RECTRON HFM101ER SEMICONDUCTOR THRU TECHNICAL SPECIFICATION HFM108ER SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere FEATURES * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any DO-214AC MECHANICAL DATA 0.067 (1.70) 0.051 (1.29) * Epoxy : Device has UL flammability classification 94V-0 * Weight : 0.057 gram 0.110 (2.79) 0.086 (2.18) 0.180(4.57) 0.160(4.06) 0.012 (0.305) 0.006 (0.152) 0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. 0.008 (0.203) 0.004 (0.102) 0.209 (5.31) 0.185 (4.70) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) RATINGS SYMBOL HFM HFM HFM HFM HFM HFM 101ER 102ER 103ER 104ER 105ER 106ER 50 100 200 600 300 400 Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Volts VRMS 35 70 140 210 280 Maximum DC Blocking Voltage VDC 50 100 200 300 400 Maximum Average Forward Current at TA = 50oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO CJ Reverse Energy ( Ir=1A ) ER Operating and Storage Temperature Range 1000 Volts 420 560 700 Volts 600 800 1000 Volts Amps 30 15 Amps 12 20 TJ, TSTG UNITS 800 1.0 IFSM Typical Junction Capacitance (Note 2) HFM HFM 107ER 108ER pF mJ 0 -65 to + 150 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 1.0A DC SYMBOL VF Maximum Full Load Reverse Current, Full cycle Average TA = 55oC Maximum DC Reverse Current at @TA = 25oC Rated DC Blocking Voltage @TA = 125oC IR Maximum Reverse Recovery Time (Note 1) trr NOTES : 1. Test Conditions: IF=0.5A, I R=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. HFM HFM HFM HFM HFM HFM 101ER 102ER 103ER 104ER 105ER 106ER 1.0 1.3 50 HFM HFM 107ER 108ER 1.7 UNITS Volts 50 uAmps 5.0 100 uAmps uAmps 75 nSec 2002-5 FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr +0.5A (-) 0 -0.25A (NOTE 2) (+) -1.0A 1cm NOTES:1 Rise Time = 7ns max. Input Impedance = SET TIME BASE FOR 10/20 ns/cm 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms. TJ = 100 1.0 TJ = 25 .1 .01 FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS M1 03E R 10 HF 1.0 R~ 01E .1 TJ = 25 .01 Pulse Width = 300uS 1% Duty Cycle .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( M1 TJ = 150 10 0 HF 100 INSTANTANEOUS FORWARD CURRENT, (A) INSTANTANEOUS REVERSE CURRENT, (uA) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS 1.0 ~H FM 10 6E 5E R~ R HF M 10 8E R OSCILLOSCOPE (NOTE 1) 10 1 NONINDUCTIVE M GENERATOR HF 25 Vdc (approx) (-) Single Phase Half Wave 60Hz Resistive or Inductive Load ER PULSE 2.0 04 D.U.T (+) FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE M1 10 NONINDUCTIVE HF 50 NONINDUCTIVE AVERAGE FORWARD CURENT, (A) RATING AND CHARACTERISTIC CURVES ( HFM101ER THRU HFM108ER ) 0 FIG. 6 - TYPICAL JUNCTION CAPACITANCE FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 60 JUNCTION CAPACITANCE, (pF) 70 8.3ms Single Half Sine-Wave (JEDEC Method) 50 40 30 20 10 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) 200 100 60 40 HFM 101 20 10 TJ = 25 6 4 ER~ HFM 105 ER HFM 106 ER ~HF M1 08E R 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) RECTRON 100 ) Mounting Pad Layout 0.094 MAX. (2.38 MAX.) 0.060 MIN. (1.52 MIN.) 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF Dimensions in inches and (millimeters) RECTRON