SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L LSIC1MO120E0120 1200 V N-channel, Enhancement-mode SiC MOSFET RoHS Pb Product Summary Circuit Diagram TO-247-3L Characteristics Value VDS 1200 V Typical RDS(ON) 120 m ID ( TC 100 C) 18 A Features * O ptimized for highfrequency, high-efficiency applications * E xtremely low gate charge and output capacitance * 1 2 Unit * Body diode * N ormally-off operation at all temperatures * U ltra-low on-resistance * H alogen-free, RoHS compliant and lead-free * L ow gate resistance for high-frequency switching 3 Environmental * Littelfuse "RoHS" logo = RoHS conform Applications RoHS * Littelfuse "HF" logo = Halogen Free * Littelfuse "Pb-free" logo = Pb Pb-free lead plating * H igh-frequency applications * Solar Inverters * S witch Mode Power Supplies * UPS * Motor Drives * H igh Voltage DC/DC Converters * Battery Chargers * Induction Heating (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Maximum Ratings Characteristics Symbol Continuous Drain Current ID Pulsed Drain Current 1 Power Dissipation Operating Junction Temperature Conditions Value VGS = 20 V, TC = 25 C 27 VGS = 20 V, TC = 100 C 18 Unit A ID(pulse) TC = 25 C 54 A PD TC = 25 C, TJ = 150 C 139 W -55 to 150 C TJ VGS,MAX Absolute maximum values -6 to 22 VGS,OP,TR Transient, <1% duty cycle -10 to 25 VGS,OP Recommended DC operating values -5 to 20 Storage Temperature TSTG - -55 to 150 Lead Temperature for Soldering Tsold - 260 C 0.6 Nm 5.3 in-lb Gate-source Voltage Mounting Torque M3 or 6-32 screw MD V C Footnote 1: Pulse width limited by TJ,max Thermal Characteristics Symbol Value Unit Maximum Thermal Resistance, junction-to-case Characteristics Rth,JC,max 0.9 C/W Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 C/W Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Min Typ Max Unit V Static Characteristics Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current V(BR)DSS IDSS IGSS,F IGSS,R Drain-source On-state Resistance RDS(ON) Gate Threshold Voltage VGS,(th) Gate Resistance RG VGS = 0 V, ID = 250 A 1200 - - VDS = 1200 V, VGS = 0 V - 1 100 VDS = 1200 V, VGS = 0 V, TJ = 150 C - 2 - VGS = 22 V, VDS = 0 V - - 100 VGS = -6 V, VDS = 0 V - - 100 ID = 14 A, VGS = 20 V - 120 150 ID = 14 A, VGS = 20 V, TJ = 150 C - 158 - VDS = VGS, ID = 7 mA 1.8 2.8 4.0 VDS = VGS, ID = 7 mA, TJ = 150 C - 1.9 - Resonance method, Drain-Source shorted - 0.85 - A nA m V (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Electrical Characteristics (TJ = 25 C unless otherwise specified) Characteristics Symbol Conditions Turn-on Switching Energy EON Turn-off Switching Energy EOFF Total Per-cycle Switching Energy ETS VDD = 800 V, ID = 14 A, VGS = -5/+20 V, RG,ext = 2 , L = 1.4mH, FWD = LSIC2SD120A10 Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS COSS Stored Energy EOSS Total Gate Charge Qg Gate-source Charge Qgs Gate-drain Charge Qgd Turn-on Delay Time td(on) Rise Time tr Turn-off Delay Time Fall Time td(off) tf VDD = 800 V, VGS = 0 V, f = 1 MHz, VAC = 25 mV VDD = 800 V, ID = 14 A, VGS = -5/+20 V VDD = 800 V, VGS = -5/+20 V, ID = 14 A, RG,ext = 2 , RL = 56 , Timing relative to VDS Value Min Typ Max - 111 - - 68 - - 179 - - 1125 - - 53 - - 8 - - 17 - - 80 - - 20 - - 28 - - 12 - - 7 - - 16 - - 10 - Min Value Typ Max Unit J pF J nC ns Reverse Diode Characteristics Characteristics Diode Forward Voltage Symbol VSD Continuous Diode Forward Current IS Peak Diode Forward Current 1 ISP Conditions IS = 7 A, VGS = 0 V - 3.8 - IS = 7 A, VGS = 0 V, TJ = 150 C - 3.4 - VGS = 0 V, TC = 25 C - - 26 - - 54 Unit V A Footnote 1: Pulse width limited by TJ,max (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Figure 2: Transfer Characteristics ( VDS = 10 V ) 160 60 140 50 120 Drain Current, ID (A) Maximum Power Dissipation (W) Figure 1: Maximum Power Dissipation ( TJ = 150 C ) 100 80 60 40 40 30 20 25 C 10 20 0 150 C -75 -25 25 75 125 0 175 -55 C 0 5 Case Temperature, TC (C) 15 20 Gate-Source Voltage, VGS (V) Figure 3: Output Characteristics ( TJ = 25 C ) Figure 4: O utput Characteristics ( TJ = 150 C ) 50 50 (Pulse Width < 400s) (Pulse Width < 400s) 20V 20V 40 40 18V 30 16V 20 14V Drain Current, ID (A) Drain Current, ID (A) 10 12V 10 16V 14V 30 18V 12V 20 10V 10 10V 0 0 0 2 4 6 8 0 10 2 6 8 10 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 5: Output Characteristics (TJ = -55 C) Figure 6: Reverse Conduction Characteristics ( TJ = 25 C ) 50 Reverse Voltage, VSD (V) (Pulse Width < 400 s) 8 40 6 4 2 0 20V 30 18V 20 10 -5V 0V 5V 10V 20V 15V 0 10 16V 20 14V 30 12V 0 10V 0 2 4 6 40 8 Drain-Source Voltage, VDS (V) 10 Reverse Current, IS (A) Drain Current, ID (A) 4 (Pulse Width < 400s) 50 (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Figure 8: Reverse Conduction Characteristics (TJ = -55 C) Figure 7: Reverse Conduction Characteristics (TJ = 150 C) Reverse Voltage, VSD (V) Reverse Voltage, VSD (V) 8 6 4 2 8 0 6 4 2 0 0 0 10 15V 20 10V 30 5V 0V -5V Reverse Current, IS (A) 20V Reverse Current, IS (A) 5V -5V 0V 10 10V 20V 15V 20 30 40 40 (Pulse Width < 400s) (Pulse Width < 400s) 50 50 Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area (TC = 25 C) 100 0.5 0.3 10-1 Drain Current, ID (A) Transient Thermal Impedance, Zth,JC (Normalized to Rth,JC) 100 0.1 0.05 0.02 10-2 0.01 10 100s 1 1ms DC 0.1 Single Pulse 10-3 10s Single Pulse 0.01 10-6 10-5 10-4 10-3 10-2 10-1 0.1 100 1 100 1000 Drain-Source Voltage, VDS (V) Pulse Width (S) Figure 11: Normalized On-resistance vs. Drain Current Figure 12: Normalized On-resistance 2.5 1.6 Normalized On-resistance, RDS(ON) Normalized On-resistance, RDS(ON) 10 150C 2 -55C 1.5 150C 1 0.5 (VGS = 20V) 0 0 10 20 30 Drain Current, ID (A) 40 50 1.4 1.2 1 0.8 0.6 0.4 0.2 (VGS = 20V, ID = 14A) 0 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature, TJ (C) (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Figure 13: Threshold Voltage Figure 14: Drain-Source Blocking Voltage 1.04 Normalized Blocking Voltage, V(BR)DSS (V) Threshold Voltage, VGS(TH) (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 (ID = 7,A) 0.0 1.03 1.02 1.01 1 0.99 0.98 0.97 (ID = 250A) 0.96 -75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 0 Figure 15: Junction Capacitances 50 75 100 125 150 175 Figure 16: Junction Capacitances 10000 10000 CISS CISS 1000 Capacitance (pF) 1000 100 COSS 10 CRSS COSS 100 CRSS 10 (f = 1MHz) 1 0 200 400 600 800 (f = 1MHz) 1 1000 0 50 Drain Voltage, VDS (V) 100 150 200 Drain Voltage, VDS (V) Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge 25 20 Gate-Source Voltage, VGS (V) Stored Energy, EOSS (J) 25 Junction Temperature, TJ (C) Junction Temperature, TJ (C) Capacitance (pF) -25 20 15 10 5 15 10 5 0 (VDD = 800V, ID = 14A) 0 0 200 400 600 Drain Voltage, VDS (V) 800 1000 -5 0 10 20 30 40 50 60 70 80 90 Gate Charge, Qg (nC) (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Figure 19: Switching Energy vs. Drain Current 600 Switching Energy (J) 450 VDD = 800V RG,ext = 2 VGS = -5/+20V FWD = LSIC2SD120A10 L = 1.4mH TJ = 25C 500 ETS EON 400 300 200 VDD = 800V ID = 14A VGS = -5/+20V FWD = LSIC2SD120A10 L = 1.4mH TJ = 25C 400 Switching Energy (J) 700 Figure 20: Switching Energy vs. Gate Resistance EOFF 350 300 ETS 250 EON 200 150 EOFF 100 100 50 0 0 0 10 20 30 0 40 2 4 6 8 10 12 External Gate Resistance, RG,ext () Drain Current, ID (A) Package Dimensions TO-247-3L A E2/2 E1 P OP 1 D E2 O D1 S Q A2 D2 E Symbol L1 OPTIONAL L b2 (2x) e e A1 Recommended Hole Pattern Layout 3 .9 2.46 R0 5.44 5.44 UNIT: mm c b (3x) b4 Notes: 1. Dimensions are in millimeters 2. Dimension D, E do not include mold flash. Mold flash shall not exceed 0.127 mm per side measured at outer most extreme of plastic body. 3.oP to have a maximum draft angle of 38.1 mm to the top of the part with a maximum hole diameter of 3.912 mm. Millimeters Min Nom Max A 4.80 5.03 5.20 A1 2.25 2.38 2.54 A2 1.85 1.98 2.11 b 0.99 - 1.40 b2 1.65 - 2.39 b4 2.59 - 3.43 c 0.38 0.64 0.89 D 20.80 20.96 21.34 D1 13.50 - - D2 0.51 1.19 1.35 e 5.44 BSC E 15.75 15.90 16.13 E1 13.06 14.02 14.15 E2 4.19 4.32 4.83 L 19.81 20.19 20.57 L1 3.81 4.19 4.45 oP 3.55 3.61 3.66 oP1 7.06 7.19 7.32 Q 5.49 5.61 6.20 S 6.05 6.17 6.30 (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19 SiC MOSFET LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L Part Numbering and Marking System Packing Options Part Number SIC = SiC = Gen1 1 MO = MOSFET = Voltage Rating (1200 V) 120 E = TO-247-3L 0120 = RDS(ON) (120 mOhm) = Year YY WW = Week = Special Code E ZZZZZZ-ZZ = Lot Number SIC1MO120E0120 LF YYWWE ZZZZZZ-ZZ Marking LSIC1MO120E0120 SIC1MO120E0120 Packing Mode M.O.Q Tube (30pcs) 450 20.955~21.045 (532.257~534.543) 0.9010 (22.885) 0.52100.040 (2X) (13.23301.016) (2X) O 0.118~0.120 (2X) O(2.997~3.048)(2X) O0.3150.002 (2X) O(8.0010.051)(2X) 0.2440.02 (6.1980.508) 1. All pin plug holes are considered critical dimension 2. Tolerance is to be 0.010 unless otherwise specified 3. Dimension are in inch (and millimeters). 0.9050.02 (22.9870.508) NOTE: 0.0300.004 (0.7620.102) 0.1180.008 (2.9970.203) 0.8460.02 (21.4880.508) 0.9010 (22.885) 0.51200.040 (13.0051.016) Packing Specification TO-247-3L 0.0630.008 (1.6000.203) Disclaimer Notice - Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. (c)2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/04/19