and coupling to adjacent circuit components. For curves of typical collector characteristics and for video-amplifier circuit, refer to type 2N384. JEDEC No. TOQ-44 package; outline 16, Outlines Section. MAXIMUM RATINGS COLLECTOR-TO-BASE VOLTAGE (with emitter open). ... 2.0.0... 00 000 cae 40 max volts COLLECTOR-TO-EMITTER VOLTAGE (with base-to-emitter volts = 0.5)..... ~40 max volts EMITTER-TO-BASE VOLTAGE (with collector open) 0.5 max volt COLLECTOR CURRENT... 0.2... 00.05 e eee ee teen eens 10 max ma EMITTER CURRENT. 2... 01. cece ee en eee tte ee tenn een 10 max ma TRANSISTOR DISSIPATION: At case temperatures up to 25C. 0 ec ce ee eee 240 max mw At ambient temperatures up to 25C... cee nee 120 max mw At case or ambient temperatures above 25C... 1... eee ee eee . See curve page 68 TEMPERATURE RANGE: Operating (junction) and storage... 1... kee cee eet eens 65 to 100 C CHARACTERISTICS Collector-to-Base Breakdown Voltage (with collector wa = --50 and emitter current = 0) 80 volts Collector-to-Emitter Reach-Through Voltage (with emitter-to-base volts = 0.5). 80 volts Collector-Cutoff Current (with collector-to-base volts and emitter current = 0)... cece ei eeee rte ener eebentees ~4 Ba 181